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    SiC single crystal and production method thereof
    2.
    发明授权
    SiC single crystal and production method thereof 有权

    公开(公告)号：US09856582B2

    公开(公告)日：2018-01-02

    申请号：US13428395

    申请日：2012-03-23

    申请人： Mina Ryo ,  Yoshiyuki Yonezawa ,  Takeshi Suzuki

    发明人： Mina Ryo ,  Yoshiyuki Yonezawa ,  Takeshi Suzuki

    IPC分类号： C30B17/00 ,  C30B29/36 ,  C30B9/10

    CPC分类号： C30B29/36 ,  C30B9/10 ,  C30B17/00

    摘要： A method is disclosed with provides stable growth of SiC single crystals, particularly 4H—SiC single crystals, with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000° C. or lower. A raw material containing Si, Ti and Ni is charged into a crucible made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible into the solvent to obtain a melt. A SiC seed crystal substrate is then brought into contact with the melt such that SiC is supersaturated in the melt in the vicinity of the surface of the SiC seed crystal substrate, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate.

    Apparatus for continuous electrolytic treatment of steel sheet and method for producing surface-treated steel sheet using the same
    4.
    发明授权
    Apparatus for continuous electrolytic treatment of steel sheet and method for producing surface-treated steel sheet using the same 有权
    钢板的连续电解处理装置及使用该钢板的表面处理钢板的制造方法

    公开(公告)号：US09580816B2

    公开(公告)日：2017-02-28

    申请号：US13819500

    申请日：2011-09-14

    申请人： Yuka Miyamoto ,  Takeshi Suzuki ,  Hisato Noro ,  Masao Inose ,  Hiroki Iwasa ,  Norihiko Nakamura ,  Yoichi Tobiyama

    发明人： Yuka Miyamoto ,  Takeshi Suzuki ,  Hisato Noro ,  Masao Inose ,  Hiroki Iwasa ,  Norihiko Nakamura ,  Yoichi Tobiyama

    IPC分类号： C23C28/02 ,  C25D17/12 ,  C25D7/06 ,  C25D9/10

    CPC分类号： C23C28/02 ,  C25D7/0614 ,  C25D7/0642 ,  C25D9/10 ,  C25D17/12

    摘要： Provided are an apparatus for continuous electrolytic treatment of a steel sheet that is suitable for producing a surface-treated steel sheet and a method for producing the surface-treated steel sheet using the apparatus for continuous electrolytic treatment of a steel sheet. The apparatus includes N pairs of tabular electrodes having a length L and being arranged to respectively face two surfaces of a steel sheet. Each electrode includes n sections arranged in the longitudinal direction of the electrode and disposed on the surface of the electrode facing the steel sheet surface. Each section is constituted by a conductive portion including an electrode portion having a length T1 and a nonconductive portion made by making an electrode portion having a length T2 nonconductive, where n×N≧10, 0.96≧T2/(T1+T2)≧0.05, and 0.9≧T1/L≧0.1.

    摘要翻译： 提供一种适用于生产表面处理钢板的钢板的连续电解处理装置以及使用钢板的连续电解处理装置的表面处理钢板的制造方法。 该装置包括N对长度为L的平板状电极，并分别面对钢板的两个表面。 每个电极包括沿着电极的纵向布置的n个部分，并且设置在面对钢板表面的电极的表面上。 每个部分由包括具有长度T1的电极部分和通过制造具有长度T2不导电的电极部分制成的非导电部分的导电部分构成，其中n×N≥10,0.96≥T2/（T1 + T2）≥0.05 ，0.9≥T1/L≥0.1。

    Storage cell and magazine
    7.
    发明授权
    Storage cell and magazine 有权
    存储单元和杂志

    公开(公告)号：US08875907B2

    公开(公告)日：2014-11-04

    申请号：US12678797

    申请日：2008-09-22

    申请人： Takeshi Suzuki ,  Shinichi Iwata

    发明人： Takeshi Suzuki ,  Shinichi Iwata

    IPC分类号： A47F7/00 ,  G11B15/68 ,  G11B17/22

    CPC分类号： G11B15/6885 ,  G11B15/6835 ,  G11B17/225

    摘要： The deep cell (300) of the present invention is capable of accommodating two data cartridges (100) in a row. In addition, the deep cell (300) includes a regulating member (301) for regulating the storage of two data cartridges (100) and for regulating storage to just one data cartridge (100).

    摘要翻译： 本发明的深电池（300）能够容纳两排数据盒（100）。 此外，深电池（300）包括调节构件（301），用于调节两个数据盒（100）的存储并用于将存储调节到仅一个数据盒（100）。

    Tinned steel sheet and method for producing the same
    8.
    发明授权
    Tinned steel sheet and method for producing the same 有权
    镀锡钢板及其制造方法

    公开(公告)号：US08871038B2

    公开(公告)日：2014-10-28

    申请号：US13002842

    申请日：2009-07-02

    申请人： Takeshi Suzuki ,  Norihiko Nakamura ,  Hiroki Iwasa

    发明人： Takeshi Suzuki ,  Norihiko Nakamura ,  Hiroki Iwasa

    IPC分类号： C23C22/07 ,  C23C22/58

    CPC分类号： C23C22/20 ,  C23C2/26 ,  C23C22/08 ,  C23C22/73 ,  C23C28/00 ,  C23C2222/20 ,  C25D3/30 ,  C25D5/48 ,  C25D11/36

    摘要： A tinned steel sheet includes an Sn-containing plating layer disposed on at least one surface of a steel sheet and in which mass per unit area of Sn is 0.05 to 20 g/m2; a first chemical conversion coating disposed on the Sn-containing plating layer and contains P and Sn, and in which mass per unit area of P is 0.3 to 10 mg/m2; a second chemical conversion coating disposed on the first chemical conversion coating and contains P and Al, and in which mass per unit area of P is 1.2 to 10 mg/m2 and mass per unit area of Al is 0.24 to 8.7 mg/m2; and a silane coupling agent-treating layer formed with the silane coupling agent disposed on the second chemical conversion coating and has a mass per unit area of Si of 0.10 to 100 mg/m2.

    摘要翻译： 镀锡钢板包括设置在钢板的至少一个表面上的含Sn镀层，其中Sn的单位面积质量为0.05〜20g / m 2; 第一化学转化涂层，其设置在含Sn镀层上并含有P和Sn，其中每单位面积的P的质量为0.3〜10mg / m 2; 第二化学转化涂层，其设置在第一化学转化膜上并含有P和Al，其中P的单位面积质量为1.2〜10mg / m 2，Al的单位面积质量为0.24〜8.7mg / m 2; 以及硅烷偶联剂处理层，该硅烷偶联剂处理层由设置在第二化学转化膜上的硅烷偶联剂形成，Si的单位面积质量为0.10〜100mg / m 2。

    Method of removing a cartridge
    9.
    发明授权
    Method of removing a cartridge 有权
    取出墨盒的方法

    公开(公告)号：US08869368B2

    公开(公告)日：2014-10-28

    申请号：US13056018

    申请日：2009-08-21

    申请人： Takeshi Suzuki ,  Toshimitsu Kawasaki

    发明人： Takeshi Suzuki ,  Toshimitsu Kawasaki

    IPC分类号： B23P19/00 ,  G11B15/68 ,  G11B17/22

    CPC分类号： G11B15/6835 ,  G11B15/6885 ,  G11B17/225 ,  Y10T29/49815 ,  Y10T29/49822

    摘要： Provided is a method of removing a cartridge, that is to be removed, that is housed in a deep side of a cell and stuck on a wall surface of the cell without increasing the number of components. In order to remove the cartridge stuck on the wall surface of the cell, the method includes a pressing step and a releasing step. In the pressing step, a picker mechanism is abutted on a latch lever, and then moved so as to move the latch lever from an engaged position to a released position. This presses the latch lever to increase the urging force of the urging unit. In the releasing step, after the pressing step, the picker mechanism is moved away from the cell to release the urging force of the latch lever spring.

    摘要翻译： 本发明提供一种除去容纳在电池的深度侧并被卡在电池的壁面上的被除去的盒而不增加部件数量的方法。 为了除去卡在电池壁表面上的盒，该方法包括按压步骤和释放步骤。 在按压步骤中，拾取机构抵靠在闩锁杆上，然后移动，以将闩锁杆从接合位置移动到释放位置。 这按压闩锁杆以增加推动单元的推动力。 在释放步骤中，在压制步骤之后，拾取器机构移动离开单元以释放闩锁杆弹簧的作用力。

    Flexible semiconductor device, method for manufacturing the same, image display device using the same and method for manufacturing the image display device
    10.
    发明授权
    Flexible semiconductor device, method for manufacturing the same, image display device using the same and method for manufacturing the image display device 有权
    柔性半导体器件，其制造方法，使用该半导体器件的图像显示器件以及用于制造图像显示器件的方法

    公开(公告)号：US08847229B2

    公开(公告)日：2014-09-30

    申请号：US13820859

    申请日：2012-02-21

    申请人： Takeshi Suzuki ,  Koichi Hirano ,  Shinobu Masuda

    发明人： Takeshi Suzuki ,  Koichi Hirano ,  Shinobu Masuda

    IPC分类号： H01L29/04 ,  H01L21/027 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L33/08 ,  H01L23/544

    CPC分类号： H01L29/786 ,  H01L21/0274 ,  H01L23/544 ,  H01L27/124 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78693 ,  H01L33/08 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method of the flexible semiconductor device of the present invention comprising the steps of: forming a gate electrode; forming a gate insulating film so that the gate insulating film contacts with the gate electrode; forming a semiconductor layer on the gate insulating film such that the semiconductor layer is opposed to the gate electrode; forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; forming vias in the flexible film layer; forming a first metal layer by disposing a metal foil onto the flexible film layer, and thereby a semiconductor device precursor is provided; and subjecting the first metal layer to a processing treatment to form a wiring from a part of the first metal layer, wherein, in the step of the processing treatment of the first metal layer, the wiring is formed in a predetermined position by using at least one of the vias as an alignment marker.

    摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 本发明的柔性半导体器件的制造方法包括以下步骤：形成栅电极; 形成栅极绝缘膜，使得栅极绝缘膜与栅电极接触; 在所述栅极绝缘膜上形成半导体层，使得所述半导体层与所述栅电极相对; 形成源极和漏极，使得源极和漏极与半导体层接触; 形成柔性膜层，使得柔性膜层覆盖半导体层和源极和漏极; 在柔性膜层中形成通孔; 通过将金属箔设置在柔性膜层上形成第一金属层，从而提供半导体器件前体; 以及对所述第一金属层进行处理处理以从所述第一金属层的一部分形成布线，其中，在所述第一金属层的所述加工处理的步骤中，通过至少使用所述布线形成所述布线在预定位置 其中一个通孔作为对准标记。