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公开(公告)号：US10990018B2
公开(公告)日：2021-04-27
申请号：US16481143
申请日：2018-02-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US10545410B2
公开(公告)日：2020-01-28
申请号：US16076743
申请日：2017-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergun Cekli , Masashi Ishibashi , Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Reiner Maria Jungblut , Cedric Marc Affentauschegg , Ronald Henricus Johannes Otten
Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.
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公开(公告)号：US20140354969A1
公开(公告)日：2014-12-04
申请号：US14355962
申请日：2012-11-22
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Li Chung-Hsun
IPC: G01N21/95 , H01J37/317 , G01N23/20
CPC classification number: G01B11/002 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/9501 , G01N21/956 , G01N21/95607 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G05B19/41875 , G05B2219/37224 , H01L22/20 , Y02P90/20 , Y02P90/22
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.
Abstract translation: 在测量晶片衬底的特性（例如临界尺寸或覆盖层）时，产生用于测量衬底性质的采样计划（2506），其中采样计划包括多个次采样图。 采样计划可以被约束到预定的固定数量的测量点，并且被使用（2508）来控制检查装置，以使用对于各个基板的不同的子采样计划来执行多个基板的属性的多个测量 ，结果（2510）根据样本计划至少部分地重新组合测量结果。
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4.发明申请公开(公告)号：US20190212664A1
公开(公告)日：2019-07-11
申请号：US16352907
申请日：2019-03-14
Applicant: ASML NETHERLANDS B.V.
Abstract: A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.
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公开(公告)号：US10317191B2
公开(公告)日：2019-06-11
申请号：US15432684
申请日：2017-02-14
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G03F7/20 , G01B11/00 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/95 , H01L21/66 , G01N21/956 , G05B19/418
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
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Patent Agency Ranking
公开(公告)号：US11126093B2
公开(公告)日：2021-09-21
申请号：US16099452
申请日：2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Reiner Maria Jungblut , Leon Paul Van Dijk , Willem Seine Christian Roelofs , Wim Tjibbo Tel , Stefan Hunsche , Maurits Van Der Schaar
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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公开(公告)号：US10746668B2
公开(公告)日：2020-08-18
申请号：US16380223
申请日：2019-04-10
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US10558130B2
公开(公告)日：2020-02-11
申请号：US16352907
申请日：2019-03-14
Applicant: ASML NETHERLANDS B.V.
Abstract: A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.
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公开(公告)号：US20190301850A1
公开(公告)日：2019-10-03
申请号：US16380223
申请日：2019-04-10
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk ELINGS , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01B11/00 , G01B11/02 , G01B11/14 , G01B11/26 , H01L21/66 , G03F7/20 , G05B19/418 , G01N21/956 , G01N21/95
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US10996176B2
公开(公告)日：2021-05-04
申请号：US16905629
申请日：2020-06-18
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
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