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公开(公告)号：US10157855B2
公开(公告)日：2018-12-18
申请号：US14730022
申请日：2015-06-03
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Wei-Hsuan Lee , Chien-Yeh Liu , Sung-Mao Li , Jaw-Ming Ding
IPC: H01L23/552
Abstract: The present disclosure relates to a semiconductor device package and a manufacturing method thereof. The semiconductor device package includes a carrier, at least one electronic component, a first magnetic layer and a second magnetic layer. The carrier has a top surface on which the electronic component is disposed. The first magnetic layer is disposed on the top surface of the carrier and encapsulates the electronic component. The second magnetic layer is disposed on the first magnetic layer and covers a top surface and a lateral surface of the first magnetic layer. A permeability of the first magnetic layer is less than a permeability of the second magnetic layer.
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公开(公告)号：US20180350753A1
公开(公告)日：2018-12-06
申请号：US16058844
申请日：2018-08-08
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Wei-Hsuan LEE , Jaw-Ming Ding , Wei-Yu CHEN
IPC: H01L23/552 , H01L21/48 , H01L23/00 , H01L23/31 , H01L23/498 , H01L21/56
Abstract: A semiconductor package device includes: (1) a substrate having a top surface; (2) a passive component disposed on the substrate and having a top surface; (3) an active component disposed on the substrate and having a top surface; and (4) a package body disposed on the substrate, the package body including a first portion covering the active component and the passive component, and a second portion covering the passive component, wherein a top surface of the second portion of the package body is higher than a top surface of the first portion of the package body, and the first portion and the second portion of the package body include different materials.
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公开(公告)号：US10068854B2
公开(公告)日：2018-09-04
申请号：US15333008
申请日：2016-10-24
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Wei-Hsuan Lee , Jaw-Ming Ding , Wei-Yu Chen
IPC: H01L23/31 , H01L23/522 , H01L23/60 , H01L27/32 , H01L23/552 , H01L23/498 , H01L23/00 , H01L21/48 , H01L21/56
Abstract: A semiconductor package device includes a substrate, a passive component, an active component and a package body. The passive component is disposed on the substrate. The active component is disposed on the substrate. The package body is disposed on the substrate. The package body includes a first portion covering the active component and the passive component, and a second portion covering the passive component. A top surface of the second portion of the package body is higher than a top surface of the first portion of the package body.
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4.发明授权Electronic system—radio frequency power amplifier and method for self-adjusting bias point 有权电子系统 - 射频功率放大器和自调整偏置点的方法公开(公告)号：US09024689B2
公开(公告)日：2015-05-05
申请号：US14083633
申请日：2013-11-19
Applicant: Advanced Semiconductor Engineering Inc.
Inventor： Jaw-Ming Ding , Chien-Yeh Liu
CPC classification number: H03F1/0272 , H03F1/302 , H03F1/32 , H03F1/56 , H03F3/195 , H03F3/245 , H03F2200/18 , H03F2200/222 , H03F2200/387
Abstract: A radio frequency (RF) power amplifier is disclosed. The RF power amplifier includes a bias circuit, an output stage circuit and dynamic bias controlling circuit. The bias circuit receives a system voltage and the bias circuit provides a working voltage according to the system voltage. The output stage circuit receives the working voltage so as to work at an operation bias point. The dynamic bias controlling circuit receives the working voltage and outputs a compensation voltage to the bias circuit according to a variation of the working voltage. When the input power increases and makes the working voltage decreases so as to shift the operation bias point, the bias circuit adjusts the working voltage upward so as to recover the operation bias point according to the compensation voltage received.
Abstract translation: 公开了射频（RF）功率放大器。 RF功率放大器包括偏置电路，输出级电路和动态偏置控制电路。 偏置电路接收系统电压，偏置电路根据系统电压提供工作电压。 输出级电路接收工作电压，以便在操作偏压点工作。 动态偏置控制电路接收工作电压，并根据工作电压的变化向偏置电路输出补偿电压。 当输入功率增加并使工作电压降低以移动工作偏置点时，偏置电路向上调节工作电压，以便根据所接收的补偿电压来恢复工作偏置点。
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公开(公告)号：US10651796B2
公开(公告)日：2020-05-12
申请号：US15887635
申请日：2018-02-02
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Jaw-Ming Ding
Abstract: The present disclosure relates to a power amplifier circuit including a current source, a power control circuit, a current mirror and an output circuit. The current source circuit includes a first transistor and a second transistor. A source of the first transistor is connected to a drain of the second transistor and a gate of the first transistor is connected to a source with the second transistor. The power control circuit is connected to a gate of the second transistor. The current mirror circuit is connected to the gate of the first transistor and a source of the second transistor. The output circuit is connected to the current mirror circuit.
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Patent Agency Ranking
6.发明授权Amplifier circuit, biasing block with output gain compensation thereof, and electronic apparatus 有权放大器电路，具有输出增益补偿的偏置块和电子设备公开(公告)号：US09319001B2
公开(公告)日：2016-04-19
申请号：US14187823
申请日：2014-02-24
Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.
Inventor： Jaw-Ming Ding , Rong-Hsang Ho , Jia-Hong Mou
CPC classification number: H03F1/301 , H03F1/223 , H03F3/193 , H03F2200/18 , H03F2200/447 , H03F2200/451
Abstract: An exemplary embodiment of the present disclosure illustrates an amplifier circuit comprising an amplifier block and a biasing block. The amplifier block is used to receive an input signal and amplify the input signal to generate an output signal. The a biasing block coupled to the amplifier block is used to provide biasing voltages to bias the amplifier block, and compensate an output gain of the amplifier block before the output gain of the amplifier block is compressed, so as to extend a P1 dB compression point of the amplifier block, wherein the biasing currents are substantially independent to temperature and/or system voltage variation.
Abstract translation: 本公开的示例性实施例示出了包括放大器块和偏置块的放大器电路。 放大器块用于接收输入信号并放大输入信号以产生输出信号。 耦合到放大器块的偏置块用于提供偏置电压以偏置放大器块，并且在放大器块的输出增益被压缩之前补偿放大器块的输出增益，以便扩展P1dB压缩点 的放大器块，其中偏置电流基本上独立于温度和/或系统电压变化。
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公开(公告)号：US09166530B2
公开(公告)日：2015-10-20
申请号：US14214983
申请日：2014-03-16
Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.
Inventor： Jaw-Ming Ding , Chien-Yeh Liu
CPC classification number: H03F1/0211 , H03F1/0272 , H03F1/223 , H03F1/301 , H03F3/19 , H03F3/193 , H03F2200/294 , H03F2200/451 , H03F2200/555
Abstract: A low noise amplifier is disclosed. The low noise amplifier comprises a current mirror circuit, a bias circuit, a cascode amplifying circuit and a power gain compensating circuit. The current mirror circuit is used for providing a mapping current. The bias circuit is used for receiving a mapping current and outputting a first bias voltage and a second bias voltage according to the mapping current. The cascode amplifying circuit respectively receives the first bias voltage and the second bias voltage, and accordingly to work at an operation bias point. The power gain compensating circuit is used for receiving a RF output signal and accordingly outputs a gain compensating signal to the current mirror circuit so as to dynamically adjust current value of the mapping current and further to compensates power gain of the low noise amplifier in order to increase linearity.
Abstract translation: 公开了一种低噪声放大器。 低噪声放大器包括电流镜电路，偏置电路，共源共栅放大电路和功率增益补偿电路。 电流镜电路用于提供映射电流。 偏置电路用于接收映射电流，并根据映射电流输出第一偏置电压和第二偏置电压。 共源共栅放大电路分别接收第一偏置电压和第二偏置电压，并因此在工作偏压点工作。 功率增益补偿电路用于接收RF输出信号，并且相应地向电流镜电路输出增益补偿信号，以动态调整映射电流的电流值，并进一步补偿低噪声放大器的功率增益，以便 增加线性度
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公开(公告)号：US09123981B1
公开(公告)日：2015-09-01
申请号：US14266070
申请日：2014-04-30
Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.
Inventor： Chien-Yeh Liu , Wei-Hsuan Lee , Jaw-Ming Ding , Huang-Hua Wen
CPC classification number: H01P5/028
Abstract: A tunable radio frequency (RF) coupler and manufacturing method thereof are provided. The tunable RF coupler includes an insulating layer, a first transmission line and a second transmission line. The second transmission line is disposed corresponding to the first transmission line and the insulating layer is disposed between the first transmission line and the second transmission line. The second transmission line includes a plurality of segments separated from each other and arranged along the extension path of the first transmission line. At least one wire is configured to establish an electrical connection between at least two segments, such that the two segments are electrically conductive to each other through the wire.
Abstract translation: 提供了一种可调谐射频（RF）耦合器及其制造方法。 可调谐RF耦合器包括绝缘层，第一传输线和第二传输线。 第二传输线对应于第一传输线布置，并且绝缘层设置在第一传输线和第二传输线之间。 第二传输线包括彼此分离并沿着第一传输线的延伸路径布置的多个段。 至少一根线被配置成在至少两个段之间建立电连接，使得两个段通过导线相互导电。
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公开(公告)号：US11558017B2
公开(公告)日：2023-01-17
申请号：US16575133
申请日：2019-09-18
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Jaw-Ming Ding
Abstract: A power amplifier circuit includes a current generator and a current mirror driver. The current generator has a first input connected to a first voltage supply and an output configured to generate a first current. The current generator includes a first transistor, a second transistor, a first resistor and a second resistor. The first transistor has an emitter connected to ground. The second transistor has a base connected to a base of the first transistor and an emitter connected to ground. The first resistor is connected between the first voltage supply and a collector of the first transistor. The second resistor is connected between the first voltage supply and a collector of the second transistor. The current mirror drive has a first input connected to the output of the current generator to receive the first current and an output configured to generate a second current.
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公开(公告)号：US10756025B2
公开(公告)日：2020-08-25
申请号：US16058844
申请日：2018-08-08
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Wei-Hsuan Lee , Jaw-Ming Ding , Wei-Yu Chen
IPC: H01L23/552 , H01L23/498 , H01L23/00 , H01L21/48 , H01L21/56 , H01L23/31
Abstract: A semiconductor package device includes: (1) a substrate having a top surface; (2) a passive component disposed on the substrate and having a top surface; (3) an active component disposed on the substrate and having a top surface; and (4) a package body disposed on the substrate, the package body including a first portion covering the active component and the passive component, and a second portion covering the passive component, wherein a top surface of the second portion of the package body is higher than a top surface of the first portion of the package body, and the first portion and the second portion of the package body include different materials.
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