公开(公告)号：EP3646373A1

公开(公告)日：2020-05-06

申请号：EP18824495.8

申请日：2018-06-28

申请人： Texas Instruments Incorporated

发明人： FORGHANI-ZADEH, H., Pooya ,  KONNAIL, George, Vincent ,  OPOCZYNSKI, Christopher, Adam

IPC分类号： H01L21/70 ,  H03K19/00

公开(公告)号：EP2256797B1

公开(公告)日：2019-11-27

申请号：EP10163203.2

申请日：2010-05-19

申请人： Xerox Corporation

发明人： Wu, Yiliang ,  Liu, Ping ,  Hu, Nan-Xing

IPC分类号： H01L21/70 ,  C08L101/00

公开(公告)号：EP2919265B1

公开(公告)日：2019-06-26

申请号：EP15155491.2

申请日：2015-02-18

申请人： MediaTek Inc.

发明人： Hsu, Wen-Sung ,  Yu, Ta-Jen

IPC分类号： H01L23/66 ,  H01L23/64 ,  H01L25/00 ,  H05K1/02 ,  H05K3/28 ,  H01L23/538 ,  H01F17/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/70 ,  H01L23/498 ,  H01L23/00 ,  H05K1/16

公开(公告)号：EP3442006A3

公开(公告)日：2019-02-20

申请号：EP18196492.5

申请日：2011-01-25

申请人： EV Group E. Thallner GmbH

发明人： Plach, Thomas ,  HINGERL, Kurt ,  WIMPLINGER, Markus

IPC分类号： H01L21/18 ,  H01L21/20 ,  H01L21/762 ,  H01L21/70 ,  H01L23/00

摘要： Die vorliegende Erfindung betrifft ein Verfahren Verfahren zum Bonden einer ersten Kontaktfläche (3) eines ersten Substrats (1) mit einer zweiten Kontaktfläche (4) eines zweiten Substrats (2) mit folgenden Schritten, insbesondere folgendem Ablauf:
- Ausbildung eines Reservoirs (5) in einer Oberflächenschicht (6) an der ersten Kontaktfläche (3) durch Beaufschlagung der ersten Kontaktfläche (3) mit N2-Gas und/oder O 2 -Gas und/oder Ar-Gas und/oder Formiergas, insbesondere bestehend aus 95% Ar und 5% H 2 ,
- zumindest teilweises Auffüllen des Reservoirs (5) mit einem ersten Edukt oder einer ersten Gruppe von Edukten,
- Kontaktieren der ersten Kontaktfläche (3) mit der zweiten Kontaktfläche (4) zur Ausbildung einer Pre-Bond-Verbindung,
- Ausbildung eines permanenten Bonds zwischen der ersten und zweiten Kontaktfläche (3, 4), zumindest teilweise verstärkt durch Reaktion des ersten Edukts mit einem in einer Reaktionsschicht (7) des zweiten Substrats enthaltenen zweiten Edukt.

公开(公告)号：EP3024014B1

公开(公告)日：2018-11-28

申请号：EP15197291.6

申请日：2011-01-25

申请人： EV Group E. Thallner GmbH

发明人： PLACH, Thomas ,  HINGERL, Kurt ,  WIMPLINGER, Markus ,  FLÖTGEN, Christoph

IPC分类号： H01L21/18 ,  H01L21/20 ,  H01L21/762 ,  H01L21/70 ,  H01L23/00

CPC分类号： H01L24/83 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/70 ,  H01L21/76251 ,  H01L24/80 ,  H01L2224/80907 ,  H01L2224/83009 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/01008 ,  H01L2924/01018 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106

公开(公告)号：EP2984912A4

公开(公告)日：2017-01-25

申请号：EP14782216

申请日：2014-04-11

申请人： UNIV ILLINOIS

发明人： ROGERS JOHN A ,  LEE CHI HWAN ,  YIN LAN ,  HUANG XIAN ,  LEAL CECILIA MARIA DAS NEVES BARBOSA ,  HARBURG DANIEL VINCENT

IPC分类号： H05K7/00 ,  A61B5/00 ,  A61M5/44 ,  G06K19/077 ,  H01L21/70 ,  H01L23/00 ,  H01L23/06 ,  H05K1/02 ,  H05K1/03 ,  H05K3/22 ,  H05K3/28

CPC分类号： H05K1/185 ,  A61B5/686 ,  A61B2562/125 ,  A61M5/44 ,  G06K19/0775 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/56 ,  H01L23/291 ,  H01L23/3121 ,  H01L23/3192 ,  H01L23/49894 ,  H01L25/0655 ,  H01L2924/0002 ,  H05K1/0275 ,  H05K1/0286 ,  H05K1/0306 ,  H05K3/22 ,  H05K3/285 ,  H05K3/287 ,  H05K3/288 ,  H05K5/069 ,  H05K13/0023 ,  H05K2201/10151 ,  H05K2201/10196 ,  H05K2201/10212 ,  H05K2203/0271 ,  H05K2203/0292 ,  H05K2203/0769 ,  H05K2203/0776 ,  H05K2203/0786 ,  H05K2203/17 ,  H05K2203/175 ,  H05K2203/178 ,  Y10T29/49124 ,  Y10T137/0318 ,  Y10T428/239 ,  H01L2924/00

摘要： The invention provides transient devices, including active and passive devices that physically, chemically and/or electrically transform upon application of at least one internal and/or external stimulus. Incorporation of degradable device components, degradable substrates and/or degradable encapsulating materials each having a programmable, controllable and/or selectable degradation rate provides a means of transforming the device. In some embodiments, for example, transient devices of the invention combine degradable high performance single crystalline inorganic materials with selectively removable substrates and/or encapsulants.

公开(公告)号：EP2591499A4

公开(公告)日：2016-08-10

申请号：EP11803926

申请日：2011-05-04

申请人： RAYTHEON CO

发明人： PFLIBSEN KENT P ,  VANCE LEONARD D ,  MCCOMAS BRIAN K

IPC分类号： H01L21/70 ,  H01L21/8234 ,  H01L29/02 ,  H04N5/335 ,  H04N5/345 ,  H04N5/372 ,  H04N5/374

CPC分类号： H04N5/3743 ,  H01L27/14634 ,  H01L27/1485 ,  H01L27/14856 ,  H04N5/335 ,  H04N5/3454 ,  H04N5/37206

公开(公告)号：EP2855744A1

公开(公告)日：2015-04-08

申请号：EP13739796.4

申请日：2013-06-03

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： SIMONATO, Jean-Pierre ,  CARELLA, Alexandre ,  CELLE, Caroline

IPC分类号： C30B29/60 ,  C30B29/62 ,  C30B33/10 ,  B82B1/00 ,  B82B3/00 ,  H01L21/02 ,  H01L21/70

CPC分类号： C23F1/00 ,  B82Y10/00 ,  B82Y40/00 ,  C30B29/605 ,  C30B29/62 ,  C30B33/10 ,  H01B1/02 ,  H01B13/00 ,  H01L29/0673 ,  H01L29/413

摘要： The invention relates to a process for improving the electrical and optical performance of a transparent electrically conductive material comprising silver nanowires. The invention also relates to a process for manufacturing a film made of a transparent electrically conductive material, such as a transparent electrode, a transparent heating film, or a film for electromagnetic shielding. The process of the invention comprises the following steps: a) a step of bringing silver nanowires into contact with an acid solution, this solution having a pH lower than 7, preferably lower than 3; and b) a step of eliminating the acid. The field of application of the invention is in particular the field of optoelectronics.

公开(公告)号：EP2381478B1

公开(公告)日：2013-08-21

申请号：EP10011541.9

申请日：1999-02-03

申请人： Invensas Corporation

发明人： Badehi, Avner

IPC分类号： H01L27/146 ,  H01L21/70 ,  H01L23/31 ,  H01L25/10 ,  H01L31/0232 ,  H01L27/15 ,  H01L31/0203

CPC分类号： H01L31/02327 ,  H01L21/56 ,  H01L21/82 ,  H01L23/3114 ,  H01L24/02 ,  H01L24/97 ,  H01L25/105 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/15 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/125 ,  H01L31/186 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/483 ,  H01L33/486 ,  H01L33/52 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00

摘要： A method of producing packaged optronic integrated circuit devices comprises (a) providing a transparent protective layer (26) overlying a first surface of a semiconductor wafer (20) including a plurality of dies; (b) forming notches extending into the wafer (20) from a second surface of the wafer (20), the notches being disposed at dice lanes between the dies; (c) providing an insulating layer (42) overlying the second surface of the wafer (20) and having an outer surface facing away from the wafer (20); (d) forming contacts electrically connected to the dies, the contacts extending outo the outer surface of the insulating layer (42); and then severing the transparent protective layer (26) to separate the dies from one another.

公开(公告)号：EP2454397A1

公开(公告)日：2012-05-23

申请号：EP09847439.8

申请日：2009-07-16

申请人： LAM Research Corporation

发明人： KOLICS, Artur

IPC分类号： C25D21/12 ,  H01L21/70

CPC分类号： H01L21/02697 ,  C09D5/24 ,  C23C18/1601 ,  C23C18/1617 ,  C23C18/34 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H05K3/244

摘要： One embodiment of the present invention is a method of electroless deposition of cap layers for fabricating an integrated circuit. The method includes controlling the composition of an electroless deposition bath so as to substantially maintain the electroless deposition properties of the bath. Other embodiments of the present invention include electroless deposition solutions. Still another embodiment of the present invention is a composition used to recondition an electroless deposition bath.