公开(公告)号：JP6323775B2

公开(公告)日：2018-05-16

申请号：JP2014023478

申请日：2014-02-10

Applicant: パナソニックIPマネジメント株式会社

Inventor： 松川 容三 ,  金川 直樹 ,  牧田 俊幸

IPC: H01L21/60

CPC classification number: H01L2224/16225 ,  H01L2224/73103 ,  H01L2224/81 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/83192 ,  H01L2924/00012

公开(公告)号：JP5762632B2

公开(公告)日：2015-08-12

申请号：JP2014516395

申请日：2012-06-26

Applicant: ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ,  ROBERT BOSCH GMBH

Inventor： ミヒャエル ギュエノ ,  ミヒャエル ギュンター ,  トーマス ヘアボート

IPC: H01L23/36 ,  H01L21/60

CPC classification number: H01L24/64 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/70 ,  H01L24/83 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/27848 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29012 ,  H01L2224/29015 ,  H01L2224/29023 ,  H01L2224/29036 ,  H01L2224/29139 ,  H01L2224/29298 ,  H01L2224/3003 ,  H01L2224/30051 ,  H01L2224/3012 ,  H01L2224/30142 ,  H01L2224/3016 ,  H01L2224/30181 ,  H01L2224/32014 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/83048 ,  H01L2224/83203 ,  H01L2224/8384 ,  H01L23/3735 ,  H01L24/32 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/07811 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1517 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/3512

公开(公告)号：JPWO2013141091A1

公开(公告)日：2015-08-03

申请号：JP2014506159

申请日：2013-03-12

Applicant: オリンパス株式会社

Inventor： 良章 竹本 ,  良章 竹本 ,  直裕 高澤 ,  直裕 高澤 ,  菊地　広 ,  広 菊地

IPC: H01L25/065 ,  H01L23/02 ,  H01L25/07 ,  H01L25/18

CPC classification number: H01L24/32 ,  H01L21/56 ,  H01L21/561 ,  H01L23/10 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13023 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16148 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/29011 ,  H01L2224/29012 ,  H01L2224/29013 ,  H01L2224/29014 ,  H01L2224/29023 ,  H01L2224/29076 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32148 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/753 ,  H01L2224/81075 ,  H01L2224/8109 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/83075 ,  H01L2224/8309 ,  H01L2224/831 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/8388 ,  H01L2224/83906 ,  H01L2224/83986 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/10253 ,  H01L2924/163 ,  H01L2924/186 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012

Abstract: 積層型半導体装置2は、一方の面10aに第一の電極11、および第一の電極を囲うように立設した第一の壁部17が設けられた第一の基板10と、第一の面20aに第二の電極21、および第二の電極を囲うように立設した第二の壁部27が設けられた第二の基板20とを備え、第一の基板と第二の基板とは、一方の面と第一の面とを対向させ、第一の電極と第二の電極とを接続させるとともに、第一の壁部のうち第一の壁部が立設する先端部と第二の壁部のうち第二の壁部が立設する先端部とを第一の壁部の全周にわたり接続した状態に配置され、第一の基板と第二の基板との間であって第一の壁部および第二の壁部の外側には、第一の壁部の全周にわたり封止部材30が充填されている。

Abstract translation: 堆叠的半导体装置2包括其中设置所述第一壁部17直立，以包围第一电极11，并且在一个表面10a上的第一电极的第一基板10上设置，所述第一 并且其中设置在第二壁部27立设，以包围第二电极21，和第二电极的表面20a上的第二基板20，第一基板和第二基板 由面对所述一个表面和所述第一表面，其中与所述第一电极和所述第二电极，并且所述第一壁部的前端部的第一壁部的第一竖立连接 被设置在第二壁部的前端的第二壁部被竖立设置在被连接在所述第一壁部分的整个圆周，的状态的所述第一基板和所述第二基板之间 在第一壁部的外侧和所述第二壁部分，所述密封构件30被填充在所述第一壁部分的整个圆周上。

公开(公告)号：JP5714026B2

公开(公告)日：2015-05-07

申请号：JP2012546016

申请日：2010-12-11

Applicant: アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ,  ADVANCED MICRO DEVICES INCORPORATED

Inventor： マイケル ゼット. スー

IPC: H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L21/60

CPC classification number: H01L25/0657 ,  H01L21/54 ,  H01L23/055 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/433 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/2747 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/321 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L23/3185 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/16152

公开(公告)号：JP5549190B2

公开(公告)日：2014-07-16

申请号：JP2009263108

申请日：2009-11-18

Applicant: 豊田合成株式会社

Inventor： 聡 和田 ,  実希 守山 ,  浩一 五所野尾

IPC: H01L21/60 ,  H01L33/62

CPC classification number: H01L33/62 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/1131 ,  H01L2224/1132 ,  H01L2224/11505 ,  H01L2224/13005 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/1329 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13364 ,  H01L2224/13369 ,  H01L2224/14154 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2732 ,  H01L2224/27505 ,  H01L2224/29013 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/30154 ,  H01L2224/3201 ,  H01L2224/32057 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/83 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2933/0066 ,  H01L2924/2075 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012 ,  H01L2224/0401

Abstract: A manufacturing method of a mounting part of a semiconductor light emitting element comprising: preparing a semiconductor light emitting element including an electrode which has a surface, and a board which has a surface; forming a plurality of bump material bodies on at least one of the surface of the electrode and the surface of the board by shaping bump material into islands, wherein the bump material is paste in which metal particles are dispersed, a top surface and a bottom surface of the bump material bodies have different areas, and the top surface is practically flat; solidifying the bump material bodies by thermally processing the bump material bodies; and fixing the semiconductor light emitting element and the board through the bumps.

公开(公告)号：JP2012099566A

公开(公告)日：2012-05-24

申请号：JP2010244316

申请日：2010-10-29

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： YAMADA TAKAYUKI ,  IMATAKI TOMOO ,  MARUYAMA TOMOYO ,  SAINOO YASUSHI ,  TSUNEFUKA AKIKO ,  NISHINA TOMOHIRO ,  NAITO SHINSUKE ,  TANAHASHI MASATOMO ,  FUKUDA KOJI

IPC: H01L21/60 ,  H01L31/042

CPC classification number: H01L24/83 ,  H01L24/13 ,  H01L24/16 ,  H01L24/30 ,  H01L24/32 ,  H01L24/81 ,  H01L31/048 ,  H01L31/0516 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/06151 ,  H01L2224/1132 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/14131 ,  H01L2224/14505 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/2732 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/30151 ,  H01L2224/30505 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/8185 ,  H01L2224/83125 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83856 ,  H01L2224/83886 ,  H01L2224/83905 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/07802 ,  Y02E10/50 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/73103 ,  H01L2924/00 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, excellent in productivity, capable of improving stability of mechanical connection between a semiconductor substrate and a wiring board, and capable of improving stability of electrical connection between an electrode of the semiconductor substrate and wiring of the wiring board.SOLUTION: The semiconductor device comprises: a first insulation adhesive disposed between a surface area of a semiconductor substrate between electrodes of different polarities and a surface area of an insulation base material between neighboring wiring; and a second insulation adhesive disposed between the first insulation adhesive and a conductive adhesive. In the manufacturing method to manufacture the semiconductor device, a first insulation adhesive has a property to become a second cured state after becoming a softening state after becoming a first cured state and viscosity of the first insulation adhesive is kept higher than that of the second insulation adhesive until the first insulation adhesive becomes the second cured state.

Abstract translation: 要解决的问题：为了提供一种能够提高半导体基板和布线基板之间的机械连接的稳定性的生产率优异的半导体装置及其制造方法，能够提高半导体基板和布线基板之间的电连接的稳定性 半导体衬底的电极和布线板的布线。 解决方案：半导体器件包括：设置在不同极性的电极之间的半导体衬底的表面区域和相邻布线之间的绝缘基底材料的表面积的第一绝缘粘合剂; 以及设置在第一绝缘粘合剂和导电粘合剂之间的第二绝缘粘合剂。 在制造半导体器件的制造方法中，第一绝缘粘合剂具有在成为第一固化状态之后成为软化状态后成为第二固化状态的性质，并且第一绝缘粘合剂的粘度保持高于第二绝缘体的粘度 粘合剂直到第一绝缘粘合剂变成第二固化状态。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011243689A

公开(公告)日：2011-12-01

申请号：JP2010113271

申请日：2010-05-17

Applicant: Panasonic Corp ,  パナソニック株式会社

Inventor： AOI NOBUO

IPC: H01L27/12 ,  C09J11/04 ,  C09J201/00 ,  H01L21/02 ,  H01L23/52 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

CPC classification number: H01L27/0688 ,  C08K3/04 ,  H01L21/8221 ,  H01L23/295 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/10126 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/1369 ,  H01L2224/16147 ,  H01L2224/27416 ,  H01L2224/27618 ,  H01L2224/29076 ,  H01L2224/29078 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2224/94 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device, with a three-dimensional structure, capable of efficiently radiating heat generated from the semiconductor device, and to provide a method of manufacturing the same.SOLUTION: A first semiconductor substrate 101 and a second semiconductor substrate 111 are bonded by an adhesive 107A. In the first semiconductor substrate 101, a first electrode 104 in which at least of an edge is exposed is provided. Besides, in the second semiconductor substrate 111, a second electrode 114 in which at least of an edge is exposed is provided. The adhesive 107A includes carbon nano-tubes, and is formed in the region excluding the connecting region of the first electrode 104 and the second electrode 114 and its vicinity.

Abstract translation: 解决的问题：提供能够有效地辐射由半导体器件产生的热量的三维结构的半导体器件，并提供其制造方法。 解决方案：第一半导体衬底101和第二半导体衬底111通过粘合剂107A粘合。 在第一半导体衬底101中，设置有至少暴露边缘的第一电极104。 此外，在第二半导体衬底111中，设置有至少暴露边缘的第二电极114。 粘合剂107A包括碳纳米管，并且形成在除了第一电极104和第二电极114的连接区域及其附近的区域中。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP4206631B2

公开(公告)日：2009-01-14

申请号：JP2000311621

申请日：2000-10-12

Applicant: 住友ベークライト株式会社

Inventor： 有史 坂本

IPC: C08L63/00 ,  C08G59/50 ,  C08K5/41 ,  C08K7/18 ,  C08L101/00 ,  H01L21/56 ,  H01L21/60 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L2224/16 ,  H01L2224/29007 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81907 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2924/0102 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To provide a resin composition for thermosetting liquid sealing which enables production of a semiconductor device from a semiconductor element at a low cost and without generation of voids, and an assembling technique of the semiconductor element for the vamp-attached semiconductor element. SOLUTION: A resin composition for thermosetting liquid sealing wherein (1) a spherical inorganic filler has 0.5-12 μm of the average particle size and not more than 20 μm of the maximum particle size, (2) an epoxy resin has not less than 200 for epoxy equivalents and contains the epoxy group having not less than two functions, (3) a thixo ratio (a viscosity ratio at 0.5 rpm and 2.5 rpm by a viscometer) of the resin composition for thermosetting liquid sealing containing diaminodiphenylsulfone is 1 to 2.

公开(公告)号：JP2008135481A

公开(公告)日：2008-06-12

申请号：JP2006319238

申请日：2006-11-27

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： UEDA MICHIHIKO ,  SANAGAWA YOSHIHARU ,  HIRATA MASAYA ,  SATO MAKOTO ,  SUMI SADAYUKI

IPC: H01L21/60

CPC classification number: H01L24/81 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To provide an electronic device of which conduction resistance between a board-side electrode and a part-side electrode is smaller than that in the conventional structure, and to provide its manufacturing method.
SOLUTION: The electronic device is formed by connecting a board-side electrode 2 formed in a mounting board 1 and a part-side electrode 4 formed in an electronic part 3 and by mounting the electronic part 3 in the mounting board 1 in flip chip manner. A solder layer 6 is formed on the part-side electrode 4, and a metal bump 5 that is formed of Au stud bump and penetrates the solder layer 6 and comes into contact with the part-side electrode 4 while connecting the board-side electrode 2 and the part-side electrode is provided on the board-side electrode 2. The part-side electrode 4 is provided with an Ni layer as a deformation prevention layer 4b that is higher in conductivity than the solder layer 6 and higher in hardness than the metal bump 5, on a part-side base electrode layer 4a comprised of an Al layer.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种电路装置，其中板侧电极和部分侧电极之间的导通电阻小于常规结构中的导通电阻，并提供其制造方法。 解决方案：电子设备通过将形成在安装板1中的板侧电极2和形成在电子部件3中的部分侧电极4连接并将电子部件3安装在安装板1中而形成 倒装芯片方式。 焊料层6形成在部分侧电极4上，金属凸块5由Au柱凸块形成并且穿过焊料层6并与部分侧电极4接触，同时连接板侧电极 部分侧电极4设置有Ni层作为变形防止层4b，导电性高于焊料层6，硬度高于 金属凸块5在由Al层组成的部分侧基极层4a上。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP4016557B2

公开(公告)日：2007-12-05

申请号：JP36646199

申请日：1999-12-24

Applicant: 株式会社デンソー

Inventor： 俊夫 園部 ,  誉 小木曽 ,  淳 斎藤 ,  淳平 藤井

IPC: H01L21/60

CPC classification number: H01L2224/27334 ,  H01L2224/29007 ,  H01L2224/29011 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/83192 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To prevent deterioration of productivity, a thermal effect on another loaded component, generation of a void in a resin and unrepairable manufacturing drawback of a BGA/CSP(ball grid array or chip size package) in a mounting structure in which an electronic component is mounted on a substrate via a solder bump. SOLUTION: A resin sheet 5 obtained by sandwiching both sides of a cured thermosetting resin plate 51 with a pair of thermosetting resin films 52 is previously prepared, and the resin sheet 5 is interposed between a BGA/CSP 2 and a substrate 3. At the same time, reflowing and curing of a solder bump 1 are performed with the solder bump 1 brought into contact with a land portion 4. Subsequently, by heating and pressurizing the solder bump 1 at a lower temperature than the melting temperature of the solder bump 1, the solder bump 1 is crushed and each of both the thermosetting resin films 52 is bonded to the BGA/CSP 2 and the substrate 3.