A method of manufacturing a semiconductor device

    公开(公告)号:JP5262533B2

    公开(公告)日:2013-08-14

    申请号:JP2008255007

    申请日:2008-09-30

    IPC分类号: H01L33/36

    摘要: PROBLEM TO BE SOLVED: To simplify a manufacturing process in a semiconductor device manufacturing method for mounting a semiconductor element, having each electrode on both sides, on a circuit board while laying the semiconductor element on its side. SOLUTION: A semiconductor element includes a p-side electrode and a first metal layer with a thickness of 3-20 μm, formed on the p-side electrode, respectively on one side of a conductive substrate while having an n-side electrode and a second metal layer with a thickness of 3-20 μm, formed on the n-side electrode, respectively on the other side of the conductive substrate. A semiconductor device manufacturing method includes: a step of preparing the semiconductor element; a step of placing the semiconductor element on a mounting substrate, formed with a prescribed pattern having a first pad and a second pad, such that the first metal layer is located on the first pad and the second metal layer is located on the second pad; and a step of solid-phase bonding the first metal layer of the semiconductor element, placed on the mounting substrate, and the first pad so as to solid-phase bond the second metal layer and the second pad. COPYRIGHT: (C)2010,JPO&INPIT