公开(公告)号：EP0540522A1

公开(公告)日：1993-05-12

申请号：EP91905975.0

申请日：1990-10-16

申请人： International Business Machines Corporation

发明人： AGARWALA, Birendra, Nath ,  AHSAN, Aziz, Mohammed ,  BROSS, Arthur ,  CHADURJIAN, Mark, Frank ,  KOOPMAN, Nicholas, George ,  LEE, Li-Chung ,  PUTTLITZ, Karl, J. ,  RAY, Sudipta, Kumar ,  RYAN, James, Gardner ,  SCHAEFER, Joseph, George ,  SRIVASTAVA, Kamalesh, Kumar ,  TOTTA, Paul, Anthony ,  WALTON, Erick, Gregory ,  WIRSING, Adolf, Ernest

IPC分类号： H01L21 ,  H01L23 ,  H05K3

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2224/13017 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1366 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/1367 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/13676 ,  H01L2224/13679 ,  H01L2224/1368 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H05K3/3431 ,  H05K3/3457 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/00

摘要： The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.

公开(公告)号：EP3164887A4

公开(公告)日：2018-03-07

申请号：EP15815539

申请日：2015-07-01

申请人： TEXAS INSTRUMENTS INC

发明人： MASUMOTO MUTSUMI

IPC分类号： H01L23/538 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L23/3171 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/19 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/02379 ,  H01L2224/03334 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/1181 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13666 ,  H01L2224/1367 ,  H01L2224/13671 ,  H01L2224/1368 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/8385 ,  H01L2224/8389 ,  H01L2224/96 ,  H01L2924/10253 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00014

摘要： A method for fabricating packaged semiconductor devices in panel format. A flat panel sheet dimensioned for a set of contiguous chips includes a stiff substrate of an insulating plate, and a tape having a surface layer of a first adhesive releasable at elevated temperatures, a core base film, and a bottom layer with a second adhesive attached to the substrate. Attaching a set onto the first adhesive layer, the chip terminals having terminals with metal bumps facing away from the first adhesive layer. Laminating low CTE insulating material to fill gaps between the bumps and to form an insulating frame surrounding the set. Grinding lamination material to expose the bumps. Plasma-cleaning assembly, sputtering uniform metal layer across assembly, optionally plating metal layer, and patterning metal layer to form rerouting traces and extended contact pads.

公开(公告)号：EP2958136A4

公开(公告)日：2016-09-07

申请号：EP14751278

申请日：2014-01-16

申请人： OLYMPUS CORP

发明人： SAITO HARUHISA ,  TADAKI YOSHITAKA ,  MIGITA CHIHIRO

IPC分类号： H01L27/14 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L27/14636 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05096 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05576 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11622 ,  H01L2224/11826 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13013 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13551 ,  H01L2224/13552 ,  H01L2224/1356 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/13684 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/8109 ,  H01L2224/81092 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8138 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81466 ,  H01L2224/81469 ,  H01L2224/81484 ,  H01L2224/81903 ,  H01L2224/831 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/381 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2224/11825 ,  H01L2924/014

公开(公告)号：EP3164887A1

公开(公告)日：2017-05-10

申请号：EP15815539.0

申请日：2015-07-01

申请人： Texas Instruments Incorporated

发明人： MASUMOTO, Mutsumi

IPC分类号： H01L23/538 ,  H01L21/56

CPC分类号： H01L23/3171 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/19 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/02379 ,  H01L2224/03334 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/1181 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13666 ,  H01L2224/1367 ,  H01L2224/13671 ,  H01L2224/1368 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/8385 ,  H01L2224/8389 ,  H01L2224/96 ,  H01L2924/10253 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00014

摘要： A method for fabricating packaged semiconductor devices in panel format. A flat panel sheet dimensioned for a set of contiguous chips includes a stiff substrate of an insulating plate, and a tape having a surface layer of a first adhesive releasable at elevated temperatures, a core base film, and a bottom layer with a second adhesive attached to the substrate. Attaching a set onto the first adhesive layer, the chip terminals having terminals with metal bumps facing away from the first adhesive layer. Laminating low CTE insulating material to fill gaps between the bumps and to form an insulating frame surrounding the set. Grinding lamination material to expose the bumps. Plasma-cleaning assembly, sputtering uniform metal layer across assembly, optionally plating metal layer, and patterning metal layer to form rerouting traces and extended contact pads.

摘要翻译： 一种用于制造包装在面板格式的半导体器件的方法。 尺寸构造成用于一组邻接的芯片的平板片材包括绝缘板的刚性基板，和连接的具有第一粘合剂在升高的温度，一个核心基片可释放的表面层的胶带，并与第二粘合剂底层 到承印物。 附接一组到第一粘合剂层，具有与从第一粘合剂层背向金属凸块端子的芯片端子。 层叠低CTE绝缘材料填充凸块之间的间隙，并形成绝缘框架包围所述一组的。 磨层压材料暴露的颠簸。 等离子体清洁组件，跨越组件溅射均匀的金属层，任选电镀金属层，和图案化金属层以形成重新路由迹线和延长的接触垫。

公开(公告)号：EP2958136A2

公开(公告)日：2015-12-23

申请号：EP14751278.4

申请日：2014-01-16

申请人： Olympus Corporation

发明人： SAITO Haruhisa ,  TADAKI Yoshitaka ,  MIGITA Chihiro

IPC分类号： H01L21/60 ,  H01L27/14

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L27/14636 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05096 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05576 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11622 ,  H01L2224/11826 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13013 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13551 ,  H01L2224/13552 ,  H01L2224/1356 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/13684 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/8109 ,  H01L2224/81092 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8138 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81466 ,  H01L2224/81469 ,  H01L2224/81484 ,  H01L2224/81903 ,  H01L2224/831 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/381 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2224/11825 ,  H01L2924/014

摘要： A semiconductor substrate includes a semiconductor substrate body (12d) in which a wiring (16) is formed and a bonding electrode (12a) provided to protrude from a first surface (12c) of the semiconductor substrate body (12d). The bonding electrode (12a) comprises a composite including a first metal portion (14) which is provided to protrude from the first surface (12c) of the semiconductor substrate body (12d) and of which a base end portion in a protrusion direction is electrically connected to the wiring (16), and a second metal portion (15) which is formed of a second metal harder than first metal of which the first metal portion (14) is formed and which is provided to be bonded to the first metal portion (14) in a range equal to or less than a protrusion height of the first metal portion (14).

摘要翻译： 半导体衬底包括其中形成布线（16）的半导体衬底本体（12d）和从半导体衬底本体（12d）的第一表面（12c）突出设置的接合电极（12a）。 接合电极（12a）包括复合体，其包括设置成从半导体衬底本体（12d）的第一表面（12c）突出的第一金属部分（14），并且其中突出方向上的基端电极 连接到布线（16）上的第二金属部分（15）和与第一金属部分（14）形成的第二金属硬化的第二金属部分（15），并且设置成与第一金属部分 （14）在等于或小于第一金属部分（14）的突出高度的范围内。

公开(公告)号：EP1653503A3

公开(公告)日：2012-04-18

申请号：EP05023273.5

申请日：2005-10-25

申请人： Seiko Epson Corporation

发明人： Tanaka, Shuichi

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L23/562 ,  G02F1/13458 ,  H01L21/563 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L24/91 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0236 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11831 ,  H01L2224/13016 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16225 ,  H01L2224/27825 ,  H01L2224/27831 ,  H01L2224/29008 ,  H01L2224/29013 ,  H01L2224/29017 ,  H01L2224/29023 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29563 ,  H01L2224/2957 ,  H01L2224/29582 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29655 ,  H01L2224/29664 ,  H01L2224/29666 ,  H01L2224/29671 ,  H01L2224/29684 ,  H01L2224/29695 ,  H01L2224/30155 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01066 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01084

摘要： A semiconductor device including a semiconductor element (121), an electrode pad (24) formed on the semiconductor element (121), and a bump electrode (10) conductively connected to the electrode pad (24) which includes a resin bump (12) formed on an active face (121a) of the semiconductor element (121) and a conductive layer (20) provided from the electrode pad (24) to the surface of the resin bump (12), the conductive layer (20) and the resin bump (12) being arranged without adhesion.

公开(公告)号：EP1653503A2

公开(公告)日：2006-05-03

申请号：EP05023273.5

申请日：2005-10-25

申请人： SEIKO EPSON CORPORATION

发明人： Tanaka, Shuichi

IPC分类号： H01L21/60

CPC分类号： H01L23/562 ,  G02F1/13458 ,  H01L21/563 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L24/91 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0236 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11831 ,  H01L2224/13016 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16225 ,  H01L2224/27825 ,  H01L2224/27831 ,  H01L2224/29008 ,  H01L2224/29013 ,  H01L2224/29017 ,  H01L2224/29023 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29563 ,  H01L2224/2957 ,  H01L2224/29582 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29655 ,  H01L2224/29664 ,  H01L2224/29666 ,  H01L2224/29671 ,  H01L2224/29684 ,  H01L2224/29695 ,  H01L2224/30155 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01066 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01084

摘要： A semiconductor device including a semiconductor element (121), an electrode pad (24) formed on the semiconductor element (121), and a bump electrode (10) conductively connected to the electrode pad (24) which includes a resin bump (12) formed on an active face (121a) of the semiconductor element (121) and a conductive layer (20) provided from the electrode pad (24) to the surface of the resin bump (12), the conductive layer (20) and the resin bump (12) being arranged without adhesion.

摘要翻译： 包括半导体元件（121），形成在半导体元件（121）上的电极焊盘（24））的半导体器件和与包括树脂凸块（12）的电极焊盘（24）导电连接的突起电极（10） 形成在所述半导体元件（121）的有源面（121a）上，以及从所述电极焊盘（24）向所述树脂凸块（12）的表面设置的导电层（20），所述导电层（20）和所述树脂 凹凸（12）没有粘附地排列。