公开(公告)号：EP2681006B1

公开(公告)日：2017-10-18

申请号：EP12754674.5

申请日：2012-02-27

申请人： 3M Innovative Properties Company

发明人： SMITHSON, Robert L.W., ,  EMSLANDER, Jeffrey O., ,  FLEMING, Danny L.,

IPC分类号： B23K26/00 ,  B41M5/26

CPC分类号： B23K26/18 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/0063 ,  B23K26/009 ,  B41M5/267 ,  Y10T428/14 ,  Y10T428/1476

公开(公告)号：EP3077149A4

公开(公告)日：2017-09-20

申请号：EP14867057

申请日：2014-12-02

申请人： ELECTRO SCIENT IND INC

发明人： ZHANG HAIBIN ,  REKOW MATHEW ,  YANG CHUAN ,  DARWIN MICHAEL J

IPC分类号： B23K26/00 ,  B23K26/08 ,  B23K26/36 ,  B23K26/53 ,  B23K26/55 ,  B23K37/02

CPC分类号： B23K26/009 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/006 ,  B23K26/083 ,  B23K26/0876 ,  B23K26/53 ,  B23K26/55 ,  B23K37/0235 ,  B23K2203/50 ,  H01L23/544 ,  Y10T428/24364

公开(公告)号：EP2980033A4

公开(公告)日：2016-12-07

申请号：EP14773616

申请日：2014-03-25

申请人： ASAHI GLASS CO LTD

发明人： SAITO ISAO ,  NAGATA TAKAHIRO

IPC分类号： C03B33/09 ,  B23K26/00 ,  B23K26/042 ,  B23K26/06 ,  B23K26/066 ,  B23K26/073 ,  B23K26/08 ,  B23K26/12 ,  B23K26/362 ,  B23K26/38 ,  B23K26/40 ,  B23K103/00

CPC分类号： C03B33/091 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0853 ,  B23K26/127 ,  B23K26/361 ,  B23K26/40 ,  B23K2203/30 ,  B23K2203/50 ,  C03B33/093

摘要： A glass sheet processing method is provided that includes a step of forming a cleavage in a glass sheet with thermal stress that is generated by irradiating a laser beam on the glass sheet. The laser beam is emitted from a light source and is irradiated on the surface of the glass sheet to form an irradiation area of the laser beam on the surface, and the laser beam that has been transmitted through the surface of the glass sheet is irradiated on the back face of the glass sheet to form an irradiation area of the laser beam on the back face. In a case where each irradiation includes a peak position of the power density of the laser beam, each irradiation area is arranged to have an asymmetrical power density distribution that is asymmetrical with respect to a reference line that passes through the peak position of the irradiation area and is parallel to a moving direction of the peak position. In a case where each irradiation area does not include a peak position of the power density of the laser beam, each irradiation area is arranged to have an asymmetrical shape that is asymmetrical with respect to a reference line that passes through a centroid position of the irradiation area and is parallel to a moving direction of the centroid position.

摘要翻译： 提供一种玻璃板加工方法，其包括通过在玻璃板上照射激光而产生的热应力在玻璃板上形成裂纹的步骤。 激光束从光源发射并照射在玻璃板的表面上以形成激光束在表面上的照射区域，并且已经透过玻璃板表面的激光束被照射在 玻璃板的背面，以形成背面上的激光束的照射区域。 在每个照射包括激光束的功率密度的峰值位置的情况下，每个照射区域被布置成具有相对于穿过照射区域的峰值位置的参考线不对称的非对称功率密度分布 并且平行于峰值位置的移动方向。 在每个照射区域不包括激光束的功率密度的峰值位置的情况下，每个照射区域被布置为具有相对于通过照射的质心位置的参考线不对称的不对称形状 并且平行于重心位置的移动方向。

公开(公告)号：EP2817819A4

公开(公告)日：2015-09-02

申请号：EP13752284

申请日：2013-02-26

申请人： SOLEXEL INC

发明人： YONEHARA TAKAO ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN

IPC分类号： H01L31/18 ,  B23K26/00 ,  H01L21/268

CPC分类号： H01L21/7813 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/702 ,  B23K2201/40 ,  B23K2203/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

摘要翻译： 提供了方法和系统，用于使用激光照射从较厚的施主晶片分离和分离包含光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：EP2290706A3

公开(公告)日：2013-10-16

申请号：EP10151573.2

申请日：2010-01-25

申请人： Seoul Opto Device Co., Ltd.

发明人： Kim, Chang Youn ,  Kim, Joon Hee ,  You, Jong Kyun ,  Kim, Hwa Mok

IPC分类号： H01L33/00 ,  B23K26/42

CPC分类号： H01L33/0079 ,  B23K26/0054 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/702 ,  B23K2203/50

摘要： Disclosed is a method of fabricating a light emitting diode using a laser lift-off technique. The method includes growing epitaxial layers, which include a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer, on a first substrate, bonding a second substrate having a different coefficient of thermal expansion from that of the first substrate to the epitaxial layers at a first temperature of the first substrate higher than room temperature, and separating the first substrate from the epitaxial layers by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from suffering cracking or fracture. A laser lift-off apparatus including a heater is also disclosed.

公开(公告)号：EP2623991A1

公开(公告)日：2013-08-07

申请号：EP11829279.6

申请日：2011-09-29

申请人： Fujikura Co., Ltd. ,  The University of Tokyo

发明人： NUKAGA Osamu ,  YAMAMOTO Satoshi ,  TABATA Kazuhito ,  SUGIYAMA Masakazu

IPC分类号： G01N35/08 ,  B01J19/00 ,  B23K26/00 ,  B81B1/00 ,  B81C1/00 ,  G01N37/00 ,  C12M1/00 ,  G01N27/28

CPC分类号： B01J19/0093 ,  B01J2219/00891 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/006 ,  B23K26/0624 ,  B23K26/08 ,  B23K26/1224 ,  B23K2203/50 ,  G01N15/1031 ,  G01N33/48728 ,  G01N2015/1006

摘要： A base body includes: a base member (4); a channel (3) provided in the base member (4), the channel having an inner wall surface and flowing a fluid; a fine vacuum hole (1) provided in the inner wall, the fine vacuum hole causing the channel (3) to communicate with the outside of the base member (4) and having an opening; and a slow flow portion (P) disposed at a position close to the opening of the fine vacuum hole (1) in the inner wall surface, the slow flow portion slows a flow of the fluid, wherein at least a portion that configures the fine vacuum hole in the base member is formed of a single member.

摘要翻译： 基体包括：基体（4）; 设置在所述基座构件（4）中的通道（3），所述通道具有内壁表面并使流体流动; 设置在内壁上的精细真空孔（1），所述精细真空孔使通道（3）与基座构件（4）的外部连通并具有开口; 和设置在靠近所述内壁面中的所述真空细孔（1）的开口的位置的缓流部（P），所述缓流部缓慢流体的流动，其中至少一部分构成所述细 基部构件中的真空孔由单个构件形成。

公开(公告)号：EP2289660A1

公开(公告)日：2011-03-02

申请号：EP10008939.0

申请日：2010-08-27

申请人： Roland Weber Vektor Pharma

发明人： Weber, Roland

IPC分类号： B23K26/08 ,  B23K26/36 ,  B23K26/38 ,  B23K26/40 ,  A61K9/70 ,  B31D1/02

CPC分类号： B23K26/0846 ,  B23K26/0054 ,  B23K26/36 ,  B23K26/361 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2201/16 ,  B23K2201/34 ,  B23K2203/08 ,  B23K2203/16 ,  B23K2203/172 ,  B23K2203/42 ,  B31D1/021 ,  B31D1/026

摘要： Die Erfindung betrifft eine Vorrichtung (1) zum Schneiden von wirkstoffbeladenen flächenmäßigen Substraten (4,20,21), insbesondere von Transdermalen Systemen (TDS) wie Wirkstoffpflastern oder oral verabreichbaren Wirkstofffilmen (ODF), wobei das Substrat (4,20,21) als Endlossubstrat ausgebildet ist, welches durch angeordnete Vorschubmittel (2,3) zum Transport kontinuierlich transportiert wird, wobei die Vorschubmittel (2,3) eine erstes und ein zweites Walzenpaar (2,3) umfassen, welche Vorschubmomente auf das Endlossubstrat (4,20,21) ausüben, und das Endlossubstrat (4,20,21) zwischen den Walzenpaaren (2,3) frei schwebend eingespannt ist, und wobei die Vorrichtung (1) einen Schneidbereich (5) zwischen den Walzenpaaren (2,3) mit einem Schneidlaser (6) segmentartigen Schneiden des Substrats (4,20,21) umfasst, welcher ein berührungsloses Schneiden in einer einstellbaren Schnitttiefe entlang einer vorgegebenen Kontur ausführt, sowie ein entsprechendes Verfahren.

摘要翻译： 本发明涉及一种用于负载药物的面积衬底（4,20,21）的切割装置（1），特别是经皮系统（TDS）作为活性成分的贴剂或口服给药的药物的膜（ODF），其中所述衬底（4,20,21），其 无端基底中形成，其被连续输送通过用于输送设置进给装置（2,3），其中，所述供给装置（2,3）包括第一和第二对辊子（2,3），其进料环形基板（4,20上的扭矩， 21）施加，且辊对之间的无端基底（4,20,21）（2,3）自由悬挂夹紧，并且其中（1）包括切割部分的装置（5）的辊对（2,3）具有切割激光器之间 （6）包括段状切割衬底（4,20,21），其执行非接触在沿着预先确定的轮廓切口的可调深度切割，以及相应的方法。

公开(公告)号：EP1470573A2

公开(公告)日：2004-10-27

申请号：EP03706270.0

申请日：2003-01-30

申请人： Osram Opto Semiconductors GmbH

发明人： FEHRER, Michael ,  HAHN, Berthold ,  HÄRLE, Volker ,  KAISER, Stephan ,  OTTE, Frank ,  PLÖSSL, Andreas

IPC分类号： H01L21/00

CPC分类号： H01L21/76251 ,  B23K26/0054 ,  B23K26/40 ,  B23K2203/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： The invention relates to a method for producing a semiconductor element, especially a thin-layered element. According to the invention, a semi-conductive layer is separated from a substrate by radiation from a laser beam having a plateau-shaped spatial beam profile. Additionally, the semiconductor layer is applied to a support having an adapted thermal dilatation coefficient before being separated. The invention is particularly suitable for semiconductor layers which contain a nitride-compound semiconductor.

摘要翻译： 本发明涉及用于制造半导体元件，特别是薄层元件的方法。 根据本发明，半导体层通过来自具有平台形空间光束轮廓的激光束的辐射与衬底分离。 此外，半导体层在被分离之前被施加到具有适应的热膨胀系数的支撑件。 本发明特别适用于含有氮化物半导体的半导体层。

公开(公告)号：EP2656961A1

公开(公告)日：2013-10-30

申请号：EP12744669.8

申请日：2012-02-01

申请人： Fujikura Ltd. ,  The University of Tokyo

发明人： NUKAGA Osamu ,  YAMAMOTO Satoshi ,  TABATA Kazuhito ,  SUGIYAMA Masakazu

IPC分类号： B23K26/36 ,  B23K26/00 ,  B23K26/04 ,  B23K26/40 ,  B81C99/00 ,  C03C15/00 ,  C03C23/00

CPC分类号： B81C1/00547 ,  B23K26/0054 ,  B32B3/266 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0353 ,  B81C1/00507 ,  B81C2201/013 ,  B81C2201/0143 ,  C03C15/00 ,  C03C23/0025 ,  Y10T428/24273

摘要： A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.

摘要翻译： 一种制造具有微孔的基体的方法包括：通过用具有脉冲持续时间的第一激光的焦点在基体上进行扫描来形成第一改质区域和第二改质区域中的至少一个 皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 以及通过蚀刻去除第一改质区域和第三改质区域而形成微孔。

公开(公告)号：EP2572373A2

公开(公告)日：2013-03-27

申请号：EP11729434.8

申请日：2011-05-17

申请人： Corelase OY

发明人： KANGASTUPA, Jarno ,  AMBERLA, Tiina ,  YAMADA, Kazuo

IPC分类号： H01L21/60 ,  B23K26/00 ,  C03C27/00 ,  G02F1/13

CPC分类号： H01L24/91 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/244 ,  B23K2203/56 ,  G02F1/1339 ,  G02F1/1345 ,  H01L23/562 ,  H01L24/80 ,  H01L24/83 ,  H01L2224/056 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29171 ,  H01L2224/2918 ,  H01L2224/80001 ,  H01L2224/80224 ,  H01L2224/80359 ,  H01L2224/80488 ,  H01L2224/83193 ,  H01L2224/83224 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83471 ,  H01L2224/8348 ,  H01L2224/9211 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01105 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention concerns a method of fusing and electrically contacting a first insulating substrate (28A) having at least one first conductive layer (29A) thereon with at least one second insulating substrate (28B) having at least one second conductive layer (29B) thereon, the method comprising: stacking the first and second substrates (28A, 28B) such that an interface zone is formed between them, the interface zone comprising an electrical contacting zone where at least one first conductive layers (29A) faces and is at least partially aligned with at least one second conductive layer (29B), and a substrate fusing zone where the insulating substrates (28A, 28B) directly face each other; focusing to the interface zone of the substrates (28A, 28B) through one of the substrates (28A, 28B) a plurality of sequential focused laser pulses from a laser source, the pulse duration, pulse frequency and pulse power of the laser light being chosen to provide local melting the substrate (28A, 28B) materials and the conductive layers (29A, 29B); and moving the laser source and the substrate with respect to each other at a predetermined velocity and path so that a structurally modified zone is formed to the interface zone, the structurally modified zone overlapping with said electrical contacting zone and said substrate fusing zone. The invention provides a convenient way of manufacturing well-sealed joints and electrical contacts for multifunction electronic devices, for example.