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    Low-voltage image sensor with sensing control unit formed within
    2.
    发明授权
    Low-voltage image sensor with sensing control unit formed within 有权
    低压图像传感器与感应控制单元组成

    公开(公告)号：US08169010B2

    公开(公告)日：2012-05-01

    申请号：US11932922

    申请日：2007-10-31

    Applicant: Mi Jin Kim ,  Bong Ki Mheen ,  Young Joo Song ,  Seong Su Park

    Inventor： Mi Jin Kim ,  Bong Ki Mheen ,  Young Joo Song ,  Seong Su Park

    IPC: H01L31/00

    CPC classification number: H01L27/14609 ,  H04N5/235 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/374

    Abstract: Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.

    Abstract translation: 提供了一种图像传感器及其感测方法。 图像传感器包括：光接收装置; 信号转换单元，包括具有多个传输门并将由光接收装置产生的光电荷转换成电压以输出电压的传输晶体管; 以及感测控制单元，用于在一次光敏周期期间产生施加到传输晶体管的传输门的至少两个复位信号和/或至少两个传输信号。 图像传感器通过改变典型的4晶体管CMOS图像传感器的传输晶体管的结构和驱动方法获得，并且采用深度耗尽操作和多重复位操作，从而减少图像滞后并增加光阱的容量 接收设备。

    Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof
    3.
    发明授权
    Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof 有权
    具有用于抑制暗电流的光电二极管和扩散节点之间的多个栅极的低电压图像传感器及其驱动传输晶体管的方法

    公开(公告)号：US07829834B2

    公开(公告)日：2010-11-09

    申请号：US11875513

    申请日：2007-10-19

    Applicant: Mi Jin Kim ,  Bong Ki Mheen ,  Young Joo Song ,  Seong Su Park

    Inventor： Mi Jin Kim ,  Bong Ki Mheen ,  Young Joo Song ,  Seong Su Park

    IPC: H01L27/00 ,  H01J40/14 ,  H04N3/14

    CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H04N5/361 ,  H04N5/365 ,  H04N5/3745

    Abstract: Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.

    Abstract translation: 提供了通过改变4晶体管CMOS晶体管的典型转移晶体管的结构和驱动方法获得的低压图像传感器和驱动其传输晶体管的方法，并且可以消除电压或 在光电二极管复位或传输操作时扩散节点的物理结构。 图像传感器包括用于检测光的光接收装置和用于将由光接收装置产生的光电荷读取到外部电路的信号转换单元。 信号转换单元包括至少两个栅电极的转移晶体管。 当光电荷转移到最靠近光电二极管设置的传输栅电极的沟道时，与扩散节点相邻设置的传输栅电极保持关闭。

    Methods of manufacturing trench isolation structures using selective plasma ion immersion implantation and deposition (PIIID)
    4.
    发明授权
    Methods of manufacturing trench isolation structures using selective plasma ion immersion implantation and deposition (PIIID) 有权
    使用选择性等离子体离子浸入和沉积（PIIID）制造沟槽隔离结构的方法

    公开(公告)号：US07807543B2

    公开(公告)日：2010-10-05

    申请号：US12134760

    申请日：2008-06-06

    Applicant: Dong-woon Shin ,  Tai-su Park ,  Si-young Choi ,  Soo-jin Hong ,  Mi-jin Kim

    Inventor： Dong-woon Shin ,  Tai-su Park ,  Si-young Choi ,  Soo-jin Hong ,  Mi-jin Kim

    IPC: H01L21/76

    CPC classification number: H01L21/823481 ,  H01L21/76229 ,  H01L21/823456 ,  H01L27/0921 ,  H01L27/105

    Abstract: A semiconductor device is manufactured by forming trenches in a substrate and selectively performing Plasma Ion Immersion Implantation and Deposition (PIIID) on a subset of the trenches in the substrate. The PIIID may be performed on only a portion of a surface of at least one of the trenches in the substrate. Semiconductor devices can include a semiconductor substrate having first, second and third trenches therein, and an oxide liner layer that fully lines the first trenches, that does not line the second trenches and that partially lines the third trenches.

    Abstract translation: 通过在衬底中形成沟槽并且在衬底中的沟槽的子集上选择性地执行等离子体离子注入植入和沉积（PIIID）来制造半导体器件。 PIIID可以仅在衬底中的至少一个沟槽的表面的一部分上进行。 半导体器件可以包括其中具有第一，第二和第三沟槽的半导体衬底以及不对第一沟槽进行线条化的氧化物衬层，其不线性化第二沟槽并且部分地对第三沟槽进行排列。

    Image sensor for low-noise voltage operation
    6.
    发明授权
    Image sensor for low-noise voltage operation 有权
    用于低噪声电压操作的图像传感器

    公开(公告)号：US07554074B2

    公开(公告)日：2009-06-30

    申请号：US11866698

    申请日：2007-10-03

    Applicant: Bong Ki Mheen ,  Min Hyung Cho ,  Mi Jin Kim ,  Young Joo Song

    Inventor： Bong Ki Mheen ,  Min Hyung Cho ,  Mi Jin Kim ,  Young Joo Song

    IPC: H03F3/08 ,  H01L27/00 ,  H04N3/14

    CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/14609 ,  H04N5/361

    Abstract: An image sensor operated in a pseudo pinch-off condition capable of reducing a reset voltage of a photodiode and reducing a dark current and fixed pattern noise generated due to discordance of characteristics between pixels is presented. The image sensor has a photosensitive pixel, a driving circuit and an intermediary circuit. The photosensitive pixel can have a photodiode generating a photoelectrons, a transfer transistor transferring the photoelectrons to a diffusion node, and a reset transistor resetting the diffusion node. The driving circuit generates a driving switching signal with respect to the transfer and resist transistors. The intermediary circuit changes characteristics of the signal to drive the photosensitive pixel in a pseudo pinch-off mode.

    Abstract translation: 提供了一种以能够减少光电二极管的复位电压并且减少由于像素之间的特性不一致而产生的暗电流和固定图案噪声的伪夹断条件操作的图像传感器。 图像传感器具有光敏像素，驱动电路和中间电路。 感光像素可以具有产生光电子的光电二极管，将光电子传输到扩散节点的转移晶体管以及复位扩散节点的复位晶体管。 驱动电路相对于转移和抗蚀剂晶体管产生驱动切换信号。 中间电路改变信号的特性以在伪夹断模式下驱动光敏像素。

    LOW-VOLTAGE IMAGE SENSOR AND SENSING METHOD THEREOF
    7.
    发明申请
    LOW-VOLTAGE IMAGE SENSOR AND SENSING METHOD THEREOF 有权
    低电压图像传感器及其感应方法

    公开(公告)号：US20080111170A1

    公开(公告)日：2008-05-15

    申请号：US11932922

    申请日：2007-10-31

    Applicant: Mi Jin KIM ,  Bong Ki Mheen ,  Young Joo Song ,  Seong Su Park

    Inventor： Mi Jin KIM ,  Bong Ki Mheen ,  Young Joo Song ,  Seong Su Park

    IPC: H01L31/00

    CPC classification number: H01L27/14609 ,  H04N5/235 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/374

    Abstract: Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.

    Abstract translation: 提供了一种图像传感器及其感测方法。 图像传感器包括：光接收装置; 信号转换单元，包括具有多个传输门并将由光接收装置产生的光电荷转换成电压以输出电压的传输晶体管; 以及感测控制单元，用于在一次光敏周期期间产生施加到传输晶体管的传输门的至少两个复位信号和/或至少两个传输信号。 图像传感器通过改变典型的4晶体管CMOS图像传感器的传输晶体管的结构和驱动方法获得，并且采用深度耗尽操作和多重复位操作，从而减少图像滞后并增加光阱的容量 接收设备。

    Poly(Silsesquioxane) Spherical Particle Containing Ultraviolet Light-Absorbing Group and Manufacturing Method Thereof
    8.
    发明申请
    Poly(Silsesquioxane) Spherical Particle Containing Ultraviolet Light-Absorbing Group and Manufacturing Method Thereof 有权
    聚（倍半硅氧烷）含紫外光吸收组的球形颗粒及其制造方法

    公开(公告)号：US20070249854A1

    公开(公告)日：2007-10-25

    申请号：US11587916

    申请日：2004-08-24

    Applicant: Young-Baek Kim ,  Kyung-Sup Yoon ,  Mi-Jin Kim ,  Mi-Sun Leem

    Inventor： Young-Baek Kim ,  Kyung-Sup Yoon ,  Mi-Jin Kim ,  Mi-Sun Leem

    IPC: C07F7/10

    CPC classification number: A61K8/898 ,  A61K8/02 ,  A61K2800/412 ,  A61K2800/57 ,  A61Q17/04 ,  C08G77/04 ,  C08G77/26

    Abstract: The present invention relates to a polysilsesquioxane spherical particle containing a ultraviolet light (UV) absorbing group, and manufacturing method thereof, characterized in that a preferred embodiment of the present invention comprises (i) preparing a silsesquioxane precursor containing the UV-absorbing group; and (ii) reacting the silsesquioxane precursor prepared in the step (i) with aminoalkylalkoxy silane compound or its oligomer under a solvent by means of a catalyst or a catalyst and co-polymerization precursor to prepare a polysilsesquioxane spherical particle containing a UV-absorbing group. The present invention provides the polysilsesquioxane spherical particle having a good physical property and a good UV-absorbing efficency as cosmetic additive, and a simple and economical method of manufacturing the spherical particle.

    Abstract translation: 本发明涉及含有紫外线（UV）吸收基团的聚倍半硅氧烷球形颗粒及其制造方法，其特征在于本发明的优选实施方案包括（i）制备含有紫外线吸收基团的倍半硅氧烷前体; 和（ii）通过催化剂或催化剂和共聚合前体使溶剂中的步骤（ⅰ）中制备的倍半硅氧烷前体与氨基烷基烷氧基硅烷化合物或其低聚物反应，制备含紫外线吸收基团的聚倍半硅氧烷球形颗粒 。 本发明提供作为化妆品添加剂具有良好的物理性能和良好的紫外线吸收效率的聚倍半硅氧烷球形颗粒，以及制造球形颗粒的简单且经济的方法。

    Image sensor and method of driving transfer transistor of image sensor
    9.
    发明授权
    Image sensor and method of driving transfer transistor of image sensor 有权
    图像传感器和驱动图像传感器传输晶体管的方法

    公开(公告)号：US08415603B2

    公开(公告)日：2013-04-09

    申请号：US12630071

    申请日：2009-12-03

    Applicant: Bong Ki Mheen ,  Mi Jin Kim ,  Young Joo Song

    Inventor： Bong Ki Mheen ,  Mi Jin Kim ,  Young Joo Song

    IPC: H01L31/062 ,  H04N5/335

    CPC classification number: H04N5/3597 ,  H01L27/14603 ,  H01L27/14609 ,  H04N5/357 ,  H04N5/361 ,  H04N5/3745

    Abstract: Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

    Abstract translation: 提供了一种4晶体管CMOS图像，其中改变驱动条件或像素结构，使得像素在复位和传输操作期间在夹断状态下工作，以减少暗电流和固定图案噪声 由转移晶体管的操作条件的变化和像素间特性差异引起。 图像传感器包括光敏像素，其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元，用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压 转移晶体管使得转移晶体管以伪夹断模式工作。

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