公开(公告)号：US20130284604A1

公开(公告)日：2013-10-31

申请号：US13869891

申请日：2013-04-24

Applicant: Tighe A. Spurlin ,  Charles L. Merrill ,  Ludan Huang ,  Matthew Thorum ,  Lee Brogan ,  James E. Duncan ,  Frederick D. Wilmot ,  Marshall R. Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan D. Reid ,  Hyosang S. Lee ,  Mark J. Willey

Inventor： Tighe A. Spurlin ,  Charles L. Merrill ,  Ludan Huang ,  Matthew Thorum ,  Lee Brogan ,  James E. Duncan ,  Frederick D. Wilmot ,  Marshall R. Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan D. Reid ,  Hyosang S. Lee ,  Mark J. Willey

IPC: C25D21/14 ,  C25D17/00 ,  C25D3/38

CPC classification number: C25D21/14 ,  C25D3/38 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25D21/18

Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Abstract translation: 公开了将金属电镀到基底上的装置和方法。 电镀装置包括电镀电池和至少一个氧化装置。 电镀电池包括阴极室和阳极室，隔室由金属阳离子通过但防止有机颗粒穿过。 氧化装置（ODD）被配置为将要电镀的金属的阳离子氧化到基底上，该阳离子在电镀期间存在于阳极电解液中。 在一些实施方案中，ODD被实施为碳阳极，其通过电化学方法从阳极电解液中除去Cu（I）。 在其他实施方案中，ODD被实施为氧化装置（OGD）或外加电流阴极保护阳极（ICCP阳极），这两者都增加了阳极电解液溶液中的氧浓度。 还公开了高效电镀的方法。

公开(公告)号：US20140256127A1

公开(公告)日：2014-09-11

申请号：US13787499

申请日：2013-03-06

Applicant: Tighe A. Spurlin ,  Darcy E. Lambert ,  Durgalakshmi Singhal ,  Andy Antonelli

Inventor： Tighe A. Spurlin ,  Darcy E. Lambert ,  Durgalakshmi Singhal ,  Andy Antonelli

IPC: H01L21/768

CPC classification number: H01L21/76873 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/1851 ,  C23C18/1865 ,  C23C18/1868 ,  C25D17/001 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/76861 ,  H01L21/76862

Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. Metal oxide surfaces are reduced to form a film integrated with a metal seed layer on a substrate by exposing the metal oxide surfaces to a reducing gas atmosphere comprising radicals of a reducing gas species. The radicals of the reducing gas species can form from exposing the reducing gas species to ultraviolet radiation and/or a plasma. The substrate is maintained at a temperature below a temperature that produces agglomeration of the metal seed layer during exposure to the reducing gas atmosphere, such as below 150° C. for copper. In some embodiments, the reducing gas species can include at least one of hydrogen, ammonia, carbon monoxide, diborane, sulfite compounds, carbon and/or hydrocarbons, phosphites, and hydrazine.

Abstract translation: 公开了将金属氧化物表面还原成改性金属表面的方法和装置。 通过将金属氧化物表面暴露于包含还原气体种类的自由基的还原气体气氛中，金属氧化物表面被还原以形成与基底上的金属种子层一体化的膜。 还原气体种类的自由基可以通过将还原气体物质暴露于紫外线和/或等离子体而形成。 将基底保持在低于在暴露于还原气体气氛中的金属种子层附近的温度的温度，例如对于铜低于150℃。 在一些实施方案中，还原气体种类可以包括氢，氨，一氧化碳，乙硼烷，亚硫酸盐化合物，碳和/或烃，亚磷酸酯和肼中的至少一种。

公开(公告)号：US20130323930A1

公开(公告)日：2013-12-05

申请号：US13482786

申请日：2012-05-29

Applicant: Kaushik Chattopadhyay ,  George A. Antonelli ,  Pramod Subramonium ,  Mandyam Sriram ,  Tighe A. Spurlin

Inventor： Kaushik Chattopadhyay ,  George A. Antonelli ,  Pramod Subramonium ,  Mandyam Sriram ,  Tighe A. Spurlin

IPC: H01L21/02

CPC classification number: H01L21/02107 ,  H01L21/02074 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883

Abstract: Provided are methods and systems for forming air gaps in an interconnect layer between adjacent conductive lines. Protective layers may be selectively formed on exposed surfaces of the conductive lines, while structures in between the lines may remain unprotected. These structures may be made from a sacrificial material that is later removed to form voids. In certain embodiments, the structures are covered with a permeable non-protective layer that allows etchants and etching products to pass through during removal. When a work piece having a selectively formed protective layer is exposed to gas or liquid etchants, these etchants remove the sacrificial material without etching or otherwise impacting the metal lines. Voids formed in between these lines may be then partially filled with a dielectric material to seal the voids and/or protect sides of the metal lines. Additional interconnect layers may be formed above the processed layer containing air gaps.

Abstract translation: 提供了用于在相邻导电线之间的互连层中形成气隙的方法和系统。 可以在导电线的暴露表面上选择性地形成保护层，而线之间的结构可以保持不受保护。 这些结构可以由稍后去除以形成空隙的牺牲材料制成。 在某些实施方案中，结构被可渗透的非保护层覆盖，其允许蚀刻剂和蚀刻产物在去除期间通过。 当具有选择性形成的保护层的工件暴露于气体或液体蚀刻剂时，这些蚀刻剂在不蚀刻或以其他方式冲击金属线的情况下去除牺牲材料。 然后可以在这些线之间形成的空隙部分地填充有电介质材料以密封空隙和/或保护金属线的侧面。 附加的互连层可以形成在包含气隙的处理层之上。

公开(公告)号：US20140199497A1

公开(公告)日：2014-07-17

申请号：US13741151

申请日：2013-01-14

Applicant: Tighe A. Spurlin ,  Steven T. Mayer ,  Jonathan D. Reid ,  Artur Kolics ,  Huanfeng Zhu

Inventor： Tighe A. Spurlin ,  Steven T. Mayer ,  Jonathan D. Reid ,  Artur Kolics ,  Huanfeng Zhu

IPC: B05D3/10

CPC classification number: C23C18/1882 ,  C23C18/1653 ,  C25D5/34 ,  C25D21/12 ,  H01L21/76861 ,  H01L21/76873

Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. Metal oxide surfaces are reduced to form a film integrated with a metal seed layer by contacting a solution with a reducing agent with the metal oxide surfaces. The solution with the reducing agent can contact the metal oxide surfaces under conditions that form an integrated film with the metal seed layer, and that reduces reoxidation from exposure the ambient environment. In some embodiments, an additive can be included with the reducing agent to form a surface protecting layer on the metal seed layer. In some embodiments, the metal is copper used in damascene copper structures.

Abstract translation: 公开了将金属氧化物表面还原成改性金属表面的方法和装置。 通过使溶液与还原剂与金属氧化物表面接触，还原金属氧化物表面以形成与金属种子层一体化的膜。 具有还原剂的溶液可以在与金属种子层形成集成膜的条件下接触金属氧化物表面，并且减少暴露于周围环境中的再氧化。 在一些实施方案中，还原剂可以包含添加剂以在金属种子层上形成表面保护层。 在一些实施例中，金属是铜镶嵌铜结构中使用的铜。