SUBSTRATE WITH BUILT-IN COMPONENT, AND MANUFACTURING METHOD FOR SAME
    1.
    发明公开
    SUBSTRATE WITH BUILT-IN COMPONENT, AND MANUFACTURING METHOD FOR SAME 审中-公开
    亚特兰大EINER EINGEBAUTEN KOMPONENTE UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号:EP2958408A1

    公开(公告)日:2015-12-23

    申请号:EP13874923.9

    申请日:2013-02-12

    IPC分类号: H05K3/46

    摘要: A device embedded substrate (15) includes an insulating layer (12) including an insulating resin material, an electric or electronic device (4) embedded in the insulating layer (12), a metal film (9) coating at least one face of the device (4), and a roughened portion (10) formed by roughening at least part of the surface of the metal film (9). Preferably, the device embedded substrate (15) further includes: a conductive layer (6) pattern-formed at least on a bottom face (7), the bottom face (7) being one face of the insulating layer (12); and a bonding agent (3) made of a material different from the insulating layer (12) and joining the conductive layer (6) and a mounting face (8), the mounting face (8) being one face of the device (4). The metal film (9) is formed only on a face opposite to the mounting face (8), and the bonding agent (3) has a thickness smaller than a thickness from the metal film (9) to a top face (11), the top face (11) being the other face of the insulating layer (12).

    摘要翻译: 一种器件嵌入式衬底(15)包括绝缘层(12),其包括绝缘树脂材料,嵌入在绝缘层(12)中的电子或电子器件(4),金属膜(9) 以及通过使金属膜(9)的至少一部分表面粗糙化而形成的粗糙部(10)。 优选地,所述器件嵌入式衬底(15)还包括:至少在底面(7)上图案形成的导电层(6),所述底面(7)是所述绝缘层(12)的一个面; 以及由与所述绝缘层(12)不同的材料制成并且将所述导电层(6)和安装面(8)接合的接合剂(3),所述安装面(8)是所述装置(4)的一个面, 。 金属膜(9)仅形成在与安装面(8)相反的面上,粘接剂(3)的厚度比从金属膜(9)到顶面(11)的厚度小, 所述顶面(11)是所述绝缘层(12)的另一面。

    CONDUCTOR CONNECTION STRUCTURE, METHOD FOR PRODUCING SAME, CONDUCTIVE COMPOSITION, AND ELECTRONIC COMPONENT MODULE
    3.
    发明公开
    CONDUCTOR CONNECTION STRUCTURE, METHOD FOR PRODUCING SAME, CONDUCTIVE COMPOSITION, AND ELECTRONIC COMPONENT MODULE 审中-公开
    导体连接结构,生产该导体的方法,导电组合物和电子组件模块

    公开(公告)号:EP3188314A1

    公开(公告)日:2017-07-05

    申请号:EP15835308.6

    申请日:2015-08-18

    摘要: To provide a connection structure (10) including two conductors (21, 31) and a copper connection (11) electrically connecting the conductors. The connection (11) is made mainly of copper. The connection (11) has a plurality of voids. The connection (11) contains an organosilicon compound in the voids. The connection preferably has a microstructure including an aggregate of a plurality of particles that are fused and bonded to each other to form a neck therebetween. Preferably, the connection has a microstructure including a plurality of large-diameter copper particles having a relatively large diameter and small-diameter copper particles having a smaller diameter than the large-diameter copper particles, the large-diameter copper particles each being fused and bonded to the small-diameter copper particles, the small-diameter copper particles being fused and bonded to each other, and a plurality of the small-diameter copper particles being located around the large-diameter copper particle.

    摘要翻译: 为了提供包括两个导体(21,31)和电连接导体的铜连接(11)的连接结构(10)。 连接(11)主要由铜制成。 连接(11)具有多个空隙。 连接(11)在空隙中含有有机硅化合物。 该连接部优选具有微结构,该微结构包括彼此融合并结合以在其间形成颈部的多个颗粒的聚集体。 优选地,所述连接部具有微结构,所述微结构包括多个具有相对较大直径的大直径铜颗粒和具有比所述大直径铜颗粒小的直径的小直径铜颗粒,所述大直径铜颗粒各自熔合并结合 小直径铜粒子彼此融合而接合,多个小直径铜粒子位于大直径铜粒子的周围。

    SUBSTRATE WITH BUILT-IN COMPONENT, AND MANUFACTURING METHOD FOR SAME
    5.
    发明公开
    SUBSTRATE WITH BUILT-IN COMPONENT, AND MANUFACTURING METHOD FOR SAME 审中-公开
    随着对生产的内置组件和处理基底

    公开(公告)号:EP2958408A4

    公开(公告)日:2016-11-30

    申请号:EP13874923

    申请日:2013-02-12

    IPC分类号: H05K3/46

    摘要: A device embedded substrate (15) includes an insulating layer (12) including an insulating resin material, an electric or electronic device (4) embedded in the insulating layer (12), a metal film (9) coating at least one face of the device (4), and a roughened portion (10) formed by roughening at least part of the surface of the metal film (9). Preferably, the device embedded substrate (15) further includes: a conductive layer (6) pattern-formed at least on a bottom face (7), the bottom face (7) being one face of the insulating layer (12); and a bonding agent (3) made of a material different from the insulating layer (12) and joining the conductive layer (6) and a mounting face (8), the mounting face (8) being one face of the device (4). The metal film (9) is formed only on a face opposite to the mounting face (8), and the bonding agent (3) has a thickness smaller than a thickness from the metal film (9) to a top face (11), the top face (11) being the other face of the insulating layer (12).