公开(公告)号：US20230411147A1

公开(公告)日：2023-12-21

申请号：US18334058

申请日：2023-06-13

Applicant: ASM IP Holding, B.V.

Inventor： Jihee Jeon ,  Timothee Blanquart ,  Viljami Pore ,  Charles Dezelah

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02214 ,  H01J37/32357 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  H01J2237/332 ,  H01J2237/2001

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

公开(公告)号：US20230115806A1

公开(公告)日：2023-04-13

申请号：US17953502

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Jihee Jeon

IPC: H01L21/768 ,  H01L21/02

Abstract: A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap, and optionally exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap. Exemplary methods can further include a step of heat treating the flowable layer or the converted material. Exemplary systems can perform the method.

公开(公告)号：US20240339359A1

公开(公告)日：2024-10-10

申请号：US18626758

申请日：2024-04-04

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Jihee Jeon ,  YongMin Yoo ,  Andrey Sokolov ,  Maarten Stokhof ,  Steven Van Aerde ,  Dieter Pierreux ,  Hussein Mehdi

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02274

Abstract: The present disclosure relates to method and apparatuses for filling a gap on a substrate. The method comprises providing a substrate, which comprises at least one gap into a reaction chamber, depositing a silicon containing first layer onto the substrate; subjecting the first layer to a phosphorous containing compound to form a flowable intermediate material, which at least partially fills the at least one gap on the substrate; and forming a solid material comprising silicon.

公开(公告)号：US20220076996A1

公开(公告)日：2022-03-10

申请号：US17467590

申请日：2021-09-07

Applicant: ASM IP holding B.V.

Inventor： Timothee Blanquart ,  Viljami Pore ,  René Vervuurt ,  Jihee Jeon

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50 ,  C23C16/34

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen.

公开(公告)号：US12211742B2

公开(公告)日：2025-01-28

申请号：US17467590

申请日：2021-09-07

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  Viljami Pore ,  René Vervuurt ,  Jihee Jeon

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02 ,  H01L21/768

Abstract: Methods for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen. The gap filling fluid can be formed by introducing a precursor into the reaction chamber and introducing a co-reactant into the reaction chamber to form a gap filling fluid that at least partially fills the gap.

公开(公告)号：US20240222190A1

公开(公告)日：2024-07-04

申请号：US18398796

申请日：2023-12-28

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  Jihee Jeon

IPC: H01L21/768 ,  C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  C23C16/402 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/3321

Abstract: Methods and apparatus for forming a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap-filling material. The gap-filling material includes silicon.

公开(公告)号：US20240209499A1

公开(公告)日：2024-06-27

申请号：US18534817

申请日：2023-12-11

Applicant: ASM IP Holding B.V.

Inventor： Miguel Sérgio De Abreu Neto ,  Jihee Jeon ,  Imane Abdellaoui ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/342 ,  C23C16/45538 ,  C23C16/56

Abstract: Methods and systems for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods and systems that can be used for depositing a boron nitride film by a PECVD process.

公开(公告)号：US20220122841A1

公开(公告)日：2022-04-21

申请号：US17451280

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Timothee Blanquart ,  Takahiro Onuma ,  Shinya Yoshimoto ,  Charles Dezelah ,  Jihee Jeon

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

Abstract: Methods and systems for manufacturing a structure comprising a substrate are provided herein. In some embodiments, the substrate comprises a plurality of recesses. The recesses may be at least partially filled with a gap filling fluid. The gap filling fluid may comprise an Si—N bond.