Extreme ultraviolet light source
    1.
    发明授权

    公开(公告)号:US08866110B2

    公开(公告)日:2014-10-21

    申请号:US14199261

    申请日:2014-03-06

    CPC classification number: H05G2/003 H05G2/005 H05G2/008

    Abstract: Techniques are described that enhance power from an extreme ultraviolet light source with feedback from a target material that has been modified prior to entering a target location into a spatially-extended target distribution or expanded target. The feedback from the spatially-extended target distribution provides a nonresonant optical cavity because the geometry of the path over which feedback occurs, such as the round-trip length and direction, can change in time, or the shape of the spatially-extended target distribution may not provide a smooth enough reflectance. However, it may be possible that the feedback from the spatially-extended target distribution provides a resonant and coherent optical cavity if the geometric and physical constraints noted above are overcome. In any case, the feedback can be generated using spontaneously emitted light that is produced from a non-oscillator gain medium.

    EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods

    公开(公告)号:US10966308B2

    公开(公告)日:2021-03-30

    申请号:US15208548

    申请日:2016-07-12

    Abstract: A device is disclosed herein which may comprise a droplet generator producing droplets of target material; a sensor providing an intercept time signal when a droplet reaches a preselected location; a delay circuit coupled with said sensor, the delay circuit generating a trigger signal delayed from the intercept time signal; a laser source responsive to a trigger signal to produce a laser pulse; and a system controlling said delay circuit to provide a trigger signal delayed from the intercept time by a first delay time to generate a light pulse that is focused on a droplet and a trigger signal delayed from the intercept time by a second delay time to generate a light pulse which is not focused on a droplet.

    Target for extreme ultraviolet light source
    4.
    发明授权
    Target for extreme ultraviolet light source 有权
    瞄准极紫外光源

    公开(公告)号:US09155179B2

    公开(公告)日:2015-10-06

    申请号:US14550421

    申请日:2014-11-21

    CPC classification number: H05G2/008 G21K5/02 H01S3/10 H05G2/005

    Abstract: Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.

    Abstract translation: 用于形成靶和用于产生极紫外光的技术包括向目标位置释放初始目标材料,目标材料包括当转换成等离子体时发射极紫外(EUV)光的材料; 将第一放大光束引向初始目标材料,第一放大光束具有足以从初始目标材料形成目标材料的集合的能量,每个片段小于初始靶材料并且在空间上 分布在整个半球形体积上; 以及将第二放大光束引导到所述收集件,以将所述目标材料片转换成发射EUV光的等离子体。

    TARGET FOR EXTREME ULTRAVIOLET LIGHT SOURCE
    5.
    发明申请
    TARGET FOR EXTREME ULTRAVIOLET LIGHT SOURCE 有权
    极光超紫外光源的目标

    公开(公告)号:US20140299791A1

    公开(公告)日:2014-10-09

    申请号:US14310972

    申请日:2014-06-20

    CPC classification number: H05G2/008 G21K5/02 H01S3/10 H05G2/005

    Abstract: Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.

    Abstract translation: 用于形成靶和用于产生极紫外光的技术包括向目标位置释放初始目标材料,目标材料包括当转换成等离子体时发射极紫外(EUV)光的材料; 将第一放大光束引向初始目标材料,第一放大光束具有足以从初始目标材料形成目标材料的集合的能量,每个片段小于初始靶材料并且在空间上 分布在整个半球形体积上; 以及将第二放大光束引导到所述收集件,以将所述目标材料片转换成发射EUV光的等离子体。

    BEAM POSITION CONTROL FOR AN EXTREME ULTRAVIOLET LIGHT SOURCE
    8.
    发明申请
    BEAM POSITION CONTROL FOR AN EXTREME ULTRAVIOLET LIGHT SOURCE 有权
    用于极端超紫外光源的光束位置控制

    公开(公告)号:US20150257246A1

    公开(公告)日:2015-09-10

    申请号:US14658417

    申请日:2015-03-16

    CPC classification number: H05G2/008 G21K5/00 G21K5/10 H05G2/003

    Abstract: A system for an extreme ultraviolet light source includes one or more optical elements positioned to receive a reflected amplified light beam and to direct the reflected amplified light beam into first, second, and third channels, the reflected amplified light beam including a reflection of at least a portion of an irradiating amplified light beam that interacts with a target material; a first sensor that senses light from the first channel; a second sensor that senses light from the second channel and the third channel, the second sensor having a lower acquisition rate than the first sensor; and an electronic processor coupled to a computer-readable storage medium, the medium storing instructions that, when executed, cause the processor to: receive data from the first sensor and the second sensor, and determine, based on the received data, a location of the irradiating amplified light beam relative to the target material in more than one dimension.

    Abstract translation: 用于极紫外光源的系统包括一个或多个定位成接收反射放大光束并将反射的放大光束引导到第一,第二和第三通道中的光学元件,反射的放大光束至少包括至少 与目标材料相互作用的照射放大光束的一部分; 感测来自第一通道的光的第一传感器; 第二传感器,其感测来自第二通道和第三通道的光,第二传感器具有比第一传感器低的采集速率; 以及耦合到计算机可读存储介质的电子处理器,所述介质存储指令,所述指令在被执行时使得所述处理器:从所述第一传感器和所述第二传感器接收数据,并且基于所接收的数据确定位置 在多于一个维度上相对于目标材料照射放大的光束。

    TARGET FOR EXTREME ULTRAVIOLET LIGHT SOURCE
    9.
    发明申请
    TARGET FOR EXTREME ULTRAVIOLET LIGHT SOURCE 审中-公开
    极光超紫外光源的目标

    公开(公告)号:US20150076374A1

    公开(公告)日:2015-03-19

    申请号:US14550421

    申请日:2014-11-21

    CPC classification number: H05G2/008 G21K5/02 H01S3/10 H05G2/005

    Abstract: Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.

    Abstract translation: 用于形成靶和用于产生极紫外光的技术包括向目标位置释放初始目标材料,目标材料包括当转换成等离子体时发射极紫外(EUV)光的材料; 将第一放大光束引向初始目标材料,第一放大光束具有足以从初始目标材料形成目标材料的集合的能量,每个片段小于初始靶材料并且在空间上 分布在整个半球形体积上; 以及将第二放大光束引导到所述收集件,以将所述目标材料片转换成发射EUV光的等离子体。

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