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    Method of etching polyimides and resulting passivation structures
    36.
    发明公开
    Method of etching polyimides and resulting passivation structures 失效
    消除聚酰胺和结果钝化结构的方法

    公开(公告)号：EP0394638A3

    公开(公告)日：1992-07-15

    申请号：EP90103546.9

    申请日：1990-02-23

    Applicant: International Business Machines Corporation

    Inventor： Kindl, Thomas E. ,  Rickerl, Paul G. ,  Russel, David J.

    IPC: G03F7/40

    CPC classification number: H01L21/31133 ,  H05K3/002 ,  H05K3/108 ,  H05K3/388 ,  H05K3/4092 ,  H05K2201/0154 ,  H05K2201/0166 ,  H05K2203/0793

    Abstract: A method of etching polyimide material having metal­lization patterned thereon in which an epoxy resin system not only provides the etch mask for etching the polyimide but also provides a resulting passivation structure overlying the metallization on the polyimide substrate. The polyimide having a desired metalliza­tion pattern thereon is coated with the epoxy based photoimageable material which has the properties of resisting concentrated KOH etching when the epoxy material is cured and also the property of adhering to the polyimide substrate and the metallized pattern after exposure to the KOH etch to provide a pas­sivation to the metallization. The process includes exposing the layer of photoimageable material to actinic radiation to selectively pattern the material, developing the patterned material to reveal the underlying polyimide to be etched, curing the re­maining material and etching the revealed polyimide material in concentrated KOH to remove the revealed polyimide. The remaining epoxy material is firmly adherent as a passivation layer for the metallization. Preferably the epoxy material consists essentially of from about 10% to about 80% by weight of a polyol resin which is a condensation product of epichloro­hydrin and bisphenol A having a molecular weight of between about 40,000 to 130,000, and between about 20% and 90% by weight of an epoxidized octafunctional bisphenol A formaldehyde novolak resin, having a molecular weight of between 4,000 to 10,000 and about 0.1 to about 15 parts by weight of resin of a cationic photoinitiator capable of initiating polymerization of the epoxidized resin system upon exposure to actinic radiation. The resin may optionally contain up to about 50% by weight of epoxidized di-glycidal ether of tetrabromo bisphenol A having a molecular weight of between about 600 and 2,500, if flame retardancy is required.

    Process for making a two-layer film carrier
    38.
    发明公开
    Process for making a two-layer film carrier 失效
    制作两层薄膜载体的方法

    公开(公告)号：EP0415659A3

    公开(公告)日：1991-09-18

    申请号：EP90309293.0

    申请日：1990-08-24

    Applicant: SUMITOMO METAL MINING COMPANY LIMITED

    Inventor： Chonan, Takeshi ,  Kudo, Yuko ,  Hirota, Yoshihiro

    IPC: H01L21/48 ,  H01L23/498

    CPC classification number: H01L23/49572 ,  H01L21/4846 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/0346 ,  H05K3/002 ,  H05K3/108 ,  H05K3/4092 ,  H05K2201/0154 ,  H05K2201/0166 ,  H01L2924/00

    Abstract: A two-layer film carrier for TAB is made from a substrate (1) prepared by forming a copper layer (2) on a polyimide film by additive plating. A photoresist layer (3) is formed on the copper layer, and another photoresist layer (3) on the polyimide film. Both of the photoresist layers are simultaneously exposed to light through a mask applied to each of them to define a desired pattern. The exposed portions of the photoresist layer on the copper layer are subjected to development and postbaking, whereby selected portions of the copper layer are exposed. The exposed portions of the copper layer are additive plated with copper, whereby leads (4) are formed. The exposed portions of the photoresist layer on the polyimide film are subjected to development and postbaking, whereby selected portions of the polyimide film are exposed (5, 6, 7). The remaining portions of the photoresist layer are removed from the copper layer and the underlying copper layer is etched. The exposed portions of the polyimide film are etched, and the remaining portions of the photoresist layer are removed from the polyimide film.

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