公开(公告)号：EP2779244A3

公开(公告)日：2016-10-05

申请号：EP14158995.2

申请日：2014-03-11

申请人： Semiconductor Components Industries, LLC

发明人： Salih, Ali ,  Liu, Chun-Li ,  Grivna, Gordon

IPC分类号： H01L29/778 ,  H01L21/336 ,  H01L29/66 ,  H01L23/532 ,  H01L23/498 ,  H01L23/482 ,  H01L23/522 ,  H01L29/20 ,  H01L21/768 ,  H01L23/00 ,  H01L21/683

CPC分类号： H01L23/5226 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/4824 ,  H01L23/49827 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/84 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2221/68327 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/04034 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/37187 ,  H01L2224/3719 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37647 ,  H01L2224/37655 ,  H01L2224/37664 ,  H01L2224/40499 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/07811 ,  H01L2224/45099

摘要： In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.

公开(公告)号：EP3082243A1

公开(公告)日：2016-10-19

申请号：EP14870416.6

申请日：2014-12-12

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： ISHIMARU, Tetsuya ,  MORI, Mutsuhiro ,  SAKANO, Junichi ,  ONDA, Kohhei

IPC分类号： H02M7/12 ,  H01L25/07 ,  H02K11/00 ,  H02K19/36

CPC分类号： H01L29/7808 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/367 ,  H01L23/373 ,  H01L23/544 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/66 ,  H01L24/69 ,  H01L24/73 ,  H01L24/75 ,  H01L24/78 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/16 ,  H01L29/7805 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/40499 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48499 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/75754 ,  H01L2224/78753 ,  H01L2224/78802 ,  H01L2224/83101 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/9221 ,  H01L2924/00011 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H02K11/00 ,  H02K11/046 ,  H02K19/36 ,  H02M1/08 ,  H02M7/003 ,  H02M7/217 ,  H02M7/219 ,  H02M2001/0006 ,  H02P9/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2224/84

摘要： The semiconductor device (S1) has a first external electrode (101) having an outer peripheral section (101s), which has a circular shape in top plan view and which is to be attached to an alternator (Ot). On the first external electrode (101) there mounted: a MOSFET chip (103); a control circuitry (104) to which voltages at or a current flowing between a first main terminal (103d) and a second main terminal (103s) of the MOSFET chip (103) is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate (103g) of the MOSFET chip(103); and a capacitor (105) for providing a power supply to the control circuitry (104). The semiconductor device further has a second external electrode (107) disposed opposite to the first external electrode with respect to the MOSFET chip (103). An electrical connection is made between the first main terminal (103d) of the MOSFET chip (103) and the first external electrode (101), and between the second main terminal (103s) of the MOSFET chip (103) and the second external electrode (107).

摘要翻译： 半导体装置（S1）具有具有外周部（101s）的第一外部电极（101），其在顶部平面图中具有圆形形状，并且附接到交流发电机（Ot）。 在第一外部电极（101）上安装有：一个MOSFET芯片（103）; 输入在MOSFET芯片（103）的第一主端子（103d）和第二主端子（103s）之间流动的电流或电流的控制电路（104），其基于电压或 电流，施加到MOSFET芯片（103）的栅极（103g）的控制信号; 以及用于向控制电路（104）提供电源的电容器（105）。 半导体器件还具有相对于MOSFET芯片（103）与第一外部电极相对设置的第二外部电极（107）。 在MOSFET芯片（103）的第一主端子（103d）和第一外部电极（101）之间以及在MOSFET芯片（103）的第二主端子（103s）和第二外部电极 （107）。

公开(公告)号：EP2889902A1

公开(公告)日：2015-07-01

申请号：EP13832786.1

申请日：2013-08-09

申请人： Mitsubishi Electric Corporation

发明人： FUJINO Junji ,  YONEDA Yutaka ,  ONISHI Yoshitaka ,  SUGAWARA Masafumi

IPC分类号： H01L23/36 ,  H01L21/60 ,  H01L25/07 ,  H01L25/18 ,  H05K7/20

CPC分类号： H05K1/0203 ,  H01L23/13 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/492 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/4005 ,  H01L2224/40105 ,  H01L2224/4024 ,  H01L2224/4118 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83801 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/16152 ,  H01L2924/16172 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/92252 ,  H01L2224/85 ,  H01L2224/40499 ,  H01L2224/8546 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/01074 ,  H01L2224/3716 ,  H01L2224/37124 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/00 ,  H01L2924/207 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2224/48647 ,  H01L2224/4866 ,  H01L2224/48824 ,  H01L2224/4886 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/48724 ,  H01L2224/4876 ,  H01L2924/013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00013 ,  H01L2924/2076

摘要： An electric power semiconductor device includes a heat transfer plate (4) to which a heat radiation material (9) is adhered through an insulating layer (8), a printed wire board (3) that is disposed in such a way as to be spaced a predetermined gap apart from the heat transfer plate (4) and in the vicinity of an electrode strip (32) formed on the outer side of which, an opening portion (3a) is provided, a n electric power semiconductor element (2) that is disposed between the heat transfer plate (4) and the printed wire board (3) and whose rear side is adhered to the heat transfer plate (4), and a wiring member (5), one end of which is bonded to a first bonding portion of a main power electrode (21C) formed on the front side of the electric power semiconductor element (2) and the other end of which is bonded to a second bonding portion (32p); at least part of the second bonding portion (32p) is included in a space that extends from the main power electrode (21C) to the printed wire board (3) in the vertical direction, and the first bonding portion is included in a space that extends from the opening portion (3a) in the vertical direction.

摘要翻译： 本发明提供一种电力用半导体装置，其特征在于，具有：通过绝缘层（8）粘接有散热材料（9）的传热板（4）;以隔开间隔配置的印刷电路板（3） 与传热板（4）隔开预定的间隙并在形成于其外侧的电极条（32）附近设置开口部分（3a）;电功率半导体元件（2），该电功率半导体元件 （4）和印刷线路板（3）之间并且其后侧粘附到传热板（4）的布线构件（5），布线构件（5）的一端接合到第一接合件 形成于所述电力用半导体元件（2）的表面侧且另一端与第二接合部（32p）接合的主电极（21C）的一部分; 所述第二接合部（32p）的至少一部分包含在从所述主电极（21C）向所述印刷电路板（3）的铅直方向延伸的空间内，所述第一接合部包含在 从开口部分（3a）沿垂直方向延伸。

公开(公告)号：EP2783391A1

公开(公告)日：2014-10-01

申请号：EP12797791.6

申请日：2012-11-20

申请人： Robert Bosch GmbH

发明人： SUESKE, Erik ,  GEINITZ, Eckart ,  BRAUN, Gerhard

IPC分类号： H01L21/60 ,  H01L23/48 ,  H01L23/495

CPC分类号： H01L23/49838 ,  H01L21/768 ,  H01L23/49513 ,  H01L23/49524 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37011 ,  H01L2224/37012 ,  H01L2224/371 ,  H01L2224/4007 ,  H01L2224/40245 ,  H01L2224/49171 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/07025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention relates to a method for making contact with a semiconductor (10), and to a contact arrangement (1) for a semiconductor (10), wherein the semiconductor (10) is areally connected to a first contact partner (20) at at least one first area by the formation of a first soldering layer (30) having a predefined thickness. According to the invention, a polyimide layer (14) is applied as delimiting means on the semiconductor (10), said polyimide layer predefining the dimensions and/or the form of at least one soldering area (12) of the semiconductor (10).

公开(公告)号：EP3082243A4

公开(公告)日：2017-12-06

申请号：EP14870416

申请日：2014-12-12

申请人： HITACHI POWER SEMICONDUCTOR DEVICE LTD

发明人： ISHIMARU TETSUYA ,  MORI MUTSUHIRO ,  SAKANO JUNICHI ,  ONDA KOHHEI

IPC分类号： H01L23/051 ,  H01L23/31 ,  H01L23/367 ,  H01L23/488 ,  H01L23/544 ,  H01L25/07 ,  H02M7/219

CPC分类号： H01L29/7808 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/367 ,  H01L23/373 ,  H01L23/544 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/66 ,  H01L24/69 ,  H01L24/73 ,  H01L24/75 ,  H01L24/78 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L29/7805 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/40499 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48499 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/75754 ,  H01L2224/78753 ,  H01L2224/78802 ,  H01L2224/83101 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/9221 ,  H01L2924/00011 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H02K11/00 ,  H02K11/046 ,  H02K19/36 ,  H02M1/08 ,  H02M7/003 ,  H02M7/217 ,  H02M7/219 ,  H02M2001/0006 ,  H02P9/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2224/84

摘要： The semiconductor device (S1) has a first external electrode (101) having an outer peripheral section (101s), which has a circular shape in top plan view and which is to be attached to an alternator (Ot). On the first external electrode (101) there mounted: a MOSFET chip (103); a control circuitry (104) to which voltages at or a current flowing between a first main terminal (103d) and a second main terminal (103s) of the MOSFET chip (103) is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate (103g) of the MOSFET chip(103); and a capacitor (105) for providing a power supply to the control circuitry (104). The semiconductor device further has a second external electrode (107) disposed opposite to the first external electrode with respect to the MOSFET chip (103). An electrical connection is made between the first main terminal (103d) of the MOSFET chip (103) and the first external electrode (101), and between the second main terminal (103s) of the MOSFET chip (103) and the second external electrode (107).

公开(公告)号：EP2889902A4

公开(公告)日：2016-05-04

申请号：EP13832786

申请日：2013-08-09

申请人： MITSUBISHI ELECTRIC CORP

发明人： FUJINO JUNJI ,  YONEDA YUTAKA ,  ONISHI YOSHITAKA ,  SUGAWARA MASAFUMI

IPC分类号： H01L23/49 ,  H01L23/13 ,  H01L23/373 ,  H01L23/492 ,  H01L25/07 ,  H01L25/18 ,  H05K1/02 ,  H05K7/20

CPC分类号： H05K1/0203 ,  H01L23/13 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/492 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/4005 ,  H01L2224/40105 ,  H01L2224/4024 ,  H01L2224/4118 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83801 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/16152 ,  H01L2924/16172 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/92252 ,  H01L2224/85 ,  H01L2224/40499 ,  H01L2224/8546 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/01074 ,  H01L2224/3716 ,  H01L2224/37124 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/00 ,  H01L2924/207 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2224/48647 ,  H01L2224/4866 ,  H01L2224/48824 ,  H01L2224/4886 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/48724 ,  H01L2224/4876 ,  H01L2924/013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00013 ,  H01L2924/2076

公开(公告)号：EP2779244A2

公开(公告)日：2014-09-17

申请号：EP14158995.2

申请日：2014-03-11

申请人： Semiconductor Components Industries, LLC

发明人： Salih, Ali ,  Liu, Chin-Li ,  Grivna, Gordon

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L23/5226 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/4824 ,  H01L23/49827 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/84 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2221/68327 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/04034 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/37187 ,  H01L2224/3719 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37647 ,  H01L2224/37655 ,  H01L2224/37664 ,  H01L2224/40499 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/07811 ,  H01L2224/45099

摘要： In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.

摘要翻译： 在一个实施例中，形成HEMT器件的方法可以包括将导体或多个导体电镀到覆盖在HEMT器件的多个载流电极上的绝缘体上。 该方法还可以包括将连接器附接到导体上或者将多个连接器附接到多个导体上。

公开(公告)号：EP3413344A2

公开(公告)日：2018-12-12

申请号：EP18171767.9

申请日：2018-05-11

申请人： HE System Electronic GmbH & Co. KG

发明人： Münch, Dagmar ,  Reulein, Timo ,  Kastner, Jürgen ,  Fuchs, Martin ,  Römisch, Maximilian ,  Pröll, Peter

IPC分类号： H01L23/34 ,  H01L23/488 ,  H01L25/07

CPC分类号： H01L24/41 ,  H01L23/34 ,  H01L23/495 ,  H01L24/37 ,  H01L24/40 ,  H01L25/072 ,  H01L2224/32227 ,  H01L2224/3701 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/40145 ,  H01L2224/40147 ,  H01L2224/40227 ,  H01L2224/4103 ,  H01L2224/41052 ,  H01L2224/73263 ,  H01L2924/19104 ,  H01L2924/00012

摘要： Die zu Grunde liegende Erfindung betrifft insbesondere ein Verbindungselement (1), insbesondere Bondelement, umfassend
- einen ersten Verbindungsbereich (11), insbesondere Verbindungsfläche, zur Ausbildung und/oder Herstellung einer insbesondere elektrisch leitenden Verbindung und/oder mechanischen Kopplung und/oder Fixierung eines ersten Bauelements (12), insbesondere eines Leistungshalbleiter-Bauelements, und des Verbindungselements (1), über den/die das Verbindungselement (1) mit dem ersten Bauelement (12) verbunden oder verbindbar ist,
- einen zweiten Verbindungsbereich (13), insbesondere Verbindungsfläche, zur insbesondere elektrisch leitenden Fixierung und/oder Anbindung und/oder Anbringung und/oder Kontaktierung des Verbindungselements an ein zweites Bauelement (14), insbesondere einen ersten Schaltungsträger oder eine Leiterbahn, über den/die das Verbindungselement (1) mit dem zweiten Bauelement (14) verbunden oder verbindbar ist,
- einen dritten Verbindungsbereich (15), insbesondere Verbindungsfläche, zur insbesondere elektrisch leitenden Anbringung und/oder Anbindung und/oder Fixierung eines dritten Bauelements (2), insbesondere eines zweiten Schaltungsträgers, und/oder wenigstens eines Kontaktierungselements (20, 30) an das Verbindungselement (1), über den/die das Verbindungselement (1) mit dem dritten Bauelement (2) verbunden oder verbindbar ist,
sowie eine
Anordnung, insbesondere Schaltungsanordnung.

公开(公告)号：EP3308396A1

公开(公告)日：2018-04-18

申请号：EP16807990.3

申请日：2016-05-11

申请人： Vishay General Semiconductor LLC

发明人： DING, Hui-Ying ,  WANG, Pengnian ,  YU, Tao ,  LIU, Jun-Feng ,  BAI, Jun-Kai ,  PENG, Chih-Ping

IPC分类号： H01L23/495 ,  H01L23/433 ,  H01L23/31 ,  H01L23/64 ,  H01L33/48

CPC分类号： H01L23/49575 ,  H01L21/52 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49513 ,  H01L23/49517 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L2021/6027 ,  H01L2021/60277 ,  H01L2224/04026 ,  H01L2224/05644 ,  H01L2224/291 ,  H01L2224/32145 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/37166 ,  H01L2224/40105 ,  H01L2224/40245 ,  H01L2224/40499 ,  H01L2224/73263 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83466 ,  H01L2224/83815 ,  H01L2224/84345 ,  H01L2224/84385 ,  H01L2224/92246 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor assembly includes a semiconductor die comprising lower and upper electrical contacts. A lead frame having a lower die pad is electrically and mechanically connected to the lower electrical contact of the die. An upper conductive member has a first portion electrically and mechanically connected to the upper electrical contact of the die. A lead terminal has a surface portion electrically and mechanically connected to a second portion of the conductive member. The surface portion of the lead terminal and/or the second portion of the conductive member has a series of grooves disposed therein. Packaging material encapsulates the semiconductor die, at least a portion of the lead frame, at least a portion of the upper conducive member and at least a portion of the lead terminal.

公开(公告)号：EP3234988A1

公开(公告)日：2017-10-25

申请号：EP15870960.0

申请日：2015-12-16

申请人： Alpha Assembly Solutions Inc. ,  Advanced Packaging Center BV

发明人： KHASELEV, Oscar ,  BOSCHMAN, Eef

IPC分类号： H01L21/324

CPC分类号： H01L24/84 ,  H01L21/4825 ,  H01L23/49524 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/40105 ,  H01L2224/40245 ,  H01L2224/40499 ,  H01L2224/73213 ,  H01L2224/73263 ,  H01L2224/83001 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/83907 ,  H01L2224/83986 ,  H01L2224/84001 ,  H01L2224/84203 ,  H01L2224/8484 ,  H01L2224/84986 ,  H01L2224/9205 ,  H01L2224/9221 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/84 ,  H01L2924/01047

摘要： A method of die and clip attachment includes providing a clip, a die and a substrate, laminating a sinterable silver film on the clip and the die, depositing a tack agent on the substrate, placing the die on the substrate, placing the clip on the die and the substrate to create a substrate, die and clip package, lead and sintering the substrate, die and clip package.

摘要翻译： 一种模具和夹子附着的方法包括提供夹子，模子和基底，在夹子和模子上层压可烧结银膜，在基底上沉积粘性剂，将模子放置在基底上，将夹子放置在 管芯和基板以形成基板，管芯和夹子封装，并烧结基板，管芯和夹子封装。