公开(公告)号：EP0641150A4

公开(公告)日：1995-05-10

申请号：EP93910327

申请日：1993-05-12

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： C23C14/22 ,  C23C14/34 ,  C23C14/56 ,  C23C16/44 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/02 ,  H05H1/46 ,  C23C14/00 ,  C23C16/00 ,  H01L21/205

CPC分类号： C23C14/345 ,  C23C14/34 ,  C23C14/564 ,  C23C16/4405 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32862

摘要： A process apparatus whose chamber can be cleaned in a short time not exposed to air at all. At least two electrodes of first and second electrodes (107, 105) are provided in a vacuum vessel (108). A high-frequency power (112) having a first frequency is supplied to the first electrode (107), and a high-frequency power (101) having a second frequency different from the first frequency is supplied to the second electrode (105). A mechanism for supporting a wafer (106) is disposed on the second electrode (105), and a gas introduced into the vacuum vessel (108) is turned into a plasma by the powers. In this apparatus, a mechanism, by which the impedance between the second electrode (107) and a ground can be made enough larger than that between the first electrode and the ground, if necessary, is provided.

摘要翻译： 一种工艺装置，其腔室可以在短时间内清洁而不会暴露在空气中。 第一和第二电极（107,105）的至少两个电极设置在真空容器（108）中。 具有第一频率的高频功率（112）被提供给第一电极（107），具有不同于第一频率的第二频率的高频功率（101）被提供给第二电极（105）。 在第二电极（105）上设置用于支撑晶片（106）的机构，通过这些电力将导入真空容器（108）的气体变成等离子体。 在该装置中，提供了一种机构，如果需要，可以使第二电极（107）和地之间的阻抗足够大于第一电极和地之间的阻抗。

公开(公告)号：EP0614216A4

公开(公告)日：1994-11-30

申请号：EP92924004

申请日：1992-11-24

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C30B33/00 ,  H01L21/00 ,  H01L21/316 ,  H01L27/092

CPC分类号： H01L21/67115 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/455 ,  C30B33/005 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L27/0925

摘要： A heat treatment apparatus which can perform active gas sintering, etc. for forming a reliable oxide film on the surface of a substrate in a furnace tube. In the apparatus, provided are at least a furnace tube (1) which has a closable opening part (11) for loading in and out an object (5) to be treated and has gas introducing inlets (12) for introducing gases inside, a heating means (4) for heating the inside of the furnace tube (1), gas introducing pipes (2) communicating with the gas introducing inlets (12) so as to pass gases through them, and a heating means (9) for heating the gas introducing pipes (2). At least the inner surfaces of the gas introducing pipes (2) are made of nickel or a material containing nickel.

公开(公告)号：EP1592045A4

公开(公告)日：2010-09-08

申请号：EP04706361

申请日：2004-01-29

申请人： SHINETSU HANDOTAI KK ,  OHMI TADAHIRO

发明人： YAMANAKA HIDEKI ,  DEMIZU KIYOSHI ,  OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  SUGAWA SHIGETOSHI

IPC分类号： C30B29/06 ,  H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/78

CPC分类号： H01L21/28167 ,  H01L21/02008 ,  H01L21/02027 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02658 ,  H01L29/045

摘要： The present invention has been made in order to manufacture a silicon semiconductor substrate used for a semiconductor integrated circuit device, higher in carrier mobility, especially in electron mobility, which is a carrier of an n-type FET, on a {100} plane as a main surface, and provides a silicon semiconductor substrate and a method for manufacturing the same, wherein the conventional RCA cleaning is employed without the use of special cleaning and the surface of the substrate is planarized at an atomic level to thereby decrease the surface roughness thereof without the use of the radical oxidation. The present invention provides a silicon semiconductor substrate comprising: a {110} plane or a plane inclined from a {110} plane as a main surface of the substrate; and steps arranged at an atomic level along a orientation on the main surface.

摘要翻译： 本发明是为了制造用于半导体集成电路器件的硅半导体衬底，在{100}面作为载流子迁移率，尤其是作为n型FET的载流子的电子迁移率中，作为 并且提供一种硅半导体基板及其制造方法，其中采用常规的RCA清洗而不使用特殊的清洁，并且基板的表面在原子水平上被平坦化，从而降低其表面粗糙度 而不使用自由基氧化。 本发明提供了一种硅半导体衬底，包括：{110}面或从{110}面倾斜作为衬底的主表面的平面; 以及沿着主表面沿<110>方向布置在原子级的台阶。

公开(公告)号：EP1221576A4

公开(公告)日：2007-05-23

申请号：EP00957088

申请日：2000-09-11

申请人： HITACHI PLANT ENG & CONSTR CO ,  KUMAGAI GUMI CO LTD ,  TAISEI CORP ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SHIRAI YASUYUKI ,  HIRAYAMA MASAKI ,  HANAOKA HIDEO ,  HONMA TAKESHI ,  SUZUKI HIROKAZU ,  YAMAZAKI YOSHIO ,  OHKUBO YOSHINORI

IPC分类号： F24F1/00 ,  F24F3/14 ,  F24F13/22 ,  F25D21/14

CPC分类号： F24F13/222 ,  F24F11/41 ,  F25D21/14

摘要： The present invention has an object to comprise an apparatus for high efficiency gas temperature and humidity adjustment and an adjustment method allowing to elevate the heat exchange efficiency of a cooling coil, reduce the cooling water quantity, lower also the pipe arrangement diameter and water supply pump power, making possible to cut the initial cost and running cost of the air-conditioning system. The apparatus for high efficiency gas temperature and humidity adjustment is characterized by that means for removing condensate water deposited on the cooling coil.

公开(公告)号：EP1486714A4

公开(公告)日：2007-05-09

申请号：EP02705285

申请日：2002-03-18

申请人： FUJIKIN KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  YAMAJI MICHIO ,  NOJIMA SHINYA ,  KATSUMI YUKITO ,  SHINOHARA TSUTOMU

IPC分类号： F16L19/03 ,  F16J15/02 ,  F16J15/06 ,  F16J15/10 ,  F16J15/12 ,  F16L17/00 ,  F16L19/00 ,  F16L19/02 ,  F16L25/00 ,  F16L27/08

CPC分类号： F16J15/02 ,  F16J15/062 ,  F16J15/104 ,  F16L19/00 ,  F16L19/0212 ,  F16L19/0218 ,  F16L25/0018 ,  F16L27/082 ,  F16L27/0828 ,  Y10S277/925 ,  Y10S285/917

摘要： At the abutting end faces of coupling members (1, 2), annular recesses (3, 4) having annular protrusions (5, 6) on the bottom face are provided while surrounding fluid channels (1a, 2a). A gasket (10) comprises a seal part (11) interposed between the protrusions (5, 6) of the coupling members (1, 2) while having an outside diameter smaller than the diameter of the annular recesses (3, 4), and a guide part (12) disposed on the outside of the seal part (11) while having an outside diameter being fitted in the annular recesses (3, 4). When the coupling members (1, 2) are fastened properly, the end faces thereof abut each other. An annular groove (14) is made in the outer circumference of the seal part (11) and a snap ring (13) fitted in the annular groove (14) couples the seal part (11) and the guide part (12).

公开(公告)号：EP0750340A4

公开(公告)日：2006-03-08

申请号：EP96900183

申请日：1996-01-08

申请人： TAIYO NIPPON SANSO CORP ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  ISHIHARA YOSHIO

IPC分类号： C23C14/32 ,  H01L21/00 ,  B01D53/04 ,  B65G49/07 ,  C23C14/34 ,  C23C14/46 ,  C23C16/44 ,  C23C16/455 ,  F24F7/06 ,  F25J3/04 ,  F25J3/08 ,  H01L21/02 ,  H01L21/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01L21/67739 ,  F25J3/044 ,  F25J3/04563 ,  F25J3/04836 ,  F25J3/04951 ,  F25J3/04963 ,  F25J3/08 ,  F25J2210/42 ,  F25J2215/42 ,  F25J2215/44 ,  F25J2245/42 ,  F25J2250/42 ,  F25J2290/62 ,  H01L21/67023 ,  Y10T29/41

摘要： A nitrogen gas supply system for efficiently supplying nitrogen gas in an amount and of purity sufficient and necessary to a wafer processing device (31) for subjecting a wafer to a predetermined processing and a nitrogen gas tunnel type wafer transfer device (32) for transferring wafers via a gate valve (37). This nitrogen gas supply system comprises a route (38) for supplying high-purity nitrogen gas obtained by a cryogenic separator (33) which is a nitrogen gas generating device to the wafer processing device, (31), a circulating route (40) in which an outlet portion (32a) and an inlet portion (32b) of the wafer transfer device (32) are caused to communicate with each other via refining equipment (39) and a replenishing route (44) for replenishing nitrogen gas from a liquefied nitrogen storage tank (36) to the circulating route (40).

摘要翻译： 一种氮气供给系统，用于向晶片处理装置（31）有效地供给足够量和纯度的氮气，以对晶片进行预定的处理;以及氮气隧道型晶片传送装置（32），用于传送晶片 经由闸阀（37）。 该氮气供给系统具备：向晶片处理装置供给由氮气产生装置即低温分离器（33）得到的高纯度氮气的路径（38），（31）循环路径（40）， 使晶片传送装置32的出口部分32a和入口部分32b通过精炼设备39和补充液氮中的氮气的补充路径44相互连通， 储罐（36）到循环路线（40）。

公开(公告)号：EP1347506A4

公开(公告)日：2005-04-20

申请号：EP01272543

申请日：2001-12-27

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SUGAWA S ,  HIRAYAMA M ,  SHIRAI Y

IPC分类号： H01L21/28 ,  H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/76 ,  H01L21/8234 ,  H01L21/8239 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/00 ,  H01L27/088 ,  H01L27/105 ,  H01L27/115 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/30604 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78645

摘要： A method for manufacturing a semiconductor device including a transistor and capacitors formed over a silicon substrate, wherein hydrogen present at least on a part of the surface of the silicon substrate, hydrogen is removed by exposing the surface to a plasma produced from a first inert gas, a plasma is produced from a mixture gas of a second inert gas and one or more kinds of gas molecules, and thereby to form a silicon compound layer containing at least part of the elements constituting the gas molecules is formed on the surface of the silicon substrate.

摘要翻译： 一种用于制造半导体器件的方法，所述半导体器件包括形成在硅衬底上的晶体管和电容器，其中氢至少存在于所述硅衬底的一部分表面上，通过将所述表面暴露于由第一惰性气体产生的等离子体来除去氢 从第二惰性气体和一种或多种气体分子的混合气体产生等离子体，从而形成包含构成气体分子的元素的至少一部分的硅化合物层形成在硅的表面上 基质。

公开(公告)号：EP0889515A4

公开(公告)日：2004-10-20

申请号：EP97912528

申请日：1997-11-21

申请人： NIPPON OXYGEN CO LTD ,  TODA MASAYUKI ,  OHMI TADAHIRO

发明人： TODA MASAYUKI ,  OHMI TADAHIRO ,  ISHIHARA YOSHIO

IPC分类号： B65G49/00 ,  B65G49/07 ,  H01L21/677 ,  H01L21/68 ,  H01L21/00

CPC分类号： H01L21/67126 ,  H01L21/67724 ,  H01L21/67736

摘要： When a thin sheet-like substrate S is conveyed between conveying chambers (2) equipped with a processing apparatus (1) and kept in an inert gas atmosphere by using a conveying robot (30) equipped with an accommodation chamber (3) capable of accommodating the thin sheet-like substrate (S) in an inert gas atmosphere, a connection chamber (4) is interposed between the accommodation chamber (3) and the conveying chamber (2) when the thin sheet-like substrate (S) is transferred between the accommodation chamber (3) of the conveying robot (30) and the conveying chamber (2) on the side of the processing apparatus (1), and is vacuumized, and then an inert gas is introduced. Thereafter, gate valves (GV1 and GV2) of the accommodation chamber (3) and the conveying chamber (2) are opened and the thin sheet-like substrate (S) is carried in and out.

公开(公告)号：EP0751301A3

公开(公告)日：1998-07-15

申请号：EP96110514

申请日：1996-06-28

申请人： OHMI TADAHIRO ,  FUJIKIN KK

发明人： OHMI TADAHIRO ,  HIRAO KEIJI ,  YAMAJI MICHIO ,  ITOI SHIGERU ,  SHINOHARA TSUTOMU ,  IKEDA NOBUKAZU ,  KOJIMA TETSUYA

IPC分类号： G05D7/06 ,  F15B13/00 ,  F15B13/08 ,  G05D16/20

CPC分类号： F15B13/0832 ,  F15B13/0817 ,  F15B13/0871 ,  Y10T137/5109 ,  Y10T137/5283 ,  Y10T137/87885

摘要： A fluid control apparatus (1) comprises a mass flow controller (2), two on-off valves (3,4) disposed at the inlet side of the controller and three on-off valves (5,6,7) disposed at the outlet side of the controller. At the inlet side, a main fluid on-off valve (4) is positioned on a purge fluid on-off valve (3), and at the outlet side, a vent on-off valve (6) is positioned on a vacuum suction on-off valve (5), with a main passage on-off valve (7) further positioned on the vent on-off valve (6).

公开(公告)号：EP0657934A4

公开(公告)日：1997-09-03

申请号：EP93919578

申请日：1993-08-26

申请人： SHIBATA TADASHI ,  OHMI TADAHIRO

发明人： SHIBATA TADASHI ,  OHMI TADAHIRO

IPC分类号： H01L21/82 ,  H01L21/822 ,  H01L27/04 ,  H01L27/10 ,  H01L27/118 ,  H03K19/173 ,  H01L29/78

CPC分类号： H03K19/1736 ,  H01L27/11803

摘要： A semiconductor integrated circuit adaptable to any logic circuits using a common mask with the exception of a mask of metallic wirings so as to drastically improve performance of custom LSIs. The semiconductor integrated circuit comprises a logic circuit having a plurality of input terminals and at least one output terminal. The logic circuit includes a plurality of circuit blocks of the same circuit construction. Each of the circuit blocks has at least two stages of inverter formed by MOS semiconductor devices and at least one layer of a wiring pattern having a different pattern. The output signal of each block is defined by a predetermined function of an input signal.

摘要翻译： 一种半导体集成电路，适用于使用除了金属布线掩模之外的共用掩模的任何逻辑电路，从而大大提高定制LSI的性能。 半导体集成电路包括具有多个输入端和至少一个输出端的逻辑电路。 逻辑电路包括具有相同电路结构的多个电路块。 每个电路块具有由MOS半导体器件形成的至少两级的反相器和至少一层具有不同图案的布线图案。 每个块的输出信号由输入信号的预定功能定义。