公开(公告)号：US11646194B2

公开(公告)日：2023-05-09

申请号：US16794289

申请日：2020-02-19

Applicant: ASM IP Holding B.V.

Inventor： Antti Niskanen ,  Suvi Haukka ,  Jaakko Anttila

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02211 ,  H01L21/02274

Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

公开(公告)号：US11062914B2

公开(公告)日：2021-07-13

申请号：US16987990

申请日：2020-08-07

Applicant: ASM IP HOLDING B.V.

Inventor： Antti Juhani Niskanen ,  Jaakko Anttila

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

公开(公告)号：US12129545B2

公开(公告)日：2024-10-29

申请号：US17554253

申请日：2021-12-17

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Jaakko Anttila

IPC: C23C16/448

CPC classification number: C23C16/448

Abstract: The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.

公开(公告)号：US11139383B2

公开(公告)日：2021-10-05

申请号：US16849144

申请日：2020-04-15

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20190043962A1

公开(公告)日：2019-02-07

申请号：US15997520

申请日：2018-06-04

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20170098550A1

公开(公告)日：2017-04-06

申请号：US15331366

申请日：2016-10-21

Applicant: ASM IP HOLDING B.V

Inventor： Antti Juhani Niskanen ,  Jaakko Anttila

IPC: H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/32135 ,  H01L21/02074 ,  H01L21/02225 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31111 ,  H01L21/32136 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

公开(公告)号：US09412602B2

公开(公告)日：2016-08-09

申请号：US13802157

申请日：2013-03-13

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Jaakko Anttila

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

Abstract translation: 在一方面，提供了形成平滑三元金属氮化物膜的方法，例如TixWyNz膜。 在一些实施例中，通过包括多个超级循环的ALD工艺形成膜，每个超周期包括两个沉积子循环。 在一个子周期中，例如从TiCl 4和NH 3沉积诸如TiN的金属氮化物，并且在另一个子周期中沉积诸如W的元素金属，例如WF 6和Si 2 H 6。 可以选择在每个超级循环内执行的每个子循环的数量的比例以获得所需组合物的膜并具有期望的性质。

公开(公告)号：US20250092517A1

公开(公告)日：2025-03-20

申请号：US18899215

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Jaakko Anttila

IPC: C23C16/448

Abstract: The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.

公开(公告)号：US11421321B2

公开(公告)日：2022-08-23

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US20200328285A1

公开(公告)日：2020-10-15

申请号：US16849144

申请日：2020-04-15

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.