公开(公告)号：US09653415B2

公开(公告)日：2017-05-16

申请号：US14625383

申请日：2015-02-18

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wei-Hsuan Lee ,  Sung-Mao Li ,  Chien-Yeh Liu

IPC: H01L29/66 ,  H01L23/66 ,  H01L23/552 ,  H01L21/768 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/66 ,  H01L21/76838 ,  H01L23/3128 ,  H01L23/552 ,  H01L24/97 ,  H01L2223/6677 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/81

Abstract: The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a semiconductor device, a plurality of electronic components, a first package body, a patterned conductive layer and a feeding element. The semiconductor device and the plurality of electronic components are disposed on the substrate. The first package body covers the semiconductor device but exposes the plurality of electronic components. The patterned conductive layer is formed on the first package body. The feeding element electrically connects the patterned conductive layer to the plurality of electronic components.

公开(公告)号：US20160358862A1

公开(公告)日：2016-12-08

申请号：US14730022

申请日：2015-06-03

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wei-Hsuan Lee ,  Chien-Yeh Liu ,  Sung-Mao Li ,  Jaw-Ming Ding

IPC: H01L23/552

CPC classification number: H01L23/552 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00012

Abstract: The present disclosure relates to a semiconductor device package and a manufacturing method thereof. The semiconductor device package includes a carrier, at least one electronic component, a first magnetic layer and a second magnetic layer. The carrier has a top surface on which the electronic component is disposed. The first magnetic layer is disposed on the top surface of the carrier and encapsulates the electronic component. The second magnetic layer is disposed on the first magnetic layer and covers a top surface and a lateral surface of the first magnetic layer. A permeability of the first magnetic layer is less than a permeability of the second magnetic layer.

Abstract translation: 本公开涉及一种半导体器件封装及其制造方法。 半导体器件封装包括载体，至少一个电子部件，第一磁性层和第二磁性层。 载体具有设置有电子部件的顶面。 第一磁性层设置在载体的顶表面上并封装电子部件。 第二磁性层设置在第一磁性层上并覆盖第一磁性层的顶表面和侧表面。 第一磁性层的磁导率小于第二磁性层的磁导率。

公开(公告)号：US09166530B2

公开(公告)日：2015-10-20

申请号：US14214983

申请日：2014-03-16

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.

Inventor： Jaw-Ming Ding ,  Chien-Yeh Liu

IPC: H04B1/26 ,  H03F1/02 ,  H03F3/19

CPC classification number: H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/301 ,  H03F3/19 ,  H03F3/193 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2200/555

Abstract: A low noise amplifier is disclosed. The low noise amplifier comprises a current mirror circuit, a bias circuit, a cascode amplifying circuit and a power gain compensating circuit. The current mirror circuit is used for providing a mapping current. The bias circuit is used for receiving a mapping current and outputting a first bias voltage and a second bias voltage according to the mapping current. The cascode amplifying circuit respectively receives the first bias voltage and the second bias voltage, and accordingly to work at an operation bias point. The power gain compensating circuit is used for receiving a RF output signal and accordingly outputs a gain compensating signal to the current mirror circuit so as to dynamically adjust current value of the mapping current and further to compensates power gain of the low noise amplifier in order to increase linearity.

Abstract translation: 公开了一种低噪声放大器。 低噪声放大器包括电流镜电路，偏置电路，共源共栅放大电路和功率增益补偿电路。 电流镜电路用于提供映射电流。 偏置电路用于接收映射电流，并根据映射电流输出第一偏置电压和第二偏置电压。 共源共栅放大电路分别接收第一偏置电压和第二偏置电压，并因此在工作偏压点工作。 功率增益补偿电路用于接收RF输出信号，并且相应地向电流镜电路输出增益补偿信号，以动态调整映射电流的电流值，并进一步补偿低噪声放大器的功率增益，以便 增加线性度

公开(公告)号：US09123981B1

公开(公告)日：2015-09-01

申请号：US14266070

申请日：2014-04-30

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.

Inventor： Chien-Yeh Liu ,  Wei-Hsuan Lee ,  Jaw-Ming Ding ,  Huang-Hua Wen

IPC: H01P5/04 ,  H01P5/12 ,  H01P3/08

CPC classification number: H01P5/028

Abstract: A tunable radio frequency (RF) coupler and manufacturing method thereof are provided. The tunable RF coupler includes an insulating layer, a first transmission line and a second transmission line. The second transmission line is disposed corresponding to the first transmission line and the insulating layer is disposed between the first transmission line and the second transmission line. The second transmission line includes a plurality of segments separated from each other and arranged along the extension path of the first transmission line. At least one wire is configured to establish an electrical connection between at least two segments, such that the two segments are electrically conductive to each other through the wire.

Abstract translation: 提供了一种可调谐射频（RF）耦合器及其制造方法。 可调谐RF耦合器包括绝缘层，第一传输线和第二传输线。 第二传输线对应于第一传输线布置，并且绝缘层设置在第一传输线和第二传输线之间。 第二传输线包括彼此分离并沿着第一传输线的延伸路径布置的多个段。 至少一根线被配置成在至少两个段之间建立电连接，使得两个段通过导线相互导电。

公开(公告)号：US09397074B1

公开(公告)日：2016-07-19

申请号：US14700079

申请日：2015-04-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wei-Hsuan Lee ,  Sung-Mao Li ,  Chien-Yeh Liu

IPC: H01L23/48 ,  H01L25/065 ,  H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L21/486 ,  H01L23/295 ,  H01L23/296 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/48 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package includes a substrate, a set of electrical components, a stud, a tapering electrical interconnection and a package body. The electrical components are disposed on a top surface of the substrate. A bottom surface of the stud is disposed on the top surface of the substrate. A bottom surface of the electrical interconnection is disposed at a top surface of the stud. A width of the stud is greater than or equal to a width of the bottom surface of the electrical interconnection. The package body is disposed on the top surface of the substrate, and encapsulates the electrical components, the stud and a portion of the electrical interconnection. The package body exposes a top surface of the electrical interconnection.

Abstract translation: 半导体封装包括基板，一组电气部件，螺柱，锥形电互连和封装体。 电气部件设置在基板的顶表面上。 螺柱的底表面设置在基板的顶表面上。 电互连的底表面设置在螺柱的顶表面。 螺柱的宽度大于或等于电互连的底表面的宽度。 封装体设置在基板的顶表面上，并且封装电气部件，螺柱和电互连的一部分。 封装体露出电互连的顶表面。

公开(公告)号：US09148097B2

公开(公告)日：2015-09-29

申请号：US14098883

申请日：2013-12-06

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.

Inventor： Jaw-Ming Ding ,  Chien-Yeh Liu

IPC: H03G3/10 ,  H03F3/04 ,  H03F3/191 ,  H03F1/02

CPC classification number: H03F3/191 ,  H03F1/0266

Abstract: A radio frequency (RF) power amplifier is disclosed. The RF power amplifier includes a bias circuit, an output stage circuit and dynamic bias controlling circuit. The bias circuit receives a first system voltage and provides a working voltage accordingly. The output stage circuit receives the working voltage so as to work at an operation bias point. The dynamic bias controlling circuit detects a RF input signal and outputs a compensation voltage to the bias circuit according to variation of the RF input signal, wherein the dynamic bias controlling circuit is an open loop configuration. When an input power of the RF input signal increases and makes the working voltage decreases so as to shift the operation bias point, the bias circuit adjusts the working voltage upward so as to recover or enhance the operation bias point according to the compensation voltage received.

Abstract translation: 公开了射频（RF）功率放大器。 RF功率放大器包括偏置电路，输出级电路和动态偏置控制电路。 偏置电路接收第一系统电压并相应地提供工作电压。 输出级电路接收工作电压，以便在操作偏压点工作。 动态偏置控制电路检测RF输入信号，并根据RF输入信号的变化向偏置电路输出补偿电压，其中动态偏置控制电路是开环配置。 当RF输入信号的输入功率增加并且使工作电压降低以便移动操作偏置点时，偏置电路向上调整工作电压，以便根据所接收的补偿电压来恢复或增强操作偏压点。

公开(公告)号：US10157855B2

公开(公告)日：2018-12-18

申请号：US14730022

申请日：2015-06-03

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wei-Hsuan Lee ,  Chien-Yeh Liu ,  Sung-Mao Li ,  Jaw-Ming Ding

IPC: H01L23/552

Abstract: The present disclosure relates to a semiconductor device package and a manufacturing method thereof. The semiconductor device package includes a carrier, at least one electronic component, a first magnetic layer and a second magnetic layer. The carrier has a top surface on which the electronic component is disposed. The first magnetic layer is disposed on the top surface of the carrier and encapsulates the electronic component. The second magnetic layer is disposed on the first magnetic layer and covers a top surface and a lateral surface of the first magnetic layer. A permeability of the first magnetic layer is less than a permeability of the second magnetic layer.

公开(公告)号：US09024689B2

公开(公告)日：2015-05-05

申请号：US14083633

申请日：2013-11-19

Applicant: Advanced Semiconductor Engineering Inc.

Inventor： Jaw-Ming Ding ,  Chien-Yeh Liu

IPC: H03G3/10 ,  H03F1/02 ,  H03F1/30 ,  H03F1/32 ,  H03F1/56 ,  H03F3/195 ,  H03F3/24

CPC classification number: H03F1/0272 ,  H03F1/302 ,  H03F1/32 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/18 ,  H03F2200/222 ,  H03F2200/387

Abstract: A radio frequency (RF) power amplifier is disclosed. The RF power amplifier includes a bias circuit, an output stage circuit and dynamic bias controlling circuit. The bias circuit receives a system voltage and the bias circuit provides a working voltage according to the system voltage. The output stage circuit receives the working voltage so as to work at an operation bias point. The dynamic bias controlling circuit receives the working voltage and outputs a compensation voltage to the bias circuit according to a variation of the working voltage. When the input power increases and makes the working voltage decreases so as to shift the operation bias point, the bias circuit adjusts the working voltage upward so as to recover the operation bias point according to the compensation voltage received.

Abstract translation: 公开了射频（RF）功率放大器。 RF功率放大器包括偏置电路，输出级电路和动态偏置控制电路。 偏置电路接收系统电压，偏置电路根据系统电压提供工作电压。 输出级电路接收工作电压，以便在操作偏压点工作。 动态偏置控制电路接收工作电压，并根据工作电压的变化向偏置电路输出补偿电压。 当输入功率增加并使工作电压降低以移动工作偏置点时，偏置电路向上调节工作电压，以便根据所接收的补偿电压来恢复工作偏置点。