摘要:
The disclosure relates to a dual-interface integrated circuit (IC) card. Embodiments disclosed include a dual-interface card (100) comprising: a card body (122) containing an antenna (120), the antenna having first and second antenna connections; and a dual-interface integrated circuit card module (150) comprising: a substrate (104) having first and second opposing surfaces; a contact area (102) on the first surface of the substrate (104), the contact area (102) comprising a plurality of contact pads (108) and first and second routing connections (106) each having a first end and a second end; an integrated circuit (110) on the second surface of the substrate (104); electrical connections through the substrate (104) connecting the integrated circuit (110) to the plurality of contact pads (108) and to the first end of each of the first and second routing connections (106); and first and second antenna connectors (118) disposed in respective first and second holes (103) in the substrate (104) and in electrical contact with the second end of the respective first and second routing connections, wherein the first and second antenna connectors (118) of the card module are electrically connected to the first and second antenna connections of the card body (122).
摘要:
Apparatuses relating generally to a microelectronic package having protection from interference are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface and has a ground plane. A first microelectronic device is coupled to the upper surface of the substrate. Wire bond wires are coupled to the ground plane for conducting the interference thereto and extending away from the upper surface of the substrate. A first portion of the wire bond wires is positioned to provide a shielding region for the first microelectronic device with respect to the interference. A second portion of the wire bond wires is not positioned to provide the shielding region. A second microelectronic device is coupled to the substrate and located outside of the shielding region. A conductive surface is over the first portion of the wire bond wires for covering the shielding region.
摘要:
A leadframe package includes a die pad with four unitary, outwardly extending slender bars; a plurality of leads arranged along periphery of the die pad; a separate pad segment separated from the die pad and isolated from the plurality of leads; a semiconductor die mounted on an upper side of the die pad, wherein the semiconductor die contains first bond pads wire-bonded to respective the plurality of leads and a second bond pad wire-bonded to the separate pad segment; and a molding compound encapsulating the semiconductor die, the upper side of the die pad, the first suspended pad segment and inner portions of the plurality of leads.
摘要:
A cavity package is disclosed comprising a metal leadframe, a metal ring connected to the metal leadframe, a plastic body molded to the metal leadframe forming a substrate cavity including an exposed die attach pad of the leadframe for affixing a semiconductor device, exposed lead fingers of the leadframe for wire bonding to the semiconductor device and an external circuit, and an exposed top surface of the metal ring, and a metal cap for closing and encapsulating the substrate cavity. The metal ring is integrated into the pre-molded cavity leadframe for providing an electrical ground path from the metal cap to the die attach pad and permitting attachment of the metal cap to the pre-molded leadframe using solder reflow.
摘要:
A semiconductor device (20, 24, 29, 32, 35, 38) includes a die pad (6), a wide gap semiconductor chip (SiC or GaN) (1) mounted on the die pad (6), a porous first sintered Ag layer (16) bonding the die pad (6) and the chip (1), and a reinforcing resin portion (17) covering a surface of the first sintered Ag layer (16) and a part of a side surface of the chip (1) and formed in a fillet shape. The semiconductor device (20, 24, 29, 32, 35, 38) further includes electrodes (1g, 1h, 2, 3, 4) on its main (1a) and back (1b) surfaces, the electrodes (1g, 1h, 2, 3, 4) being electrically connected to leads (7, 9, 11, 39), wherein the electrical connection at the front side is a wire (18, 19, 25, 26) connection and the electrical connection at the back side is the first sintered Ag layer (16). A porous second sintered Ag layer (36) or a second resin portion (30) reinforces the wire bonding portion on the electrode (1g, 2, 3). The semiconductor device (20, 24, 29, 32, 35, 38) further includes a sealing body (third resin) (14) which covers the chip (1), the first sintered Ag layer (16), and a part of the die pad (6).
摘要:
A semiconductor device is configured to provide current and voltage isolation inside an integrated circuit package. The semiconductor device includes first and second semiconductor dies, a first isolating block positioned on the first semiconductor die, and a second isolating block positioned on the second semiconductor die. The semiconductor device also includes a first interconnect coil having a plurality of wires connecting the first semiconductor die to the second isolating block, and a second interconnect coil having a plurality of wires connecting the second semiconductor die to the first isolating block.
摘要:
The invention relates to a method for wire bonding and a method for the production of a bonding connection. A bonding point (2, 20) is heated by means of a laser beam (4) originating from a laser. The arrangement (1) comprises a wedge-wedge-ultrasound-bonding device with a bonding needle (5), a copper or aluminium bonding wire guide (7) and a copper or aluminium wire (8) for a wedge-wedge-ultrasound-bonding method and at least one of the bonding points (2, 20) displays a hard metal covering (6).
摘要:
By forming a flat member 10 forming a conductive film 11 having substantially same pattern with a second bonding pad 17, a wiring 18, and an electrode 19 for taking out , or forming a flat member 30 half-etched through the conductive film 11, it is possible to manufacture a semiconductor device 23 of BGA structure using a back process of a semiconductor maker.
摘要:
A device includes a chip (111), and a resin package (112, 151, 314) sealing the chip, the resin package having resin projections (117, 154, 318) located on a mount-side surface of the resin package. Metallic films (113, 155, 315) are respectively provided to the resin projections. Connecting parts (118, 101, 163, 245, 313, 341, 342) electrically connect electrode pads of the chip and the metallic films.