公开(公告)号：US20160133469A1

公开(公告)日：2016-05-12

申请号：US14752522

申请日：2015-06-26

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Zhimin WAN ,  Kourosh SAADATMAND ,  Wilhelm P. PLATOW ,  Ger-Pin LIN ,  Ching-I LI ,  Rekha PADMANABHA ,  Gary N. CAI

IPC: H01L21/265

CPC classification number: H01L21/26586 ,  H01J37/3026 ,  H01J37/3171 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31706

Abstract: A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

Abstract translation: 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。

公开(公告)号：US20160111245A1

公开(公告)日：2016-04-21

申请号：US14519080

申请日：2014-10-20

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Kourosh SAADATMAND ,  Nicholas WHITE

IPC: H01J37/147 ,  H01J37/317 ,  H05H5/04

CPC classification number: H01J37/147 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/1538 ,  H05H7/001 ,  H05H7/12 ,  H05H2007/004 ,  H05H2007/122

Abstract: An electrode assembly for accelerating or decelerating an ion beam is provided. In one example, the electrode assembly may include a pair of exit electrodes adjacent to an exit opening of the electrode assembly. The pair of exit electrodes may be positioned on opposite sides of a first plane aligned with a first dimension of the exit opening. A pair of pierce electrodes may be adjacent to the pair of exit electrodes. The pair of pierce electrodes may be positioned on opposite sides of a second plane aligned with a second dimension of the exit opening. The second dimension of the exit opening may be perpendicular to the first dimension of the exit opening. Each pierce electrode may include an angled surface positioned such that a dimension of the angled surface forms an angle of between 40 and 80 degrees with respect to the second plane.

Abstract translation: 提供了用于加速或减速离子束的电极组件。 在一个示例中，电极组件可以包括与电极组件的出口相邻的一对出口电极。 一对出口电极可以定位在与出口的第一尺寸对准的第一平面的相对侧上。 一对穿孔电极可以与该对出口电极相邻。 一对穿孔电极可以定位在与出口开口的第二尺寸对准的第二平面的相对侧上。 出口的第二尺寸可以垂直于出口的第一尺寸。 每个穿孔电极可以包括成角度的表面，其被定位成使得成角度的表面的尺寸相对于第二平面形成介于40度和80度之间的角度。

公开(公告)号：US20170110287A1

公开(公告)日：2017-04-20

申请号：US14883538

申请日：2015-10-14

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin WAN ,  Kourosh SAADATMAND ,  Nicholas WHITE

IPC: H01J37/30

CPC classification number: H01J37/3007 ,  H01J37/1471 ,  H01J37/3171 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/04924

Abstract: Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening.

公开(公告)号：US20150380206A1

公开(公告)日：2015-12-31

申请号：US14318338

申请日：2014-06-27

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Nicholas R. WHITE ,  Kourosh SAADATMAND

IPC: H01J37/147

CPC classification number: H01J37/1472 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/057

Abstract: A single bend energy filter for controlling deflection of a charged particle beam is provided. It includes a first array of electrodes and a second array of electrodes to define a beam channel for the charged particle beam to pass through; an unmatched steering electrode among the first array of electrodes for tuning the bend angle of the charged particle beam; and a plurality of electrical biases applied to the first array of electrodes, the second array of electrodes and the unmatched steering electrode, wherein portion or all of the electrodes have different shapes. A method for controlling deflection of a charged particle beam is also provided. Depending on use of an unmatched steering electrode, the bend angle of the charged particle beam may be fine-tuned, so as to effectively control the deflection of the charged particle beam to achieve a centered beam at the wafer plane.

Abstract translation: 提供了用于控制带电粒子束的偏转的单个弯曲能量过滤器。 它包括第一电极阵列和第二电极阵列，以限定用于带电粒子束通过的束通道; 用于调整带电粒子束的弯曲角度的第一电极阵列中的不匹配的转向电极; 以及施加到第一电极阵列，第二电极阵列和不匹配的转向电极的多个电偏压，其中部分或全部电极具有不同的形状。 还提供了一种用于控制带电粒子束的偏转的方法。 根据使用不匹配的转向电极，可以微调带电粒子束的弯曲角度，以便有效地控制带电粒子束的偏转以在晶片平面上实现中心的光束。

公开(公告)号：US20150371857A1

公开(公告)日：2015-12-24

申请号：US14312617

申请日：2014-06-23

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin WAN ,  Rekha PADMANABHAN ,  Xiao BAI ,  Gary N. CAI ,  Ching-I LI ,  Ger-Pin LIN ,  Shao-Yu HU ,  David HOGLUND ,  Robert E. KAIM ,  Kourosh SAADATMAND

IPC: H01L21/265

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

Abstract translation: 在用于工件的较低剂量率离子注入的示例性过程中，可以使用离子源和提取操纵器来产生离子束。 提取操纵器可以位于离离子源的出口孔的间隙距离处。 当提取操纵器定位在与出射孔的最佳间隙距离处时，离开提取操纵器的离子束的电流可以最大化。 提取操纵器从出口孔定位的间隙距离可以不同于最佳间隙距离至少10％。 可以将第一电位施加到第一组电极。 当离子束通过第一组电极时，离子束的x维度可能增加。 工件可以位于离子束中以将离子注入到工件中。

公开(公告)号：US20150102233A1

公开(公告)日：2015-04-16

申请号：US14490253

申请日：2014-09-18

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Robert KAIM ,  Charles M. FREE ,  David HOGLUND ,  Wilhelm P. PLATOW ,  Kourosh SAADATMAND

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/30472

Abstract: A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Abstract translation: 提供了一种设置用于离子注入的中等电流带状束的方法。 它包括提供一个供给工艺气体和支撑气体的离子源。 过程离子束与质量分析磁体与支撑气体束分离，并且通过改变离子源气体进料中的工作气体与支持气体的比例来控制过程离子束的强度。 过程光束强度也可以用位于离子源下游的一个或多个机械限流装置来控制。 还提供离子束系统。 该方法可以控制目标在约3uA至约3mA之间的总带状束强度。