公开(公告)号：EP1388167A2

公开(公告)日：2004-02-11

申请号：EP02707747.8

申请日：2002-02-08

申请人： MOTOROLA, INC.

发明人： MUI, Kok, Wai ,  HARUN, Fuaida, Bte ,  TAN, Lan, Chu ,  MOHD NOR, Mohd, Faizairi, Bin

IPC分类号： H01L21/60

CPC分类号： H01L24/05 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/32134 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85011 ,  H01L2224/85013 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  Y10S438/905 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/03

摘要： A method of preparing a semiconductor wafer having a integrated circuits formed on it that have pads formed of copper includes the steps of removing oxide from the copper pads and then the vacuum packing the wafer in a shock-proof container. The oxide may be removed from the copper pads in a number of ways. A first way includes cleaning the wafer in an alkaline solution, performing acid neutralization on the cleaned wafer, and then drying the wafer. A second way includes cleaning the wafer with an acid solution, rinsing the acid cleaned wafer with water, applying an anti-oxidant activator to the surface of the copper pads, rinsing the wafer with water after the application of the anti-oxidant activator, and then drying the water rinsed wafer. Yet a third way includes plasma cleaning the copper pads using a combination of about 5-10% Hydrogen and about 90-95% Argon and then sputtering a very thin layer of aluminum on a surface of the copper pads. The layer of aluminum has a thickness of about 1-5 nanometers.

摘要翻译： 制备其上形成有集成电路的半导体晶片的方法，其具有由铜形成的焊盘，包括从铜焊盘去除氧化物，然后将晶片真空包装在防震容器中的步骤。 可以以多种方式从铜焊盘去除氧化物。 第一种方法包括在碱性溶液中清洗晶片，在清洁的晶片上进行酸中和，然后干燥晶片。 第二种方法包括用酸溶液清洗晶片，用水冲洗酸洗的晶片，将抗氧化剂活化剂施加到铜垫的表面，在施用抗氧化剂活化剂之后用水冲洗晶片;以及 然后干燥水冲洗的晶片。 第三种方法包括使用约5-10％氢气和约90-95％氩气的组合对铜焊盘进行等离子体清洗，然后在铜焊盘的表面上溅射非常薄的铝层。 铝层的厚度约为1-5纳米。

公开(公告)号：EP1160864A3

公开(公告)日：2004-01-14

申请号：EP01110760.4

申请日：2001-05-03

申请人： NEC Electronics Corporation

发明人： Nagaya, Kazuhisa, c/o NEC Kyushu, Ltd. ,  Arikawa, Naoshi, c/o NEC Kyushu, Ltd.

IPC分类号： H01L23/485

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device having a bonding pad, includes an alumina layer formed on a surface of the bonding pad before bonding a bonding wire to the bonding pad to prevent the surface of the bonding pad from degenerating during storage while awaiting the bonding step. A method of manufacturing a semiconductor device with such a bonding pad includes the steps of: forming an inter-layer insulating film, an aluminum layer, and a passivation film successively on a semiconductor substrate; forming a photosensitive resin film on the passivation film; opening a bonding pad by exposing a part of the aluminum layer with photolithographic etching using a fluorine gas etching; and baking the device in a water vapor atmosphere at a predetermined temperature and baking time to form the alumina layer.

摘要翻译： 具有接合焊盘的半导体器件包括在将接合线接合到接合焊盘之前形成在接合焊盘的表面上的氧化铝层，以在等待接合步骤期间防止接合焊盘的表面退化。 利用这种接合焊盘制造半导体器件的方法包括以下步骤：在半导体衬底上依次形成层间绝缘膜，铝层和钝化膜; 在钝化膜上形成感光树脂膜; 通过使用氟气蚀刻的光刻蚀刻曝光铝层的一部分来打开焊盘; 并在预定温度和烘烤时间的水蒸气气氛中烘烤该装置以形成氧化铝层。

公开(公告)号：EP1353365A2

公开(公告)日：2003-10-15

申请号：EP03392004.2

申请日：2003-03-27

申请人： Chartered Semiconductor Manufacturing Pte Ltd.

发明人： Sudijono, John Leonard ,  Aliyu, Yakub ,  Zhou, Mei Sheng ,  Chooi, Simon ,  Gupta, Subhash ,  Roy, Sudipto Ranendra ,  Ho, Paul Kwok Keung ,  Xu, Yi

IPC分类号： H01L21/60 ,  H01L21/311 ,  H01L23/485

CPC分类号： H01L24/05 ,  C23G5/00 ,  H01L21/02046 ,  H01L21/32136 ,  H01L23/4824 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05073 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/4846 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/49111 ,  H01L2224/85013 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/05042 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00015

摘要： A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.

摘要翻译： 引线接合到金属接合焊盘，包括以下步骤的方法。 提供了一种具有在一腔室中键合焊盘暴露的金属的半导体结构。 键合焊盘具有上表面。 甲氢等离子体由等离子体源在腔室中产生的。 金属结合焊盘预清洗，并用氢等离子体钝化以除去形成在金属焊盘上表面的任何金属氧化物。 然后，将导线键合到所述金属钝化接合垫。

公开(公告)号：EP1296379A2

公开(公告)日：2003-03-26

申请号：EP02017076.7

申请日：2002-07-29

申请人： Sanyo Electric Co., Ltd.

发明人： Asano, Tetsuro ,  Onoda, Katsuaki ,  Nakajima, Yoshibumi

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/66143 ,  H01L24/05 ,  H01L29/872 ,  H01L2224/04042 ,  H01L2224/45144 ,  H01L2224/4847 ,  H01L2924/14 ,  H01L2924/00

摘要： A Schottky barrier diode has a Schottky contact region (11a) formed in an n epitaxial layer (2,3) disposed on a GaAs substrate (1) and an ohmic electrode (8) surrounding the Schottky contact region (11a). The ohmic electrode (8) is disposed directly on an impurity-implanted region (7) formed on the substrate (1). An insulating region (6) is formed through the n epitaxial layer (2,3) so that an anode bonding pad (11b) is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.

摘要翻译： 肖特基势垒二极管具有形成在设置在GaAs衬底（1）上的n外延层（2,3）中的肖特基接触区（11a）和围绕肖特基接触区（11a）的欧姆电极（8）。 欧姆电极（8）直接设置在形成于基板（1）上的杂质注入区（7）上。 通过n外延层（2,3）形成绝缘区域（6），使得阳极接合焊盘（11b）以阴极电压与器件的其它元件隔离。 该器件的平面结构不包括传统的聚酰亚胺层，因此具有比常规器件更好的高频特性。

公开(公告)号：EP0947281B1

公开(公告)日：2002-03-27

申请号：EP98124759.6

申请日：1998-12-28

申请人： F & K Delvotec Bondtechnik GmbH ,  HAHN-SCHICKARD-GESELLSCHAFT FÜR ANGEWANDTE FORSCHUNG E.V.

发明人： Farassat, Farhad, Dr. ,  Alavi, Mani Dr. ,  Burger, Volker ,  Faist, Joachim ,  Pollak, Klaus ,  Schmidt, Bertram, Dr.

IPC分类号： B23K26/00 ,  B23K20/02

CPC分类号： H01L24/85 ,  B23K20/004 ,  B23K26/034 ,  B23K26/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45572 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85214 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/20755 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/48824 ,  H01L2924/00

公开(公告)号：EP1187190A1

公开(公告)日：2002-03-13

申请号：EP00119756.5

申请日：2000-09-11

申请人： Marconi Communications GmbH

发明人： Junger, Klaus ,  Konrath, Willibald ,  Kern, Stefan

IPC分类号： H01L21/66 ,  H01L21/607

CPC分类号： H01L24/85 ,  B23K20/005 ,  B23K2201/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2224/05552 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4847 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/1423 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/45099

摘要： On a circuit-board intended for constant-wire-length (CWL) bonding, one or more special "test" pairs of bonding pads are provided along with, in each case, a series of markings adjacent the pads. In use, the board is populated with CWL bonds (this includes the normal circuit-related RF bond-pads as well as the test bond-pads) and the test bonds are distorted so that the bond-wires in question lie aligned against the markings. The alignment position relative to the markings indicates whether the bond-wires for the whole board are of correct or incorrect length. Measurement may be either absolute, in which case the markings are associated with a scale indication, or relative, in which case one of the markings will usually be visibly distinguished from the rest in some way. Depending on the length determination, the bond-forming device (e.g. ball and wedge) is adjusted so as to reduce any difference between the indicated length and the desired length when the next board is populated or when the next multi-board production run takes place.

摘要翻译： 在用于恒定线（CWL）接合的电路板上，提供一个或多个特殊的“测试”对接合焊盘，并且在每种情况下都提供与焊盘相邻的一系列标记。 在使用中，电路板上装有CWL键（这包括正常的电路相关射频键合焊盘以及测试接合焊盘），并且测试键被扭曲，使得所讨论的接合线与标记对齐 。 相对于标记的对准位置表示整个板的接合线是否正确或长度不正确。 测量可以是绝对的，在这种情况下，标记与比例指示或相对关联，在这种情况下，其中一个标记通常以某种方式与其余部分明显区别。 根据长度确定，调整粘合形成装置（例如球和楔），以便在下一个板填充时或当下一个多板生产运行发生时减小指示长度和所需长度之间的任何差异 。

公开(公告)号：EP1130645A2

公开(公告)日：2001-09-05

申请号：EP01104798.2

申请日：2001-02-27

申请人： Omron Corporation ,  Powered Co., Ltd.

发明人： Ikuhashi, Ryoichi, Powered Co., Ltd.

IPC分类号： H01L23/482

CPC分类号： H01L24/73 ,  H01L23/051 ,  H01L23/3735 ,  H01L23/3736 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L29/747 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/4847 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/92247 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/13033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/0133 ,  H01L2924/01049 ,  H01L2924/00 ,  H01L2924/00015

摘要： A TRIAC which is one species of chip-type semiconductors includes an element body (10) made of silicon, electrodes (11, 12) provided on one face of the element body (10), a molybdenum plate (30) provided on the electrode (12) by an alloy plate (1) made of aluminum and silicon, a molybdenum plate (31) provided on the other face of the element body (10) by a similar alloy plate (2), and nickel layers (3, 4) provided on connection faces of the molybdenum plates (30, 31) to outer electrode plates (40, 41), so that the electrode (12) and molybdenum plate (30) are firmly connected without conventional high-temperature solder which includes a great amount of lead, and that the alloy plate (1) never melt even when newly developed low-temperature institute is employed, and that the operation of the molybdenum plates (30, 31) is sufficiently realized.

摘要翻译： 作为芯片型半导体的一种的TRIAC包括由硅构成的元件体（10），设置在元件主体（10）的一个面上的电极（11,12），设置在电极上的钼板（30） （12）由铝和硅制成的合金板（1），通过类似的合金板（2）在元件主体（10）的另一个表面上设置的钼板（31）和镍层（3,4） ）设置在钼板（30,31）的连接面上的外电极板（40,41）上，使得电极（12）和钼板（30）牢固地连接，而没有常规的高温焊料，其包括大的 铅的量，即使采用新开发的低温机组，合金板（1）也不会熔融，并且充分实现了钼板（30,31）的操作。

公开(公告)号：EP1120834A3

公开(公告)日：2001-08-22

申请号：EP01108780.6

申请日：1995-02-09

申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

发明人： Takahashi, Hideki, Mitsubishi Denki K.K. ,  Nishihara, Hidenori, Mitsubishi Denki K.K. ,  Harada, Masana, Mitsubishi Denki K.K. ,  Minato, Tadaharu, Mitsubishi Denki K.K.

IPC分类号： H01L29/45 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L21/331 ,  H01L25/07

CPC分类号： H01L29/7813 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0696 ,  H01L29/456 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7815 ,  H01L2224/0603 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/49111 ,  H01L2224/49431 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01088 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An insulated gate semiconductor device comprises a semiconductor base body having an upper main surface and a lower main surface, the semiconductor base body comprises a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, and a third semiconductor layer of the first conductivity type selectively formed in an upper surface portion of the second semiconductor layer, said semiconductor base body has a plurality of tenches arranged substantially in a stripe form along said upper main surface and formed from said upper main surface to said first semiconductor layer, said trench has a gate insulating film formed covering its inner wall and a gate electrode buried in said trench with the gate insulating film interposed therebetween, said second semiconductor layer and said third semiconductor layer are selectively exposed in said upper main surface interposed between adjacent said trenches, said insulated gate semiconductor device further comprises a first main electrode electrically connected to both of said second and third semiconductor layers on said upper main surface and insulated from said gate electrode, a seond main electrode electrically connected to said lower main surface, and a conductive layer having platinum silicide and interposed between said first main electrode and said upper main surface, and said first main electrode and said second and third semiconductor layers are electrically connected through the conductive layer.

摘要翻译： 绝缘栅半导体器件包括具有上主表面和下主表面的半导体基体，半导体基体包括第一导电类型的第一半导体层，设置在第一半导体上的第二导电类型的第二半导体层 以及选择性地形成在所述第二半导体层的上表面部分中的第一导电类型的第三半导体层，所述半导体基体具有多个沿所述上主表面基本上以条形形式排列并由所述上部 所述第二半导体层和所述第三半导体层在所述第一半导体层的主表面与所述第一半导体层之间具有覆盖其内壁的栅极绝缘膜和掩埋在所述沟槽中的栅极绝缘膜，所述第二半导体层和所述第三半导体层选择性地暴露在所述 上主表面介于相邻的所述沟槽之间 所述绝缘栅半导体器件还包括第一主电极和第二主电极，所述第一主电极在所述上主表面上电连接到所述第二和第三半导体层并且与所述栅电极绝缘，所述绝缘栅电极电连接到所述下主表面， 在所述第一主电极和所述上主表面之间插入具有硅化铂的导电层，并且所述第一主电极和所述第二和第三半导体层通过所述导电层电连接。

公开(公告)号：EP1006576A1

公开(公告)日：2000-06-07

申请号：EP99309158.6

申请日：1999-11-17

申请人： SHARP KABUSHIKI KAISHA

发明人： Ono, Atsushi ,  Chikawa, Yasunori

IPC分类号： H01L23/485

CPC分类号： H01L24/48 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05556 ,  H01L2224/05644 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/85201 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/15787 ,  H01L2224/45099 ,  H01L2924/00

摘要： An interconnection or active element (3) is formed on a substrate (1), and an electrode pad (5) is formed on the interconnection or active element (3) with an interlayer insulating film (4) therebetween. A projected electrode (7) is formed on the surface of the electrode pad (5) for protecting the interconnection or active element (3) during bonding to an external terminal.

摘要翻译： 在衬底（1）上形成互连或有源元件（3），并且通过其间的层间绝缘膜（4）在互连或有源元件（3）上形成电极焊盘（5）。 在电极焊盘（5）的表面上形成凸起电极（7），用于在结合到外部端子期间保护互连或有源元件（3）。

公开(公告)号：EP0947281A3

公开(公告)日：2000-02-09

申请号：EP98124759.6

申请日：1998-12-28

申请人： F & K Delvotec Bondtechnik GmbH ,  HAHN-SCHICKARD-GESELLSCHAFT FÜR ANGEWANDTE FORSCHUNG E.V.

发明人： Farassat, Farhad, Dr. ,  Alavi, Mani Dr. ,  Burger, Volker ,  Faist, Joachim ,  Pollak, Klaus ,  Schmidt, Bertram, Dr.

IPC分类号： B23K26/00 ,  B23K20/02

CPC分类号： H01L24/85 ,  B23K20/004 ,  B23K26/034 ,  B23K26/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45572 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85214 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/20755 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/48824 ,  H01L2924/00

摘要： Bei einer Vorrichtung zum Thermokompressionsbonden mit einem gegen eine Bondstelle verfahrbaren Kontaktierwerkzeug (Wedge 10) und einem diesem zugeordneten, mit einer Laserstrahlquelle (23) gekoppelten sowie auf einen unterhalb des Wedge (10) zwischen diesem und der Bondstelle (14) angeordneten Bonddraht-Abschnitt gerichteten Lichtwellenleiter (19) ist erfindungsgemäß vorgesehen, daß der Lichtwellenleiter (19) durch den Wedge (10) hindurch bis nahe an den sich unterhalb des Wedge (10) befindlichen Bonddraht-Abschnitt (Meßpunkt 26) herangeführt ist, so daß im wesentlichen nur dieser Abschnitt bei Einkoppelung von Laserenergie auf eine zum Thermokompressionsbonden ausreichende Temperatur erwärmbar ist.