摘要:
A surface mount package for encapsulating an electronic device is provided. The package has a ceramic frame containing a plurality of apertures. Copper-tungsten composite metallic components are bonded to the ceramic frame and individually extend across each of the apertures. The metallic components may include a flange for bonding and a pedestal extending into each aperture.
摘要:
L'invention concerne un module préadapté pour diode hyperfréquence à forte dissipation thermique. Ce module comporte une pastille de diode (9) polarisée par une connexion (15), et montée à l'intérieur d'un boîtier constitué par une embase métallisée, un anneau de quartz (11) et un capot métallique (17). L'embase du boîtier comprend deux diamants rapportés et métallisés (6 et 7) dont l'un (6) est de dimensions très supérieures à celles de l'autre diamant central (7), ces deux diamants permettant d'évacuer au maximum la chaleur dégagée par la diode (9) et permettant au capot d'assurer, par ses dimensions et celles du diamant (7) et de l'anneau (11 une bonne transformation radiale d'impédance. Application notamment aux diodes à avalanche travaillant dans la bande 94 GHz.
摘要:
A semiconductor package structure is provided. The semiconductor package structure includes a substrate having a first surface and a second surface opposite thereto. The substrate includes a wiring structure. The semiconductor package structure also includes a first semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The semiconductor package structure further includes a second semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The first semiconductor die and the second semiconductor die are separated by a molding material. In addition, the semiconductor package structure includes a first hole and a second hole formed on the second surface of the substrate.
摘要:
A semiconductor element package includes a base body, a frame member, and a terminal member. The frame member is provided on a main surface of the base body. A notch is formed on the base body side of this frame member. The notch is a gap between the one main surface of the base body and the frame member. The terminal member is provided so as to cover the notch as the gap. The terminal member includes a first dielectric layer, a plurality of signal wiring conductors and a plurality of coplanar ground conductor layers that are provided on one surface of the first dielectric layer, and a second dielectric layer. The first dielectric layer has a hole provided open in a region of the one surface between a first wiring conductor and a second wiring conductor.
摘要:
A power module or the like is provided in which lower inductance and miniaturization are achieved. The power module includes: main body units (11 to 13), cooling units (21 to 24) which cool the main body units (11 to 13), busbars (51, 52) connected to power terminals (1i, 1j) of the main body units (11 to 13), a casing (W) in which at least contact parts with the busbars (51, 52) are insulative, and a metal member (30) which supports the casing (W). The metal member (30) tightly contacts the casing (W), thereby forming a box with one side opened. At least the main body units (11 to 13) and the busbars (51, 52) are arranged inside the box. An insulating sealant is provided to fill the inside of the box.
摘要:
An electronic device comprises a multi-layer printed circuit board. On the printed circuit board there is installed electronic components and a metal frame that encloses at least part of the electronic components. A layer of bonded anisotropic conductive film is disposed on the frame and the electronic components. The layer connects thermally a sheet of metal foil on the frame and on the electronic components. The sheet of metal foil covers the electronic component and the metal frame.
摘要:
Sought is to provide a semiconductor module that makes it possible to easily perform visual observation of soldering, and to perform a reflow soldering process in a state where external terminals are attached to a case. A semiconductor module includes a rectangular base plate; a substrate which is placed on the base plate and on which a circuit including a semiconductor chip and so forth is formed; a rectangular parallelepiped case made of resin that is attached to the base plate and houses the substrate within; and a plurality of external terminals lower ends of which are fixed to the substrate with upper ends thereof being exposed on a top face of the case. The case is provided with a first case opening portion and a second case opening portion that are respectively formed by cutting off a front face and a rear face of the case from an upper edge thereof along a longitudinal direction thereof; and the top face of the case between the first case opening portion and the second case opening portion includes an external terminal holding portion to hold the plurality of external terminals along the longitudinal direction with the upper ends thereof being exposed. A sealing material is injected from the first case opening portion and the second case opening portion onto a top face of the substrate, and thereby the semiconductor module is sealed.
摘要:
Integrating a semiconductor component with a substrate through a low loss interconnection formed through adaptive patterning includes forming a cavity in the substrate, placing the semiconductor component therein, filling a gap between the semiconductor component and substrate with a fill of same or similar dielectric constant as that of the substrate and adaptively patterning a low loss interconnection on the fill and extending between the contacts of the semiconductor component and the electrical traces on the substrate. The contacts and leads are located and adjoined using an adaptive patterning technique that places and forms a low loss radio frequency transmission line that compensates for any misalignment between the semiconductor component contacts and the substrate leads.
摘要:
Provided are a semiconductor device and a semiconductor device manufacturing method which can ensure the reliable contact between a plurality of semiconductor modules and a cooler and facilitate an attachment operation. The semiconductor device includes: semiconductor modules (2A to 2D) in which a circuit board having at least one or more semiconductor chips mounted thereon is sealed with a mold resin material and an attachment hole (27) is formed; main terminal plates (3A to 3C) that individually connect individual connection terminals of the plurality of semiconductor modules which are arranged in parallel; and a module storage case (4) into which the plurality of the semiconductor modules connected by the main terminal plates are inserted integrally with the main terminal plates from an opening portion (51) and which holds the plurality of semiconductor modules such that the position of the semiconductor modules can be adjusted during attachment and includes attachment insertion holes (59) facing the attachment holes of the semiconductor modules.
摘要:
Ce procédé pour la fabrication d'un ensemble microélectronique comprenant au moins un premier et un second composants reportés l'un sur l'autre et entre lesquels est réalisée au moins une cavité hermétique noyée dans un matériau de remplissage, consiste : à définir ladite cavité au moyen d'une paroi latérale (14) constituant un cadre fermé s'étendant autour d'une zone déterminée du premier composant à l'exception d'une ouverture faisant fonction d'évent (18) ; à ménager au sein du cadre fermé et en regard de l'évent un obstacle (16) apte à constituer en coopération avec la paroi latérale une canalisation ou conduite de dérivation (22) du matériau de remplissage ; à hybrider face contre face les premier et second composants, une face du second composant reposant sur l'extrémité ou bord supérieur de la paroi latérale formée sur le premier composant de manière à former ladite au moins une cavité ; à injecter le matériau de remplissage sous forme liquide entre les deux composants hybridés de manière à noyer ladite au moins une cavité et à rendre celle-ci hermétique par obstruction de l'évent (18) en suite de la solidification dudit matériau de remplissage. La longueur de la canalisation ou conduite de dérivation (22) est supérieure à la distance parcourue par le matériau de remplissage entre le moment de la présentation de ce dernier au niveau de l'évent (18) et le moment de la solidification du matériau de remplissage.