公开(公告)号：US20200083330A1

公开(公告)日：2020-03-12

申请号：US16616780

申请日：2018-04-19

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

发明人： Keisuke FUKADA ,  Naoto ISHIBASHI ,  Akira BANDO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Kazukuni HARA ,  Masami NAITO ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Hirofumi AOKI ,  Toshikazu SUGIURA ,  Katsumi SUZUKI

IPC分类号： H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US20190285503A1

公开(公告)日：2019-09-19

申请号：US16351927

申请日：2019-03-13

申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Hirofumi Takeda

IPC分类号： G01M3/00

摘要： In a canister horizontally installed and housed inside a concrete silo, at least two temperatures out of a temperature TB at a canister bottom portion to be one end portion in a lateral direction in a horizontally-installed attitude, a temperature TSB at a canister side surface lower portion located below a horizontal plane passing through a center of the canister, a temperature TT at a canister lid portion to be the other end portion in the lateral direction, and a temperature TST at a canister side surface upper portion located above the horizontal plane passing through the center of the canister are monitored, and occurrence of leakage of an inert gas inside the canister is detected when there is a change in a temperature difference between the at least two temperatures.

公开(公告)号：US10145754B2

公开(公告)日：2018-12-04

申请号：US15292230

申请日：2016-10-13

申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Hirofumi Takeda

IPC分类号： G21F5/10 ,  G01M3/00 ,  G21F5/12

摘要： A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a bottom portion of a metallic sealed container. A feeding air temperature of external air passing between the metallic sealed container and a concrete-made storage container is also measured. Presence of leakage of inactive gas is determined by comparing the temperatures or by utilizing a physical amount calculated by using the temperatures.

公开(公告)号：US09496345B2

公开(公告)日：2016-11-15

申请号：US14418897

申请日：2013-07-31

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Kazutoshi Kojima ,  Shiyang Ji ,  Tetsuya Miyazawa ,  Hidekazu Tsuchida ,  Koji Nakayama ,  Tetsuro Hemmi ,  Katsunori Asano

IPC分类号： H01L29/15 ,  H01L29/10 ,  H01L29/66 ,  H01L29/16 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02 ,  H01L29/04 ,  H01L29/167 ,  H01L29/739 ,  H01L21/04

CPC分类号： H01L29/1608 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0259 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/046 ,  H01L29/04 ,  H01L29/045 ,  H01L29/167 ,  H01L29/66068 ,  H01L29/7393 ,  H01L29/7395

摘要： The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.

摘要翻译： 本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或 更大 还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。

公开(公告)号：US20150214306A1

公开(公告)日：2015-07-30

申请号：US14418897

申请日：2013-07-31

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Kazutoshi Kojima ,  Shiyang Ji ,  Tetsuya Miyazawa ,  Hidekazu Tsuchida ,  Koji Nakayama ,  Tetsuro Hemmi ,  Katsunori Asano

IPC分类号： H01L29/16 ,  H01L29/04 ,  C30B29/36 ,  H01L21/02 ,  C30B25/20 ,  H01L29/167 ,  H01L29/739

CPC分类号： H01L29/1608 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0259 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/046 ,  H01L29/04 ,  H01L29/045 ,  H01L29/167 ,  H01L29/66068 ,  H01L29/7393 ,  H01L29/7395

摘要： The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.

摘要翻译： 本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或 更大 还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。

公开(公告)号：US20040110641A1

公开(公告)日：2004-06-10

申请号：US10630862

申请日：2003-07-31

申请人： DOWA MINING CO., LTD. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Masahiro Kojima ,  Masakazu Kawahara ,  Michiharu Ichikawa ,  Hiroyuki Kado ,  Masatoyo Shibuya

IPC分类号： H01F006/00

CPC分类号： H01L39/2429 ,  Y10S505/782

摘要： The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.

摘要翻译： 本发明提供了一种Bi2223基厚膜，其在制造过程中间对基底或氧化物超导体厚膜等施加热或机械冲击时不会剥离，以及其制造方法 将具有Bi2212组成的混合比的氧化物超导体糊料1施加到基材3上，干燥，烧制，然后在接近其熔点的温度下烧制，得到部分熔融层4.接下来，将氧化物超导体糊料2 将Bi2223组合物的混合比施加到部分熔融层4上，通过CIP进行干燥，烧制，压缩，然后反复燃烧并压缩预定次数，得到其上形成有所需的超导体厚膜5的基材3。

公开(公告)号：US20010052198A1

公开(公告)日：2001-12-20

申请号：US09904416

申请日：2001-07-12

申请人： Central Research Institute of Electric Power Industry

发明人： Tetsuo Ono

IPC分类号： C10L001/10 ,  C10L005/00

CPC分类号： C10L1/326

摘要： The present invention relates to high-density coal-water mixed fuel and a producing method thereof and aims to reduce an amount of dispersant to be used in the coal-water mixed fuel having the good fluidity with the increased density and obtain the a coal-water mixed fuel from pulverized coals produced by dry milling at low cost. According to this invention, in case of obtaining the high-density coal-water mixed fuel such as a CWM by mixing the pulverized coals ground to provide a predetermined particle size distribution, water and the dispersant, the hydrophilic colloid which causes the protective effect with respect to the pulverized coals is added and mixed preferably before adding the dispersant so that the high-density coal-water mixed fuel which includes the hydrophilic colloid and a reduced amount of a surface active agent used can be provided. An amount of the hydrophilic colloid to be added is less than 1 wt % of the entire CWM and larger than an amount for causing reciprocal aggregation with the pulverized coals, or more preferably it is in the order from ppm to ppt. Further, when the pulverized coals are rubbed together and the angles thereof are shaved off for production from the pulverized coals, the pulverized coals are spheroidized without extremely being minimized from their original particle size, and superfine particles in the coal particles are generated, thereby enabling adjustment to provide a preferable particle size distribution as the CWM.

摘要翻译： 本发明涉及高密度煤​​ - 水混合燃料及其制造方法，其目的在于减少在密度较高的流动性良好的煤 - 水混合燃料中使用的分散剂用量， 以低成本通过干磨生产的粉煤的水混合燃料。 根据本发明，在通过混合粉碎煤以提供预定的粒度分布的水和分散剂来获得诸如CWM的高密度煤 - 水混合燃料的情况下，引起保护作用的亲水胶体 相对于粉煤，加入分散剂之前，优选加入混合物，从而可以提供包含亲水胶体的高密度煤水混合燃料和减少用量的表面活性剂。 所添加的亲水性胶体的量小于整个CWM的1重量％，并且大于与粉煤共同聚集的量，更优选为从ppm到ppt的顺序。 此外，当粉碎的煤被摩擦在一起并且其角度被刮掉以从粉碎的煤产生时，粉碎的煤被球化，而不会从它们的原始粒度极小化，并且产生煤颗粒中的超细颗粒，从而使得 调整以提供优选的粒度分布作为CWM。

公开(公告)号：US12062162B2

公开(公告)日：2024-08-13

申请号：US17433885

申请日：2020-02-26

申请人： NEC CORPORATION ,  Central Research Institute of Electric Power Industry

发明人： Masahito Sakai ,  Norihiko Itoh

IPC分类号： G06K9/00 ,  G06K7/14 ,  G06T5/80 ,  G06V10/20 ,  G06V10/24

CPC分类号： G06T5/80 ,  G06K7/1417 ,  G06K7/1456 ,  G06V10/20 ,  G06V10/247 ,  G06V2201/034

摘要： An image processing device performs projection conversion that makes an image captured of an object to be recognized closer to a normal image captured from front of the object to be recognized based on a correlation between: a pre-specified plurality of feature ranges dispersed within a range of the object to be recognized; and a plurality of feature ranges designated based on the dispersion in the image.

公开(公告)号：US20240191392A1

公开(公告)日：2024-06-13

申请号：US18588308

申请日：2024-02-27

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Akiyoshi HORIAI ,  Takeshi OKAMOTO ,  Takahiro KANDA ,  Norihiro HOSHINO ,  Kiyoshi BETSUYAKU ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Takashi KANEMURA

IPC分类号： C30B25/10 ,  C30B25/14 ,  C30B25/16 ,  C30B29/36

CPC分类号： C30B25/10 ,  C30B25/14 ,  C30B25/16 ,  C30B29/36

摘要： A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ΔT in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ΔT≤10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.

公开(公告)号：US11081246B2

公开(公告)日：2021-08-03

申请号：US15335514

申请日：2016-10-27

申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Hirofumi Takeda

IPC分类号： G21F5/10 ,  G21C19/04 ,  G21C19/06 ,  G21F9/34 ,  G21F9/36

摘要： A cooling air amount adjustment device of a concrete cask is provided. The device includes at least one of an air outlet port opening level adjustment mechanism and an air inlet port opening level adjustment mechanism which are adapted to automatically perform adjustment to reduce a flow rate of a cooling air when a temperature of the cooling air at an air outlet port is lower than an adjustment reference temperature, and adjustment to increase the flow rate of the cooling air so as to restore the flow rate of the cooling air when the temperature of the cooling air at the air outlet port is higher than the adjustment reference temperature.