公开(公告)号：US11299805B2

公开(公告)日：2022-04-12

申请号：US16296343

申请日：2019-03-08

申请人： Applied Materials, Inc.

发明人： Abdul Aziz Khaja ,  Ren-Guan Duan ,  Amit Kumar Bansal ,  Jianhua Zhou ,  Juan Carlos Rocha-Alvarez

IPC分类号： C23C16/44 ,  F16C7/06 ,  F02D15/02 ,  F16C3/28 ,  F02B75/04 ,  F16D41/16 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

摘要： Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.

公开(公告)号：US10480068B2

公开(公告)日：2019-11-19

申请号：US15434853

申请日：2017-02-16

申请人： Applied Materials, Inc.

发明人： Sanjeev Baluja ,  Ren-Guan Duan ,  Kalyanjit Ghosh

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/455

摘要： Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

公开(公告)号：US20190019655A1

公开(公告)日：2019-01-17

申请号：US16132832

申请日：2018-09-17

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Kenneth S. Collins

IPC分类号： H01J37/32 ,  C04B41/87 ,  C04B35/626 ,  C04B41/00 ,  C04B35/553 ,  C23C24/08 ,  C03C10/16 ,  C03C8/00 ,  C04B41/50 ,  C23C24/10 ,  C04B35/10 ,  C04B35/14 ,  C04B35/581 ,  C04B35/584 ,  C04B35/565 ,  C04B41/45

摘要： Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof.

公开(公告)号：US09212099B2

公开(公告)日：2015-12-15

申请号：US13745589

申请日：2013-01-18

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Biraja P. Kanungo ,  Dmitry Lubomirsky

IPC分类号： C04B41/00 ,  C04B41/80 ,  C04B41/89 ,  C04B41/52

CPC分类号： C04B41/87 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/5025 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/80 ,  C04B41/89 ,  Y10T428/249988 ,  Y10T428/265 ,  C04B35/00 ,  C04B35/10 ,  C04B41/4556

摘要： A ceramic article having a ceramic substrate and a ceramic coating with an initial porosity and an initial amount of cracking is provided. The ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate, wherein after the heat treatment the ceramic coating has a reduced porosity and a reduced amount of cracking.

摘要翻译： 提供具有陶瓷基底和具有初始孔隙率和初始裂纹量的陶瓷涂层的陶瓷制品。 陶瓷制品以约0.1℃/分钟至约20℃/分钟的升温速率加热至约1000℃至约1800℃的温度范围。 陶瓷制品在一个或多个温度范围内在高达约24小时的持续时间内进行热处理。 然后将陶瓷制品以升高速度冷却，其中在热处理后，陶瓷涂层具有降低的孔隙率和减少的开裂量。

公开(公告)号：US09051219B2

公开(公告)日：2015-06-09

申请号：US13986040

申请日：2013-03-25

申请人： APPLIED MATERIALS, INC.

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/505 ,  C04B35/486 ,  B32B18/00 ,  H01J37/32

CPC分类号： C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

摘要： A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide, zirconium oxide, and aluminum oxide. In a first embodiment, the solid solution-comprising ceramic article is a solid, sintered body of the solid solution ceramic material. In a second embodiment, the solid solution-comprising article comprises a substrate underlying a solid solution-comprising coating.

摘要翻译： 用于半导体加工的固体溶液陶瓷制品，其耐受含卤素等离子体侵蚀。 含固溶体的陶瓷制品由氧化钇，氧化锆和氧化铝的组合形成。 在第一实施例中，包含固溶体的陶瓷制品是固体陶瓷材料的固体烧结体。 在第二个实施方案中，包含固溶体的物品包括位于固溶体涂层下面的基底。

公开(公告)号：US11373882B2

公开(公告)日：2022-06-28

申请号：US17006361

申请日：2020-08-28

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/486 ,  C04B35/505 ,  H01L21/67

摘要： Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

公开(公告)号：US20190157114A1

公开(公告)日：2019-05-23

申请号：US16252372

申请日：2019-01-18

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： H01L21/67 ,  C04B35/505 ,  C04B35/486

摘要： Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

公开(公告)号：US09896376B2

公开(公告)日：2018-02-20

申请号：US14121484

申请日：2014-09-08

申请人： Applied Materials, Inc.

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Kenneth S. Collins

IPC分类号： B32B15/04 ,  B32B17/06 ,  C03C10/16 ,  C03C3/247 ,  C03C3/32 ,  C03C8/24 ,  C04B35/119 ,  C04B37/00 ,  H01L21/67

CPC分类号： C03C10/16 ,  C03C3/247 ,  C03C3/325 ,  C03C8/24 ,  C03C2204/00 ,  C04B35/119 ,  C04B37/005 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/445 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/80 ,  C04B2237/06 ,  C04B2237/064 ,  C04B2237/08 ,  C04B2237/10 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/60 ,  C04B2237/708 ,  C04B2237/72 ,  H01L21/6719

摘要： A bonded ceramic component which is resistant to reactive halogen-containing plasmas, said component comprising ceramic portions which are bonded together by a bonding material which includes an oxyfluoride glass-ceramic-comprising transition area between interfaces of the ceramic portions, where the transition area includes from at least 0.1 volume % amorphous phase up to about 50 volume % amorphous phase.

公开(公告)号：US09428424B2

公开(公告)日：2016-08-30

申请号：US14623402

申请日：2015-02-16

申请人： Applied Materials, Inc.

发明人： Ren-Guan Duan ,  Juan Carlos Rocha-Alvarez ,  Ramprakash Sankarakrishnan

IPC分类号： B01J19/12 ,  C04B41/00 ,  F27D19/00 ,  F27D7/06 ,  C04B41/80 ,  C23C14/56 ,  C23C16/44 ,  F27B17/00 ,  C04B35/111 ,  C04B35/488 ,  C04B35/50 ,  C04B35/505 ,  C04B35/565 ,  C04B35/581 ,  C04B35/587 ,  C03C23/00

CPC分类号： C04B41/0081 ,  C03C23/007 ,  C04B35/111 ,  C04B35/488 ,  C04B35/50 ,  C04B35/505 ,  C04B35/565 ,  C04B35/581 ,  C04B35/587 ,  C04B41/009 ,  C04B41/80 ,  C04B2235/3225 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/96 ,  C23C14/564 ,  C23C16/4401 ,  F27B17/0025 ,  F27D7/06 ,  F27D19/00 ,  F27D2007/063 ,  F27D2019/0028 ,  C04B35/00 ,  C04B35/10 ,  C04B35/584 ,  C04B35/48

摘要： Embodiments described herein generally relate to apparatus and methods for thermally treating chamber components for use in ultraviolet semiconductor processing chambers. Thermal treatment of chamber components comprising unitary ceramic or glass articles may reduce the probability of particle generation when the chamber components are exposed to corrosive environments, such as exposure to ultraviolet light and ozone/oxygen radicals. A method of thermally treating chamber components includes heating the unitary article at an acceptable ramp rate to a desired temperature for a desired time period and subsequently cooling the unitary article at the ramping rate.

摘要翻译： 本文描述的实施方案一般涉及用于紫外线半导体处理室中用于热处理腔室部件的设备和方法。 包括单一陶瓷或玻璃制品的腔室部件的热处理可能会降低室内部件暴露于腐蚀性环境（如暴露于紫外线和臭氧/氧自由基）时产生颗粒的可能性。 热处理腔室部件的方法包括以可接受的斜坡速率将整体制品加热到期望的温度达所需的时间段，随后以斜坡速率冷却整体制品。

公开(公告)号：US09384950B2

公开(公告)日：2016-07-05

申请号：US14601274

申请日：2015-01-21

申请人： Applied Materials, Inc.

发明人： Ren-Guan Duan ,  Juan Carlos Rocha-Alvarez ,  Jianhua Zhou ,  Ningli Liu ,  Yihong Chen ,  Abhijit Basu Mallick ,  Sudhir R. Gondhalekar

IPC分类号： C04B35/00 ,  H01J37/32 ,  C09D1/00

CPC分类号： H01J37/32477 ,  C09D1/00 ,  C09D7/61 ,  H01J37/32467

摘要： In one embodiment, a processing chamber is disclosed wherein at least one surface of the processing chamber has a coating comprising SivYwMgxAlyOz, wherein v ranges from about 0.0196 to 0.2951, w ranges from about 0.0131 to 0.1569, x ranges from about 0.0164 to 0.0784, y ranges from about 0.0197 to 0.1569, z ranges from about 0.5882 to 0.6557, and v+w+x+y+z=1.

摘要翻译： 在一个实施方案中，公开了一种处理室，其中处理室的至少一个表面具有包含SivYwMg x AlyO z的涂层，其中v为约0.0196至0.2951，w为约0.0131至0.1569，x为约0.0164至0.0784，y为 范围为约0.0197至0.1569，z范围为约0.5882至0.6557，v + w + x + y + z = 1。