Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a low temperature calcinated substrate where a capacitor of a high capacity composed of high permittivity ceramic is built in. SOLUTION: The method for manufacturing a capacitor built-in type LTCC substrate including a step of manufacturing a capacitor by calcinating a laminate where at least one high permittivity ceramic sheet is contained, a step of providing a plurality of low temperature calcination green sheets where a conductive pattern and/or a conductive via hole are formed, and a step of calcinating the LTCC laminate where the capacitor is built in a step of forming a LTCC laminate by laminating a plurality of the low temperature calcination green sheets so as to allow the capacitor connected to the adjacent conductive pattern or the conductive via hole in the green sheet to be built in that may be usefully applied to a multiform capacitor such as laminated chip capacitor structure or capacitor layer structure is provided. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor chip structure in which an external connection bump of a semiconductor chip performs position-alignment with a via which is formed in an external circuit layer of a base substrate, and to provide a method of manufacturing the same. SOLUTION: The semiconductor chip 10 is provided which includes an external connection bump 300 which is formed on one face of the semiconductor chip 10 to draw out a signal of an electronic circuit integrated in the semiconductor chip 10 and an alignment mark 500 which is formed on the other face of the semiconductor chip 10 and has position information of the external connection bump 300. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a multiple output transformer efficiently generating multiple outputs in accordance with electric characteristics using one transformer. SOLUTION: The multiple output transformer comprises: a primary bobbin 10 provided with one primary winding part 13 having one input terminal 17a and one ground terminal 17b; a secondary bobbin 11 provided with n (n: positive integer) secondary winding parts 14 having either of two output terminals 18a and 18b, and either of two output terminals 18c and 18d, respectively; a primary coil 15 wound around the one primary winding part 13; a secondary coil 16 wound around each of the n secondary winding parts 14; and a pair of cores 12 to be inserted respectively into an insertion hole provided inside the primary bobbin 10 and the secondary bobbin 11 so that the primary bobbin 10 and the secondary bobbin 11 are separated from each other. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electromagnetic band gap structure and a printed circuit board. SOLUTION: A printed circuit board 100 includes three or more conductive plates; a first stitching via 645 for electrically connecting one conductive plate among the conductive plates with another conductive plate; and a second stitching via 649 for electrically connecting the one conductive plate among the conductive plates with yet another conductive plate. In the first stitching via, a part thereof electrically connects the one conductive plate with another conductive plate via one upper flat plane of one conductive plate, and in the second stitching via part thereof electrically connects the one conductive plate is electrically connected to yet another conductive plate via one lower flat plane of one conductive plate. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a laminated ceramic capacitor capable of preventing a defect problem due to the oxidation of an internal electrode by performing a firing even under a reducing atmosphere in which the partial pressure of oxygen is controlled. SOLUTION: The laminated ceramic capacitor 40 includes: a sintered ceramic main part 41 having cover layers disposed on both faces as outermost layers and a plurality of ceramic layers laminated therebetween; first and second internal electrodes 42a, 42b formed on each of the plurality of ceramic layers and laminated alternatingly sandwiching one layer of the ceramic layers; first and second external electrode 45a, 45b formed on each outer face of the sintered ceramic main part 41 so as to be connected to the first and second internal electrode 42a, 42b; and electrode layers for preventing oxidation 44a, 44b which are formed between the cover layer and the ceramic layer neighboring thereto and do not contribute to an electrostatic capacitance. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a heat dissipating member of an LED lighting device and an LED lighting device using the same. SOLUTION: The LED lighting device 100 includes a printed circuit board 120 with LED chips 110 mounted, and a heat dissipating member 130 fitted at a rear face of the printed circuit board 120. The heat dissipating member 130 includes a heat dissipating pipe 131 perpendicularly fitted from the center of the printed circuit board 120, heat dissipating fins 133 fitted to the printed circuit board 120 at a constant interval so as to surround the heat dissipating pipe, heat dissipating discs 135 fitted at a lower part of the heat dissipating fins 133 and arranged along the heat dissipating pipe 131 at a constant interval, and a heat dissipating member case 137 covering the heat dissipating member. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a cognitive radio communication device and its method for adaptively controlling a sensing reference level in response to transmission power of a transmitter. SOLUTION: This cognitive radio communication device has: a sensing reference level control part for adaptively controlling the sensing reference level in response to transmission power of a secondary transmitter belonging to a secondary network; and a high speed sensing unit for determining whether a received signal exists for a predetermined time section by using the controlled sensing reference level. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a light emitting diode unit capable of reducing the manufacturing cost and the manufacturing time and raising the heat discharging ability by using the heat sink directly adhered to a thermoplastic substrate. SOLUTION: The light emitting diode unit includes the thermoplastic substrate (100), a light emitting diode (110) mounted on one surface of the thermoplastic substrate (100) and a heat sink (120) directly adhered to the other surface of the thermoplastic substrate (100). COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which can minimize damage to a solder bump caused by a difference in thermal expansion coefficient thereby having enhanced reliability and achieves the simplification of a manufacturing process thereby achieving reduction in manufacturing cost and enhancement in productivity. SOLUTION: The semiconductor device is provided which includes: a wafer 110 having an electrode pad 120; an insulation layer 130 that is formed on the wafer 110 and has an exposure hole 131 exposing the electrode pad 120; a redistribution layer 140 that is formed on the exposure hole 131 of the insulation layer 130 and the insulation layer 130 and has one end connected to the electrode pad 120; a conductive post 150 that is formed at the other end of the redistribution layer 140; an encapsulation layer 160 that is formed on the redistribution layer 140 and the insulation layer 130 so that the upper end of the conductive post 150 is exposed; and a solder bump 170 that is formed on the exposed upper portion of the conducive post 150. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a gallium nitride-based light emitting element with high resistance against reverse directional ESD voltage and provide its manufacturing method. SOLUTION: The gallium nitride-based light emitting element includes a substrate; a main GaN-based LED formed in a first region on the substrate and having a first p side electrode and a first n side electrode; and an ESD protecting GaN-based LED formed in a second region of the substrate and having a second p side electrode and a second n side electrode. The first region and the second region are separated from each other by an element separation region. The first p side electrode is connected electrically with the second n side electrode, while the first n side electrode is connected electrically with the second p side electrode. COPYRIGHT: (C)2009,JPO&INPIT