公开(公告)号：EP2323848A2

公开(公告)日：2011-05-25

申请号：EP09767080.6

申请日：2009-06-18

申请人： Alcatel-Lucent USA Inc.

发明人： KEMPERS, Roger, Scott ,  KRISHNAN, Shankar ,  LYONS, Alan, Michael ,  SALAMON, Todd, Richard

IPC分类号： B32B37/10 ,  B32B15/01

CPC分类号： B23P15/26 ,  B21D53/02 ,  B21D53/022 ,  B21D53/04 ,  F28F21/00 ,  F28F21/081 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/42 ,  H01L24/64 ,  H01L24/66 ,  H01L24/69 ,  H01L25/0657 ,  H01L2225/06527 ,  H01L2225/06575 ,  H01L2225/06589 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  Y10T29/4935 ,  Y10T428/12396 ,  Y10T428/24562 ,  Y10T428/24851

摘要： An apparatus 100 comprising a first substrate 130 having a first surface 125, a second substrate 132 having a second surface 127 facing the first surface and an array 170 of metallic raised features 170 being located on the first surface, each raised feature being in contact with the first surface to the second surface, a portion of the raised features being deformed via a compressive force 305.

公开(公告)号：EP3082243A1

公开(公告)日：2016-10-19

申请号：EP14870416.6

申请日：2014-12-12

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： ISHIMARU, Tetsuya ,  MORI, Mutsuhiro ,  SAKANO, Junichi ,  ONDA, Kohhei

IPC分类号： H02M7/12 ,  H01L25/07 ,  H02K11/00 ,  H02K19/36

CPC分类号： H01L29/7808 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/367 ,  H01L23/373 ,  H01L23/544 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/66 ,  H01L24/69 ,  H01L24/73 ,  H01L24/75 ,  H01L24/78 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/16 ,  H01L29/7805 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/40499 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48499 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/75754 ,  H01L2224/78753 ,  H01L2224/78802 ,  H01L2224/83101 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/9221 ,  H01L2924/00011 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H02K11/00 ,  H02K11/046 ,  H02K19/36 ,  H02M1/08 ,  H02M7/003 ,  H02M7/217 ,  H02M7/219 ,  H02M2001/0006 ,  H02P9/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2224/84

摘要： The semiconductor device (S1) has a first external electrode (101) having an outer peripheral section (101s), which has a circular shape in top plan view and which is to be attached to an alternator (Ot). On the first external electrode (101) there mounted: a MOSFET chip (103); a control circuitry (104) to which voltages at or a current flowing between a first main terminal (103d) and a second main terminal (103s) of the MOSFET chip (103) is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate (103g) of the MOSFET chip(103); and a capacitor (105) for providing a power supply to the control circuitry (104). The semiconductor device further has a second external electrode (107) disposed opposite to the first external electrode with respect to the MOSFET chip (103). An electrical connection is made between the first main terminal (103d) of the MOSFET chip (103) and the first external electrode (101), and between the second main terminal (103s) of the MOSFET chip (103) and the second external electrode (107).

摘要翻译： 半导体装置（S1）具有具有外周部（101s）的第一外部电极（101），其在顶部平面图中具有圆形形状，并且附接到交流发电机（Ot）。 在第一外部电极（101）上安装有：一个MOSFET芯片（103）; 输入在MOSFET芯片（103）的第一主端子（103d）和第二主端子（103s）之间流动的电流或电流的控制电路（104），其基于电压或 电流，施加到MOSFET芯片（103）的栅极（103g）的控制信号; 以及用于向控制电路（104）提供电源的电容器（105）。 半导体器件还具有相对于MOSFET芯片（103）与第一外部电极相对设置的第二外部电极（107）。 在MOSFET芯片（103）的第一主端子（103d）和第一外部电极（101）之间以及在MOSFET芯片（103）的第二主端子（103s）和第二外部电极 （107）。

公开(公告)号：EP3082243A4

公开(公告)日：2017-12-06

申请号：EP14870416

申请日：2014-12-12

申请人： HITACHI POWER SEMICONDUCTOR DEVICE LTD

发明人： ISHIMARU TETSUYA ,  MORI MUTSUHIRO ,  SAKANO JUNICHI ,  ONDA KOHHEI

IPC分类号： H01L23/051 ,  H01L23/31 ,  H01L23/367 ,  H01L23/488 ,  H01L23/544 ,  H01L25/07 ,  H02M7/219

CPC分类号： H01L29/7808 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/367 ,  H01L23/373 ,  H01L23/544 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/66 ,  H01L24/69 ,  H01L24/73 ,  H01L24/75 ,  H01L24/78 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L29/7805 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/40499 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48499 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/75754 ,  H01L2224/78753 ,  H01L2224/78802 ,  H01L2224/83101 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/9221 ,  H01L2924/00011 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H02K11/00 ,  H02K11/046 ,  H02K19/36 ,  H02M1/08 ,  H02M7/003 ,  H02M7/217 ,  H02M7/219 ,  H02M2001/0006 ,  H02P9/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2224/84

摘要： The semiconductor device (S1) has a first external electrode (101) having an outer peripheral section (101s), which has a circular shape in top plan view and which is to be attached to an alternator (Ot). On the first external electrode (101) there mounted: a MOSFET chip (103); a control circuitry (104) to which voltages at or a current flowing between a first main terminal (103d) and a second main terminal (103s) of the MOSFET chip (103) is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate (103g) of the MOSFET chip(103); and a capacitor (105) for providing a power supply to the control circuitry (104). The semiconductor device further has a second external electrode (107) disposed opposite to the first external electrode with respect to the MOSFET chip (103). An electrical connection is made between the first main terminal (103d) of the MOSFET chip (103) and the first external electrode (101), and between the second main terminal (103s) of the MOSFET chip (103) and the second external electrode (107).

公开(公告)号：EP2896067B1

公开(公告)日：2017-02-01

申请号：EP13762813.7

申请日：2013-09-13

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： VICARD, Dominique ,  BRUN, Jean

IPC分类号： H01L23/10 ,  H01L23/12 ,  H01L23/13 ,  H01L23/14 ,  H01L23/31 ,  H01L23/00 ,  H05K1/11 ,  H05K1/18 ,  H05K3/46 ,  H05K3/00

CPC分类号： H05K1/11 ,  H01L23/10 ,  H01L23/3157 ,  H01L24/66 ,  H01L24/69 ,  H01L2224/66 ,  H01L2224/69 ,  H01L2224/72 ,  H01L2924/00014 ,  H01L2924/12041 ,  H05K1/181 ,  H05K1/182 ,  H05K3/0091 ,  H05K3/46 ,  H05K2201/09036 ,  H01L2224/48 ,  H01L2924/00

公开(公告)号：EP3007226A1

公开(公告)日：2016-04-13

申请号：EP15188280.0

申请日：2015-10-05

申请人： Epistar Corporation

发明人： He, Guan-Ru ,  Yeh, Jui-Hung ,  Huang, Kevin T. Y. ,  Chen, Chih-Chung

IPC分类号： H01L25/075

CPC分类号： H01L33/62 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/40 ,  H01L24/48 ,  H01L24/64 ,  H01L24/66 ,  H01L24/69 ,  H01L24/73 ,  H01L24/80 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/89 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/36 ,  H01L33/486 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/29194 ,  H01L2224/32 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/64 ,  H01L2224/73251 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/8085 ,  H01L2224/80862 ,  H01L2224/80874 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/84455 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/89 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2224/45099 ,  H01L2224/69 ,  H01L2224/83 ,  H01L2224/08 ,  H01L2224/85 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2224/37099

摘要： LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.

摘要翻译： 提供了一种LED芯片封装组件，其有助于通过可延伸的金属布线的图案将预先布线的LED芯片安装成彼此电连接的集成方法。 通过可延伸的金属布线彼此电连接的LED芯片分别替代LED芯片的拾取和放置安装以及引线接合工艺。 晶圆级MEMS技术用于形成并联布线，并联连接到各种接触焊盘。 连接LED芯片的接合线被制成水平布置的可延伸的金属布线，其可以是弹簧形状，并且允许连接的LED芯片之间的距离的扩展和收缩。 进一步提供胶带以与LED芯片接合，并且尺寸延伸以扩大LED芯片之间的距离以超过一个或多个预定距离。

公开(公告)号：EP3007226B1

公开(公告)日：2018-12-05

申请号：EP15188280.0

申请日：2015-10-05

申请人： Epistar Corporation

发明人： He, Guan-Ru ,  Yeh, Jui-Hung ,  Huang, Kevin T. Y. ,  Chen, Chih-Chung

IPC分类号： H01L25/075

CPC分类号： H01L33/62 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/40 ,  H01L24/48 ,  H01L24/64 ,  H01L24/66 ,  H01L24/69 ,  H01L24/73 ,  H01L24/80 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/89 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/36 ,  H01L33/486 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/29194 ,  H01L2224/32 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/64 ,  H01L2224/73251 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/8085 ,  H01L2224/80862 ,  H01L2224/80874 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/84455 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/89 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2224/45099 ,  H01L2224/69 ,  H01L2224/83 ,  H01L2224/08 ,  H01L2224/85 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2224/37099

摘要： LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.

公开(公告)号：EP2896067A1

公开(公告)日：2015-07-22

申请号：EP13762813.7

申请日：2013-09-13

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： VICARD, Dominique ,  BRUN, Jean

IPC分类号： H01L23/10 ,  H01L23/12 ,  H01L23/13 ,  H01L23/14 ,  H01L23/31 ,  H01L23/00

CPC分类号： H05K1/11 ,  H01L23/10 ,  H01L23/3157 ,  H01L24/66 ,  H01L24/69 ,  H01L2224/66 ,  H01L2224/69 ,  H01L2224/72 ,  H01L2924/00014 ,  H01L2924/12041 ,  H05K1/181 ,  H05K1/182 ,  H05K3/0091 ,  H05K3/46 ,  H05K2201/09036 ,  H01L2224/48 ,  H01L2924/00

摘要： The invention relates to a cap (1) that is to be assembled to at least one chip element (2), said cap comprising a stack of a plurality of electrically insulating layers (1a) defining at least one shoulder (3) forming a portion of a first groove (4) for accommodating a wire element (12). The cap further comprises: at least one electrical contact (6) arranged on an assembly surface (7) of the stack, wherein said surface is to be mounted on a surface of the chip element (2); at least one electrical connection terminal (5, 5') arranged on a wall of the shoulder (3); and an electrical connection element (8) electrically connecting said electrical connection element (5) to the electrical contact (6).

公开(公告)号：EP2323848A4

公开(公告)日：2014-02-26

申请号：EP09767080

申请日：2009-06-18

申请人： ALCATEL LUCENT USA INC

发明人： KEMPERS ROGER SCOTT ,  KRISHNAN SHANKAR ,  LYONS ALAN MICHAEL ,  SALAMON TODD RICHARD

IPC分类号： B32B37/10 ,  B32B15/01

CPC分类号： B23P15/26 ,  B21D53/02 ,  B21D53/022 ,  B21D53/04 ,  F28F21/00 ,  F28F21/081 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/42 ,  H01L24/64 ,  H01L24/66 ,  H01L24/69 ,  H01L25/0657 ,  H01L2225/06527 ,  H01L2225/06575 ,  H01L2225/06589 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  Y10T29/4935 ,  Y10T428/12396 ,  Y10T428/24562 ,  Y10T428/24851