摘要:
The present invention was held in order to resolve problems on above-mentioned conventional wire bumping material. This invention has the following purposes; (1) approximating Au-Ag alloy bumping balls to bond Al pads to ideal sphere shape (2) increasing assurance of Au-Ag alloy bump bonding to Al pads (3) shortening tail length of Au-Ag alloy bump (4) improving anti-Au consumption into solder (5) decreasing contamination of capillary tip by bump wire and hole around tip Means for resolution Au-Ag alloy for wire bumping comprising wherein Au, which purity is more than 99.99 mass %, comprising Au matrix and a particle of additive elements, consisting of 1 to 40 mass % Ag, which purity is more than 99.99 mass %.
摘要:
[Issues to be solved] To provide Au alloy wire for ball bonding, which is superior wire strength, and also is superior at formability of molten ball and roundness of compressed ball, moreover is superior at stitch bondability; is available for high density wiring of semiconductor divices. [Solution means] Au alloy wire for ball bonding comprising: 15 - 50 wt ppm Mg, 10 - 30 wt ppm Ca, 5 - 20 wt ppm Eu, 5 - 20 wt ppm Y, 5 - 20 wt ppm La and residual Au is more than 99.998 wt % purity, moreover, purity of more than 99.98 wt % Au, mass of additive Ca is less than the value of total amount of additive Eu and additive La, and mass of additive Y is less than the value of total amount of additive Ca and additive Eu, and mass of 20 - 40 wt ppm Mg.
摘要:
There is provided a gold alloy wire for a bonding wire having high bonding reliability, high roundness of a compression ball, high straightness, and high resin flowability resistance. The gold alloy wire for a bonding wire contains one kind or two kinds of Pt and Pd of 5000 ppm to 2% by mass in total, Ir: 1 to 200 ppm, Ca: 20 to 200 ppm, Eu: 10 to 200 ppm, Be: 0.1 to 30 ppm, if necessary, and La: 10 to 200 ppm, if necessary. At least two kinds of Ca, Eu, Be, and La are in a range of 50 to 250 ppm in total.
摘要:
[Issues to be solved] Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved. [Solution means] Au alloy bonding wires comprising: 5 - 100 wt ppm Mg, 5 - 20 wt ppm In, 5 - 20 wt ppm Al, 5 - 20 wt ppm Yb, and Au residual is more than 99.995 wt % purity, and adding 5 - 20 wt ppm Ca, and for these alloys adding at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr to the alloy, and/or, more over, adding 0.01 - 1.2 wt % Pd to these alloys. Bonding wire, which contains these trace additive elements .do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.
摘要:
[Issues to be solved] Providing enhanced bonding reliability of Au alloy bonding wire with low electrical resistivity to Al electrode of semiconductor device, and its application of semiconductor device is bonded with Al electrode pad by the same wire. [Solution means] Au alloy bonding wire comprising: 0.02 - 0.3 mass % Ag, total amount of 10 - 200 mass ppm at least one element of Ge and/or Si, and/or total amount of 10 - 200 mass ppm at least one element of Al and/or Cu, with residual of Au. Moreover, Al and/or Al alloy pad bonded with the above Au alloy bonding wire.
摘要:
To provide a covered Cu wire for ball bonding which can be avoid inconvenience oxidation of core material of Cu and/or Cu alloy on ball forming after pulling and cutting away. A covered Cu wire comprising: core material of Cu-P alloy, and intermediate layer of Pd or Pt on the core material and surface layer of Au on the intermediate layer.
摘要:
There is provided a gold alloy wire for a bonding wire having high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, and high resin flowability resistance. The gold alloy wire for a bonding wire comprises one kind or two kinds of Pt and Pd of 1000 to less than 5000 ppm in total, Ir: 1 to 200 ppm, Ca: 20 to 100 ppm, Eu: 10 to 100 ppm, Be: 0.1 to 20 ppm, if necessary, and La: 10 to 100 ppm, if necessary. The total amount of at least two kinds of Ca, Eu, Be, and La is in a range of 50 to 250 ppm.
摘要:
[PROBLEMS] To provide a gold alloy wire which is excellent in the property of forming a melt ball, suitability for stitch bonding, and wire strength and, despite this, gives a press-bonded ball having excellent circularity, and which is usable in high-density wiring for a semiconductor device. [MEANS FOR SOLVING PROBLEMS] The gold alloy wire for use in ball bonding is made of a gold alloy comprising 10-50 mass ppm magnesium (Mg), 5-20 mass ppm europium (Eu), 2-9 mass ppm calcium (Ca), and gold (Au) having a purity of 99.995 mass% or higher as the remainder, wherein the calcium (Ca) content is up to half the europium (Eu) content by mass.