摘要:
Provided is a circuit substrate having a high TCT reliability and having a high degree of freedom in circuit design. The circuit substrate includes: a ceramic substrate; a copper circuit board which is provided on at least either one of a first surface and a second surface of the ceramic substrate and which has a thickness T (mm) of 0.7 mm or more, an angle ¸ of 85° or more to 95° or less of an interior angle in a cross section, and a semiconductor element mounting portion of 25 mm 2 or more provided in a surface; and a bonding layer bonding the ceramic substrate and the copper circuit board. The bonding layer has a protruding portion protruding outside the copper circuit board, provided in a manner to creep up along a side surface of the copper circuit board, and having a protruding amount W1 of 0.1 mm or more to 1.0 mm or less and a creeping-up amount W2 of 0.05T (mm) or more to 0.6T (mm) or less.
摘要:
In a ceramic circuit board 1 prepared by integrally joining a circuit layer 4 composed of a clad member including a circuit plate 2 made of an Al plate and an Al-Si brazing material layer 3 to a ceramic substrate 6, a surface of the clad member adjacent to the Al-Si brazing material layer 3 is joined to the ceramic substrate 6 with an Al alloy film 5 therebetween, the Al alloy film 5 having a thickness of less than 1 µm and being provided on the surface of the ceramic substrate 6. According to this structure, a ceramic circuit board in which the generation of voids in the joint interface can be effectively suppressed, the joint strength of the metal member serving as the circuit layer can be increased, and the heat resistance cycle characteristics can be drastically improved, and a method for producing the same can be provided.
摘要:
A getter material which comprises a green compact from a mixture of a Ba-Al alloy powder and a Ni powder, characterized in that when it is heated under vacuum or in an inert gas, the above green compact initiates an exothermic reaction at a temperature in the range of 750 to 900°C. The use of the above getter material allows, since the temperature of the initiation of an exothermic reaction of the green compact is specified to the range of 750 to 900°C, the appropriate control of the evaporation amount of a getter material to a proper level and with stability and the reduction of the time from the start of heating to the initiation of evaporation of the getter component, which results in providing a getter material and an evaporable getter device exhibiting excellent response. Further, the above evaporable getter device is free from the deformation or melting of a metal container for holding the getter material, and can shorten the time for the heating and evaporation of the getter material and also the time required for the attainment of a prescribed vacuum degree of an electron tube, which also results in providing an evaporable getter device exhibiting excellent response.