公开(公告)号：US09294702B2

公开(公告)日：2016-03-22

申请号：US14074035

申请日：2013-11-07

Applicant: Tae Yon Lee ,  Jung Kyu Jung ,  Yoon Dong Park ,  Hyun Seok Lee

Inventor： Tae Yon Lee ,  Jung Kyu Jung ,  Yoon Dong Park ,  Hyun Seok Lee

IPC: H01L27/00 ,  H04N5/378 ,  H04N5/374 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H01L2924/0002 ,  H04N5/374 ,  H04N5/3745 ,  H01L2924/00

Abstract: A method of operating an image sensor includes: thermoelectrically cooling a pixel using a thermoelectric element having a thermoelectric-junction integrated to the pixel; and performing a photoelectric conversion operation using the thermoelectric element. An image sensor includes a pixel and a readout circuit. The pixel includes a thermoelectric element having a thermoelectric-junction, and the readout circuit is configured to control the pixel such that the thermoelectric element performs a thermoelectric-cooling operation and a photoelectric conversion operation.

Abstract translation: 操作图像传感器的方法包括：使用具有与像素集成的热电结的热电元件对像素进行热电冷却; 以及使用该热电元件进行光电转换操作。 图像传感器包括像素和读出电路。 像素包括具有热电结的热电元件，并且读出电路被配置为控制像素，使得热电元件执行热电冷却操作和光电转换操作。

公开(公告)号：US20150287766A1

公开(公告)日：2015-10-08

申请号：US14676399

申请日：2015-04-01

Applicant: Tae-Chan Kim ,  June-Taeg Lee ,  Dong-Ki Min ,  Sang-Chul Sul ,  Myung-Won Lee ,  Tae-Yon Lee ,  Jung-Kyu Jung

Inventor： Tae-Chan Kim ,  June-Taeg Lee ,  Dong-Ki Min ,  Sang-Chul Sul ,  Myung-Won Lee ,  Tae-Yon Lee ,  Jung-Kyu Jung

IPC: H01L27/30 ,  H01L27/146

CPC classification number: H01L27/307 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14665

Abstract: A unit pixel of an image sensor is provided. The unit pixel includes a visible light detection layer and an infrared light detection layer disposed on the visible light detection layer. The visible light detection layer includes visible light pixels and color filters configured to detect visible light to output first charges. The infrared light detection layer includes at least one infrared light pixel configured to detect infrared light to output second charges.

Abstract translation: 提供图像传感器的单位像素。 单位像素包括可见光检测层和设置在可见光检测层上的红外光检测层。 可见光检测层包括可见光像素和被配置为检测可见光以输出第一电荷的滤色器。 红外光检测层包括被配置为检测红外光以输出第二电荷的至少一个红外光像素。

公开(公告)号：US20140103413A1

公开(公告)日：2014-04-17

申请号：US14052024

申请日：2013-10-11

Applicant: Young Gu JIN ,  Min Ho KIM ,  Tae Chan KIM ,  Dong Ki MIN ,  Sang Chul SUL ,  Tae Seok OH ,  Kwang Hyun LEE ,  Tae Yon LEE ,  Ju Hwan JUNG

Inventor： Young Gu JIN ,  Min Ho KIM ,  Tae Chan KIM ,  Dong Ki MIN ,  Sang Chul SUL ,  Tae Seok OH ,  Kwang Hyun LEE ,  Tae Yon LEE ,  Ju Hwan JUNG

IPC: H01L27/146

CPC classification number: H04N5/363 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

Abstract: ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

Abstract translation: ACMOS图像传感器包括具有多个像素的像素阵列。 所述多个像素中的每一个包括：被配置为基于第一栅极电压来控制的光栅结构; 以及感测晶体管，其包括形成在衬底区域中的电荷袋区域，所述感测晶体管被配置为基于第二栅极电压来控制。 基于第一栅极电压，光栅结构被配置为集成响应于入射在衬底区域上的光而产生的电荷。 感测晶体管被配置为根据第一栅极电压和第二栅极电压之间的差异，根据从光栅结构传输到电荷袋区域的电荷来调节感测晶体管的阈值电压和感测晶体管中的电流的至少一个 第二栅极电压。

公开(公告)号：US20130119234A1

公开(公告)日：2013-05-16

申请号：US13615424

申请日：2012-09-13

Applicant: Yong-Jei LEE ,  Young-Gu JIN ,  Tae-Yon LEE ,  Yoon-Dong PARK ,  Eric R. FOSSUM

Inventor： Yong-Jei LEE ,  Young-Gu JIN ,  Tae-Yon LEE ,  Yoon-Dong PARK ,  Eric R. FOSSUM

IPC: H01L27/146 ,  H01L31/103 ,  H01L31/105 ,  H01L31/101

CPC classification number: H01L27/14609 ,  H01L27/1461 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1808 ,  Y02E10/50

Abstract: A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object.

Abstract translation: 三维图像传感器的单位像素包括非硅光电检测器和至少一个读出电路。 非硅光电检测器形成在硅衬底上，非硅光电探测器包括至少一种非硅材料，以响应于入射光产生光电荷。 所述至少一个读出电路形成在所述硅衬底处，所述至少一个读出电路基于所述光电荷输出感测信号，并且所述感测信号产生与物体的距离的深度信息。

公开(公告)号：US20130020463A1

公开(公告)日：2013-01-24

申请号：US13550838

申请日：2012-07-17

Applicant: Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

Inventor： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

IPC: G01J1/44

CPC classification number: H04N5/357 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/378

Abstract: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

Abstract translation: 在操作图像传感器的方法中，在对浮动扩散区域施加复位电压之后，对浮动扩散区域的噪声电压进行采样。 在对噪声电压进行采样之后，存储光电荷的存储区域与浮动扩散区域电连接，并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样， 连接的。 基于噪声电压和解调电压确定电压。

公开(公告)号：US08330226B2

公开(公告)日：2012-12-11

申请号：US13455297

申请日：2012-04-25

Applicant: Tae-Yon Lee

Inventor： Tae-Yon Lee

IPC: H01L29/76

CPC classification number: H01L45/1233 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1246 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/778

Abstract: A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.

Abstract translation: PRAM器件包括下电极，相变纳米线和上电极。 相变纳米线可以电连接到下电极并且包括单个元件。 上电极可以电连接到相变纳米线。

公开(公告)号：US08193029B2

公开(公告)日：2012-06-05

申请号：US12801450

申请日：2010-06-09

Applicant: Tae-Yon Lee

Inventor： Tae-Yon Lee

IPC: H01L21/00 ,  H01L21/335

CPC classification number: H01L45/1233 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1246 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/778

Abstract: A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.

Abstract translation: PRAM器件包括下电极，相变纳米线和上电极。 相变纳米线可以电连接到下电极并且包括单个元件。 上电极可以电连接到相变纳米线。

公开(公告)号：US09894301B2

公开(公告)日：2018-02-13

申请号：US14877539

申请日：2015-10-07

Applicant: Young Gu Jin ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

Inventor： Young Gu Jin ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

IPC: H01L27/00 ,  H04N5/363 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/378

CPC classification number: H04N5/363 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

Abstract: ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

公开(公告)号：US20110214736A1

公开(公告)日：2011-09-08

申请号：US13010373

申请日：2011-01-20

Applicant: Tae-Yon LEE ,  Dong-Seok Suh

Inventor： Tae-Yon LEE ,  Dong-Seok Suh

IPC: H01L31/032 ,  H01L29/18

CPC classification number: H01L29/18 ,  H01L31/0322 ,  H01L31/103 ,  H01L31/109 ,  Y02E10/541

Abstract: A photodiode includes a p-type semiconductor material and an n-type chalcogenide compound. The p-type semiconductor material and the n-type chalcogenide compound form a pn-junction.

Abstract translation: 光电二极管包括p型半导体材料和n型硫属化物化合物。 p型半导体材料和n型硫属化物化合物形成pn结。

公开(公告)号：US20100012913A1

公开(公告)日：2010-01-21

申请号：US12459155

申请日：2009-06-26

Applicant: Tae-Yon Lee

Inventor： Tae-Yon Lee

IPC: H01L47/00

CPC classification number: H01L45/00 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004

Abstract: A multi-level phase change random access memory device includes a first electrode, a second electrode, and a phase change material disposed between the first electrode and the second electrode. The multi-level phase change random access memory device also includes a variable bias source coupled to the first electrode. The variable bias source provides a respective bias applied at the first electrode to form a portion of the phase change material to have one of an amorphous state and different crystal states for storing multi-bits data.

Abstract translation: 多级相变随机存取存储器件包括第一电极，第二电极和设置在第一电极和第二电极之间的相变材料。 多电平相变随机存取存储器件还包括耦合到第一电极的可变偏置源。 可变偏置源提供施加在第一电极处的相应偏置，以形成相变材料的一部分以具有用于存储多位数据的非晶状态和不同晶体状态之一。