公开(公告)号：EP3255659A4

公开(公告)日：2018-04-11

申请号：EP16761657

申请日：2016-03-04

Applicant: MITSUBISHI HEAVY IND LTD

Inventor： KATO MASAHIRO ,  HARADA SHOTA ,  ISAYAMA TAKESHI ,  FUJIEDA MITSUTERU

IPC: H01L21/60 ,  B23K20/00 ,  H01L23/485

CPC classification number: H01L24/742 ,  B23K20/00 ,  B23K20/004 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/745 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/11 ,  H01L2224/11312 ,  H01L2224/1134 ,  H01L2224/1184 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13144 ,  H01L2224/141 ,  H01L2224/16238 ,  H01L2224/742 ,  H01L2224/745 ,  H01L2224/75251 ,  H01L2224/75745 ,  H01L2224/7592 ,  H01L2224/81047 ,  H01L2224/81048 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81203 ,  H01L2224/81345 ,  H01L2224/81801 ,  H01L2224/81908 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: This bonding method of a first member and a second member comprises: a step for forming a first wire bonding bump (12) on a first electrode (14) that is arranged on the first member; a step for forming a second wire bonding bump (22) on a second electrode 24 that is arranged on the second member; a step for forming a flat bump surface (221) by flattening a front end portion of the second wire bonding bump; and a compression bonding step for compression-bonding a front end portion (120) of the first wire bonding bump and the flat bump surface (221)with each other.

公开(公告)号：EP2961558B1

公开(公告)日：2016-11-23

申请号：EP14700638.1

申请日：2014-01-15

Applicant: Bayerische Motoren Werke Aktiengesellschaft

Inventor： GAUBATZ, Karl-Heinz ,  LOPEZ DE ARROYABE, Jose

IPC: B23K20/00 ,  H01M2/20 ,  H01M10/42 ,  H01M10/48 ,  B60L11/18 ,  B60L1/02 ,  B60L3/00 ,  H01L23/00 ,  B23K101/38 ,  H01L23/367

CPC classification number: H01M2/206 ,  B23K20/004 ,  B23K20/005 ,  B23K2201/38 ,  B60L1/02 ,  B60L3/0046 ,  B60L11/1864 ,  B60L11/1875 ,  B60L11/1879 ,  B60L2240/545 ,  B60L2270/145 ,  H01L23/3677 ,  H01L24/45 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/49 ,  H01L2224/78 ,  H01L2224/78301 ,  H01L2924/181 ,  H01M2/24 ,  H01M10/425 ,  H01M10/48 ,  H01M10/482 ,  H01M10/486 ,  H01M2220/20 ,  Y02T10/7005 ,  Y02T10/7061 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP2728613A1

公开(公告)日：2014-05-07

申请号：EP12191259.6

申请日：2012-11-05

Applicant: Smartrac IP B.V.

Inventor： Michalk, Manfred, Dr. ,  Oehring, Martina

IPC: H01L23/00 ,  B23K20/00 ,  B23K31/12

CPC classification number: B23K20/004 ,  B23K31/125 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/78313 ,  H01L2224/78621 ,  H01L2224/789 ,  H01L2224/859 ,  H01L2924/00014 ,  H01L2224/45099

Abstract: Die Erfindung betrifft ein Verfahren zur Prüfung einer mittels eines Bondwerkzeugs (11, 31) hergestellten Drahtbondverbindung (40) zwischen einem Bonddraht (16) und einer Kontaktfläche (13) eines Substrats (14), wobei der Bonddraht während oder unmittelbar nachfolgend der Herstellung der Drahtbondverbindung mit einer an einer Drahtführungseinrichtung (17, 34) angeordneten oder mit einer zusammen mit der Drahtführungsbewegung der Drahtführungseinrichtung bewegten Drahtklemme (19) gehalten wird, wobei der Bonddraht während der Drahtführungsbewegung mit definierter Schließkraft F in der Drahtklemme gehalten wird, wobei die Größe der Schließkraft F so gewählt wird, dass bei Erreichen einer definierten Zugkraft Z im Bonddraht und Fortsetzung der Drahtführungsbewegung zwischen Klemmflächen (36) der Drahtklemme und einer Drahtoberfläche (37) des Bonddrahts ein Wechsel von Haftreibung zu Gleitreibung erfolgt und der Bonddraht durch die Drahtklemme gleitet.

Abstract translation: 该方法包括在制造引线接合连接期间或之后紧接着在线引导装置上布置接合线（15），或者通过使导线装置的线引导件与线夹一起移动来夹紧接合线。 在导线器运动期间，接合线被线夹中的限定的夹紧力夹紧。 选择夹紧力的大小，使得在接合线中达到特定的拉力时，接合线滑过线夹。 该方法包括在生产导线接合连接期间或之后紧接着在线引导装置上布置接合线（15），或者通过将导线装置的导线器与线夹一起移动来夹紧接合线。 在导线器运动期间，接合线被线夹中的限定的夹紧力夹紧。 选择夹紧力的大小，使得在接合线中达到特定的拉力时，接合线滑动通过线夹，并且线引导件在线夹的夹紧表面和线夹的表面之间的连续移动 接合线从静摩擦变为动摩擦。 线夹沿导线路径从接合线和第一接触表面之间的第一引线接合连接连续移动到接合线和第二接触表面之间的第二引线接合连接。 线夹的移动以恒定的速度进行。 在线夹和接合线之间的滑动摩擦形成之后，夹紧力减小，使得拉力通过线夹和线引导件的移动沿着接合线的线引导路径滑动。 当发生接合线中的静摩擦与动摩擦的变化时，随机测量拉力。 在确定拉力公差水平期间发生夹紧力的相应变化。

公开(公告)号：EP2384254A2

公开(公告)日：2011-11-09

申请号：EP09831484.2

申请日：2009-12-08

Applicant: Werthschützky, Roland

Inventor： MEISS, Thorsten ,  ROSSNER, Tim

IPC: B23K20/00 ,  H01R43/02 ,  H01R43/28 ,  H02G1/14 ,  H01L21/60

CPC classification number: B23K20/004 ,  B23K2201/42 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4556 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/48091 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/78301 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: The invention makes it possible for electrical wires (100) to be used for the contacting of components preferably on a micro scale (104). Growing metallic microdepositions (102) on cut surfaces of microcables (100) has the effect of creating a contact region which make it easier for a contact promoter that allows ultrasonic bonding to be provided in a metered amount and applied, has a defined size of the electrically conductive area and allows the contacting of very stably insulated wires (100). The method can be favourably used for multiple repeats and for series.

Abstract translation: 本发明允许使用电线优选微部件的接触。 通过在微电缆的切口表面上生长的金属微沉积，产生一个接触区域，这简化的接触辅助的给药和应用程序并允许超声波结合，其包括限定的导电区域的大小，并允许非常稳定绝缘电线的接触。 此方法在拼板方式和串联中的应用是便宜的。

公开(公告)号：EP2308632A1

公开(公告)日：2011-04-13

申请号：EP10008336.9

申请日：2010-08-10

Applicant: Linde Aktiengesellschaft

Inventor： Laumen, Christoph ,  Hiew, Pang Ling

IPC: B23K20/00 ,  B23K35/38 ,  C01B3/02 ,  C01B3/50 ,  C01B21/02 ,  C01B21/04 ,  H01L21/00 ,  H01L21/60

CPC classification number: B23K20/004 ,  B23K35/38 ,  B23K2201/42 ,  C01B3/042 ,  C01B3/047 ,  C01B3/24 ,  C01B3/34 ,  H01L21/67138 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/78 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  Y02E60/364 ,  H01L2924/01001 ,  H01L2924/00

Abstract: The present invention relates to a device for wire bonding comprising a guidance for a bond wire and a melt inducing device for melting the surface of a definite region of the bond wire surface, whereby the bond wire guidance is adapted to guide the definite region of the bond wire into a bonding area (1) and connect it to at least one bond pad, whereby the bonding area (1) comprises a process gas inlet (3), wherein the process gas inlet (3) is connected to an on-site gas generator (5) which generates the process gas. In addition, the present invention relates to a method of wire bonding comprising the steps of: connecting a definite region of a guided bond wire to a bond pad, whereby the surface of the definite region is previously melted and the whole process takes place within a bonding area (1), which contains a process gas, which is led into the bonding area prior or during the bonding process, wherein at least a part of the process gas is generated by an on-site gas generator (5).

Abstract translation: 导线接合装置技术领域本发明涉及一种用于引线接合的装置，其包括用于接合线的引导和用于熔化接合线表面的确定区域的表面的熔体引导装置，由此，接合线引导适于引导接合线的确定区域 将接合线连接到接合区域（1）并将其连接到至少一个接合焊盘，由此接合区域（1）包括工艺气体入口（3），其中工艺气体入口（3）连接到现场 气体发生器（5），其产生处理气体。 另外，本发明涉及一种引线接合方法，包括以下步骤：将引导接合线的确定区域连接到接合焊盘，由此预定区域的熔融表面，并且整个过程发生在 接合区域（1），其包含处理气体，其在接合过程之前或期间被引入接合区域，其中至少一部分工艺气体由现场气体发生器（5）产生。

公开(公告)号：EP2097202B1

公开(公告)日：2011-02-02

申请号：EP07822113.2

申请日：2007-10-31

Applicant: International Business Machines Corporation

Inventor： DAUBENSPECK, Timothy Harrison ,  SAUTER, Wolfgang ,  GAMBINO, Jeffrey Peter ,  MUZZY, Christopher David

IPC: B23K1/20 ,  B23K20/24 ,  H01L25/065

CPC classification number: B23K1/20 ,  B23K1/0016 ,  B23K20/004 ,  B23K20/24 ,  B23K2201/40 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/80 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05548 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/85011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/05599

Abstract: Methods of forming wire and solder bond structures are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond; forming a protective layer over the wire bond metal region only; forming a silicon nitride layer over a silicon oxide layer over the wire bond metal region and the solder bond metal region; forming the solder bond to the solder bond metal region while maintaining the wire bond metal region covered; exposing the wire bond metal region including removing the protective layer; and forming the wire bond to the wire bond metal region. Wire bond and solder bond structures can be made accessible on a single multi-part wafer (MPW) wafer or on a single chip, if necessary.

公开(公告)号：EP1872387A4

公开(公告)日：2010-08-25

申请号：EP06739005

申请日：2006-03-20

Applicant: MICRON TECHNOLOGY INC

Inventor： HEMBREE DAVID R

IPC: H01L23/49

CPC classification number: H01L25/0657 ,  B23K20/004 ,  B23K20/005 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48471 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/8121 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/85043 ,  H01L2224/85045 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2224/9202 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/20751 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3025 ,  H05K3/4046 ,  H05K2201/10287 ,  H05K2203/049 ,  Y10T29/49117 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49162 ,  Y10T29/49169 ,  Y10T29/53213 ,  H01L2924/20752 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the steps of: threading a wire through the via, forming a contact on the wire on the back side, forming a bonded contact on the wire on the circuit side, and then severing the wire from the bonded contact. The through wire interconnect includes the wire in the via, the contact on the back side and the bonded contact on the circuit side. The contact on the back side, and the bonded contact on the circuit side, permit multiple components to be stacked with electrical connections between adjacent components. A system for performing the method includes the substrate with the via, and a wire bonder having a bonding capillary configured to thread the wire through the via, and form the contact and the bonded contact. The semiconductor component can be used to form chip scale components, wafer scale components, stacked components, or interconnect components for electrically engaging or testing other semiconductor components.

Abstract translation: 用于通过导线互连制造半导体部件的方法包括提供具有电路侧，背面和贯通孔的基板的步骤。 该方法还包括以下步骤：将导线穿过通孔，在背面的导线上形成接触，在电路侧的导线上形成接合接触，然后将线从接合接触件断开。 通线互连包括通孔中的导线，背侧的触点和电路侧的接合触点。 背面的触点和电路侧的接合触点允许多个部件与相邻部件之间的电连接层叠。 用于执行该方法的系统包括具有通孔的基板和具有接合毛细管的引线接合器，所述接合毛细管被配置为使导线穿过通孔，并形成接触和接合接触。 半导体部件可用于形成用于电接合或测试其它半导体部件的芯片尺寸部件，晶片尺寸部件，堆叠部件或互连部件。

公开(公告)号：EP2189235A1

公开(公告)日：2010-05-26

申请号：EP09014522.8

申请日：2009-11-20

Applicant: ASM Assembly Automation Ltd.

Inventor： Cheng, Chi Wah ,  Mak, Tim Wai, Tony ,  Ng, Hon Kam, Boris

IPC: B23K20/00 ,  B23K20/10 ,  H01L21/00 ,  H01L21/60

CPC classification number: B23K20/004 ,  B23K20/106 ,  B23K2201/42 ,  H01L21/67138 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/78313 ,  H01L2224/7855 ,  H01L2224/78822 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A bonding apparatus (10) for bonding a length of wire comprises a first module (14) which is drivable along a linear axis towards and away from a bonding point and a second module (16) slidably mounted to the first module (14). A wire cutter (36) is mounted to the first module (14) and a bonding tool (32) is mounted to the second module (16). A coupling mechanism is operative to lock the second module (16) in fixed relative position to the first module (14), and to unlock the second module (16) from its fixed relative position to the first module (14) so that the second module (16) is slidable relative to the first module (14) in directions parallel to the linear axis.

Abstract translation: 对于接合线的长度的接合装置（10）包括第一模块（14），所有这些是沿着线性轴线朝向和从接合点和第二模块（16）可滑动地安装到所述第一模块（14）远离驱动。 电线切割器（36）被安装到所述第一模块（14）和一个接合工具（32）被安装到所述第二模块（16）。 的连接机构可操作以在固定的相对位置的第二模块（16）锁定到所述第一模块（14），并从它的固定的相对位置的第二模块（16）解锁所述第一模块（14）象在第二 模块（16）是可相对滑动，以在方向上的第一模块（14）平行于所述线性轴。

公开(公告)号：EP2097202A1

公开(公告)日：2009-09-09

申请号：EP07822113.2

申请日：2007-10-31

Applicant: International Business Machines Corporation

Inventor： DAUBENSPECK, Timothy Harrison ,  SAUTER, Wolfgang ,  GAMBINO, Jeffrey Peter ,  MUZZY, Christopher David

IPC: B23K1/20 ,  B23K20/24 ,  H01L25/065

CPC classification number: B23K1/20 ,  B23K1/0016 ,  B23K20/004 ,  B23K20/24 ,  B23K2201/40 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/80 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05548 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/85011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/05599

Abstract: Methods of forming wire and solder bond structures are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond; forming a protective layer over the wire bond metal region only; forming a silicon nitride layer over a silicon oxide layer over the wire bond metal region and the solder bond metal region; forming the solder bond to the solder bond metal region while maintaining the wire bond metal region covered; exposing the wire bond metal region including removing the protective layer; and forming the wire bond to the wire bond metal region. Wire bond and solder bond structures can be made accessible on a single multi-part wafer (MPW) wafer or on a single chip, if necessary.

Abstract translation: 公开了形成导线和焊接结构的方法。 在一个实施例中，一种方法包括提供包括用于引线键合的引线键合金属区域和用于焊料键合的焊料键合金属区域的结构; 仅在丝焊金属区域上形成保护层; 在所述引线键合金属区域和所述焊料键合金属区域之上的氧化硅层上方形成氮化硅层; 在保持焊线金属区域覆盖的同时形成焊料结合到焊料结合金属区域; 暴露所述丝焊金属区域，包括去除所述保护层; 以及形成到丝焊金属区域的丝焊。 如果需要，可以在单个多部分晶圆（MPW）晶圆或单个芯片上实现引线键合和焊接键合结构。

公开(公告)号：EP1098356B1

公开(公告)日：2006-02-08

申请号：EP00811018.1

申请日：2000-11-01

Applicant: Unaxis International Trading Ltd

Inventor： Thürlemann, Silvan

IPC: H01L21/00 ,  B23K20/10 ,  B23K20/00

CPC classification number: H01L24/78 ,  B23K20/004 ,  H01L2224/78301 ,  H01L2224/78822 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01039 ,  H01L2924/01082 ,  H01L2924/19042 ,  H01L2224/48 ,  H01L2224/45099