公开(公告)号：EP3061739A4

公开(公告)日：2017-05-10

申请号：EP14856390

申请日：2014-10-21

申请人： TOSHIBA KK ,  TOSHIBA MATERIALS CO LTD

发明人： NAKAYAMA NORITAKA ,  AOKI KATSUYUKI ,  SANO TAKASHI

IPC分类号： C04B35/584 ,  B32B18/00 ,  C01B21/068 ,  C04B35/587 ,  C04B35/593 ,  C04B35/626 ,  C04B35/632 ,  C04B35/634 ,  C04B35/638 ,  H01L23/15 ,  H01L23/373 ,  H01L23/498 ,  H05K1/02 ,  H05K1/03

CPC分类号： C01B21/068 ,  B32B18/00 ,  C01P2006/32 ,  C04B35/584 ,  C04B35/587 ,  C04B35/593 ,  C04B35/6263 ,  C04B35/6264 ,  C04B35/63 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/638 ,  C04B35/64 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/383 ,  C04B2235/3873 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/661 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/85 ,  C04B2235/95 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/368 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/3735 ,  H01L23/49838 ,  H01L23/49877 ,  H01L23/49894 ,  H01L2924/0002 ,  H05K1/0201 ,  H05K1/0306 ,  H01L2924/00

摘要： The invention is characterized in that, in a silicon nitride substrate comprising a grain boundary phase with silicon nitride crystal particles and having a heat conductivity of 50W/m·K or greater, the sectional structure of the silicon nitride substrate has a ratio (T2/T1) of 0.01 to 0.30 between the thickness T1 of the silicon nitride substrate and the total length T2 of the grain boundary phase in the thickness direction, and a variation in the dielectric strength of 15% or less from the mean value, as measured by the four terminal method, in which electrodes are brought into contact with the front and the back of the substrate. In addition, a dielectric strength mean value of 15 kv/mm or greater is desirable. According to this constitution, the silicon nitride substrate having a small dielectric strength variation, and the silicon nitride circuit substrate using the same, are obtained.

摘要翻译： 本发明的特征在于，在由氮化硅结晶粒子构成的晶界相，热导率为50W / m·K以上的氮化硅基板中，氮化硅基板的截面结构的比例（T2 / T1）在氮化硅基板的厚度T1和厚度方向上的晶界相的总长度T2之间为0.01〜0.30，且介电强度相对于平均值的偏差为15％以下 四端子方法，其中电极与基板的前部和后部接触。 另外，电介质强度平均值为15kv / mm或更大是理想的。 根据该构成，可以得到介电强度变化小的氮化硅基板及使用其的氮化硅电路基板。

公开(公告)号：EP2796576A4

公开(公告)日：2015-10-14

申请号：EP12860308

申请日：2012-12-20

申请人： TOSHIBA KK ,  TOSHIBA MATERIALS CO LTD

发明人： YAMAMOTO SHINICHI ,  NAKANO KAYO ,  HORIE HIROMICHI ,  SANO TAKASHI ,  MINAMI YOSHIKO ,  YAMAGUCHI SATOSHI

IPC分类号： C22C1/04 ,  B22F3/10 ,  B22F3/24 ,  C22C27/04

CPC分类号： C22C27/04 ,  B22F3/1007 ,  C22C1/045 ,  C22C43/00 ,  C22F1/18 ,  H01J23/05

摘要： The purpose of the present invention is to obtain a tungsten alloy having emission, characteristic equal to or greater than a thorium-containing tungsten alloy, without using thorium, which is a radioactive substance; and to provide a discharge lamp, transmitting tube as magnetron that use said tungsten alloy. The present invention includes, in the tungsten alloy, an Hf component containing HfC in a range of 0.1 wt% to 3 wt% in terms of HfC.

公开(公告)号：EP0661916A4

公开(公告)日：1996-01-10

申请号：EP93914961

申请日：1993-07-06

申请人： TOSHIBA KK

发明人： FUJIMORI YOSHINORI ,  MOMMA JUN YOKOHAMAKAMIHOSHIKIT ,  SASAKI TOMIYA ,  IWASAKI HIDEO ,  SAKAMOTO TOSHIYA TOSHIBA-HIYOS ,  ENDO HIROSHI ,  HISANO KATSUMI ,  SORI NAOYUKI ,  SHIMOTORI KAZUMI ,  YAGI NORIAKI ,  SHIZU HIROMI ,  SANO TAKASHI

IPC分类号： F28F13/00 ,  H01L23/367 ,  H01L23/373 ,  H05K7/20

CPC分类号： H01L24/31 ,  F28F13/00 ,  F28F2013/006 ,  H01L23/3677 ,  H01L23/3733 ,  H01L2224/13311 ,  H01L2224/13313 ,  H01L2224/29111 ,  H01L2224/29499 ,  H01L2224/83101 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/157 ,  H01L2924/19041 ,  Y10S428/902 ,  Y10S428/913 ,  Y10T428/24802 ,  Y10T428/249987 ,  Y10T428/249991 ,  Y10T428/254 ,  Y10T428/2915 ,  Y10T428/2933 ,  Y10T428/31786 ,  H01L2924/01083 ,  H01L2924/01048 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/13111 ,  H01L2924/00014

摘要： A heat dissipating sheet excelling in heat dissipating characteristic (thermal conductivity) in the thickness direction, adhesion to the part to be cooled, and electrical insulating quality. In a heat dissipating sheet (1) wherein a plurality of insulators (3) having high thermal conductivities are dispersed in a matrix-like insulator (2), each insulator (3) is oriented upright or inclinedly with respect to the thickness direction of the heat dissipating sheet (1) so that at least one edge of each insulator is exposed from the surface of the matrix-like insulator (2). Also, the ratio of the sum of all the cross-sectional areas of the insulators (3) to the area of the surface of the heat dissipating sheet (1) is preferably more than 1 %.

摘要翻译： 散热片在厚度方向上的散热特性（导热性）优异，对待冷却部件的粘附性和电绝缘性能优异。 在散热片（1）中，其中具有高导热性的多个绝缘体（3）分散在矩阵状绝缘体（2）中，每个绝缘体（3）相对于所述绝缘体的厚度方向垂直或倾斜 散热片（1），使得每个绝缘体的至少一个边缘从矩阵状绝缘体（2）的表面露出。 此外，绝缘体（3）的全部截面积的总和与散热片（1）的表面的面积的比率优选大于1％。