公开(公告)号：US06155202A

公开(公告)日：2000-12-05

申请号：US199944

申请日：1998-11-25

申请人： Akira Nakano ,  Sung Chul Kim ,  Koichi Fukuda ,  Yasuhiro Takeda ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

发明人： Akira Nakano ,  Sung Chul Kim ,  Koichi Fukuda ,  Yasuhiro Takeda ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

IPC分类号： H01J37/32 ,  C23C16/00 ,  H01J7/24 ,  H01J21/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： In a plasma processing apparatus, in a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode, one of the two electrodes which form a tuning capacitor also serves as the plasma excitation electrode. Alternatively, in a plasma processing apparatus, the side wall of a housing made from an electrically conductive member and accommodating a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode and a feeder for supplying high-frequency electric power from the high-frequency power source to the plasma excitation electrode through the matching circuit is formed not in parallel to the feeder.

摘要翻译： 在等离子体处理装置中，在高频电源和等离子体激励电极之间插入用于实现高频电源和等离子体激励电极之间的阻抗匹配的匹配电路中，形成调谐电容器的两个电极之一 也用作等离子体激发电极。 或者，在等离子体处理装置中，由导电构件制成的壳体的侧壁，并且容纳插入在高频电源和等离子体激励电极之间的匹配电路，以实现高频电源与高频电源之间的阻抗匹配 等离子体激励电极和用于通过匹配电路从高频电源向等离子体激励电极提供高频电力的馈线形成为不与馈线并联。

公开(公告)号：US06270618B1

公开(公告)日：2001-08-07

申请号：US09205800

申请日：1998-12-04

申请人： Akira Nakano ,  Sung Chul Kim ,  Koichi Fukuda ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

发明人： Akira Nakano ,  Sung Chul Kim ,  Koichi Fukuda ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

IPC分类号： C23F102

CPC分类号： H01J37/32174 ,  C23C16/4405 ,  H01J37/32082

摘要： A plasma processing apparatus is provided which does not require replacement of a band eliminator according to a frequency used, which is capable of performing chamber cleaning without replacing a resonance circuit, and which is capable of performing plasma cleaning of the inside of the chamber without using a bellows. The plasma processing apparatus includes a resonance circuit (band eliminator) for causing series resonance with a microwave circuit formed of at least a susceptor electrode and a processing chamber in order to trap plasma between a plasma excitation electrode and the susceptor electrode when the surface of a workpiece placed on the susceptor electrode is processed by plasma generated between the plasma excitation electrode and the susceptor electrode, which are provided inside the processing chamber; and for causing parallel resonance with the microwave circuit in order to diffuse plasma inside the processing chamber when performing plasma cleaning.

摘要翻译： 提供一种等离子体处理装置，其不需要根据所使用的频率来更换带除器，其能够执行腔室清洁而不更换谐振电路，并且能够在不使用腔室内进行等离子体清洁室内 一个波纹管。 等离子体处理装置包括用于与由至少一个基座电极和一个处理室形成的微波电路进行串联谐振的谐振电路（去波器），以便在等离子体激发电极和基座电极之间捕获等离子体时 放置在基座电极上的工件通过设置在处理室内部的等离子体激发电极和基座电极之间产生的等离子体进行处理; 并且用于与微波电路并联谐振，以便在进行等离子体清洗时在等离子体清洗中扩散处理室内的等离子体。

公开(公告)号：US06349670B1

公开(公告)日：2002-02-26

申请号：US09442539

申请日：1999-11-18

申请人： Akira Nakano ,  Koichi Fukuda ,  Sung Chul Kim ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

发明人： Akira Nakano ,  Koichi Fukuda ,  Sung Chul Kim ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

IPC分类号： C23C1600

CPC分类号： H01J37/32082 ,  G01R1/06772 ,  G01R27/02 ,  H01J37/32935

摘要： The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.

摘要翻译： 本发明提供一种等离子体设备，其优点在于，与常规等离子体设备相比，阻抗较小，对频率的依赖性低，功耗效率高，成膜速度更快，膜质量 高。 金属板在室壁与与室相同的DC电位的电极的屏蔽之间交流短路。

公开(公告)号：US5550091A

公开(公告)日：1996-08-27

申请号：US437606

申请日：1995-05-09

申请人： Koichi Fukuda ,  Tomofumi Oba ,  Masanori Miyazaki ,  Hirofumi Fukui ,  Chisato Iwasaki ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Masaru Kubota ,  Hitoshi Kitagawa ,  Akira Nakano ,  Osamu Yoshida

发明人： Koichi Fukuda ,  Tomofumi Oba ,  Masanori Miyazaki ,  Hirofumi Fukui ,  Chisato Iwasaki ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Masaru Kubota ,  Hitoshi Kitagawa ,  Akira Nakano ,  Osamu Yoshida

IPC分类号： C23C14/06 ,  H01L21/02 ,  H01L21/28 ,  H01L21/31 ,  H01L21/318 ,  H01L21/331 ,  H01L21/336

CPC分类号： C23C14/0652 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/28008 ,  H01L21/3185 ,  H01L28/40 ,  H01L29/66765

摘要： There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.

摘要翻译： 提供了一种使用具有优异的介电电压的单层结构的氮化硅绝缘膜的TFT的电子器件，以及可靠地制造该电子器件的方法。 在电子设备中，在电绝缘基板的表面上沉积导电布线图案，并且形成绝缘层以覆盖布线图案和基板。 绝缘层由氮化硅绝缘膜制成。 布线图案和基板之间的接触角θ等于60°以上，氮化硅绝缘膜的厚度Tn1的值Tn1 / Tg和布线图案的厚度Tg等于2以上。 由于布线图案的台阶和布线图案的上端而形成的氮化硅膜的上升起始位置和Tn1之间的水平距离Tn2为0.6

公开(公告)号：US5623161A

公开(公告)日：1997-04-22

申请号：US442906

申请日：1995-05-17

申请人： Koichi Fukuda ,  Tomofumi Oba ,  Chisato Iwasaki ,  Yasuhiko Kasama ,  Tadahiro Ohmi

发明人： Koichi Fukuda ,  Tomofumi Oba ,  Chisato Iwasaki ,  Yasuhiko Kasama ,  Tadahiro Ohmi

IPC分类号： H01L21/318 ,  G02F1/1362 ,  H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L23/29 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L23/58

CPC分类号： H01L23/291 ,  H01L21/28008 ,  H01L21/76801 ,  H01L29/4908 ,  H01L29/66765 ,  G02F1/1362 ,  H01L2924/0002 ,  H01L2924/09701

摘要： An electronic element having a sufficient dielectric strength remarkably superior to any of the conventional ones. In this element, a conductive wire pattern is formed on the surface of a substrate which is insulative at least in its surface, and an insulating layer is so formed as to cover the substrate and the wire pattern either partially or entirely. The insulating layer is composed of a silicon nitride film where the oxygen content is less than 10 atomic percent at least in the vicinity of a step portion of the wire pattern. There is also provided a method of producing such electronic element, wherein the insulating layer is formed by plasma enhanced CVD under the conditions that the following relationship among a film forming temperature T (.degree. C.), an ion flux I (A) and a film forming speed v (nm/min): T.gtoreq.-651 (I/v)+390, 150.ltoreq.T.ltoreq.350 (where the ion flux denotes the current (A) per 60.times.60 cm.sup.2). According to this method, an insulating film of a high withstand voltage with a great dielectric strength can be obtained stably at a high yield rate.

摘要翻译： 具有显着优于常规电介质的电介质强度的电子元件。 在该元件中，在至少在其表面上绝缘的基板的表面上形成导线图案，并且形成绝缘层以部分或全部覆盖基板和线图案。 绝缘层由至少在导线图案的台阶附近的氧含量小于10原子％的氮化硅膜构成。 还提供了一种制造这种电子元件的方法，其中通过等离子体增强CVD形成绝缘层，条件是成膜温度T（℃），离子通量I（A）和 成膜速度v（nm / min）：T> / = - 651（I / V）+390,150

公开(公告)号：US5570031A

公开(公告)日：1996-10-29

申请号：US336903

申请日：1994-11-10

申请人： Makoto Sasaki ,  Hirofumi Fukui ,  Masami Aihara ,  Koichi Fukuda ,  Yasuhiko Kasama ,  Tadahiro Ohmi

发明人： Makoto Sasaki ,  Hirofumi Fukui ,  Masami Aihara ,  Koichi Fukuda ,  Yasuhiko Kasama ,  Tadahiro Ohmi

IPC分类号： H01L21/302 ,  G01R29/12 ,  G01R31/28 ,  H01L21/203 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/66 ,  G01R31/302 ,  G01R19/00

CPC分类号： G01R29/12 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002

摘要： There is provided a surface potential measuring apparatus cable of accurately measuring the potential of a substrate regardless of the material of the substrate, and a plasma equipment capable of accurately measuring and controlling ion energy. The substrate surface potential measuring apparatus measures the surface potential of a substrate in a plasma processing apparatus and includes a terminal electrically connected to a suscepter electrode for holding the substrate, a first condenser disposed between the terminal and the ground and a potential measuring device for measuring the potential of the terminal. The surface potential of the substrate is found from the potential of the suscepter electrode measured by the potential measuring means.

摘要翻译： 提供了一种能够精确地测量衬底的电位的表面电位测量装置电缆，而不管衬底的材料如何，以及能够精确地测量和控制离子能量的等离子体设备。 基板表面电位测量装置测量等离子体处理装置中的基板的表面电位，并且包括电连接到用于保持基板的可变电极的端子，设置在端子和地之间的第一冷凝器和用于测量的电位测量装置 终端的潜力。 基于由电位测量装置测量的电容器的电位，找到衬底的表面电位。

公开(公告)号：US06274040B1

公开(公告)日：2001-08-14

申请号：US08811800

申请日：1997-03-06

申请人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Nakano ,  Akira Abe ,  Tadahiro Ohmi

发明人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Nakano ,  Akira Abe ,  Tadahiro Ohmi

IPC分类号： C02F148

CPC分类号： C02F1/48 ,  C02F2103/04 ,  Y10S210/90

摘要： There are provided a method and an apparatus for removing electrostatic charges from high resistivity liquid. An insulating film is formed on the surface of a conductive element which is in contact with the high resistivity liquid wherein the insulating film has such a thickness that a tunneling current may flow through the insulating film, thereby preventing the highly purified high resistivity liquid from being contaminated, as well as from becoming acid. Thus, objects to be treated with the high resistivity liquid become free of electrostatic charges without any contamination.

摘要翻译： 提供了一种从高电阻率液体中去除静电电荷的方法和装置。 在与高电阻率液体接触的导电元件的表面上形成绝缘膜，其中绝缘膜具有使隧道电流可以流过绝缘膜的厚度，从而防止高度纯化的高电阻率液体 污染，以及变酸。 因此，用高电阻率液体处理的物体没有静电电荷而没有任何污染。

公开(公告)号：US5480563A

公开(公告)日：1996-01-02

申请号：US219154

申请日：1994-03-29

申请人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Nakano ,  Akira Abe ,  Tadahiro Ohmi

发明人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Nakano ,  Akira Abe ,  Tadahiro Ohmi

IPC分类号： H05F3/00 ,  C02F1/48 ,  H05F3/02

CPC分类号： C02F1/48 ,  C02F2103/04 ,  Y10S210/90

摘要： There are provided a method and an apparatus for removing electrostatic charges from high resistivity liquid. An insulating film is formed on the surface of a conductive element which is in contact with the high resistivity liquid wherein the insulating film has such a thickness that a tunneling current may flow through the insulating film, thereby preventing the highly purified high resistivity liquid from being contaminated, as well as from becoming acid. Thus, objects to be treated with the high resistivity liquid become free of electrostatic charges without any contamination.

摘要翻译： 提供了一种从高电阻率液体中去除静电电荷的方法和装置。 在与高电阻率液体接触的导电元件的表面上形成绝缘膜，其中绝缘膜具有使隧道电流可以流过绝缘膜的厚度，从而防止高度纯化的高电阻率液体 污染，以及变酸。 因此，用高电阻率液体处理的物体没有静电电荷而没有任何污染。

公开(公告)号：US5681487A

公开(公告)日：1997-10-28

申请号：US499538

申请日：1995-07-07

申请人： Hitoshi Seki ,  Chisato Iwasaki ,  Akane Sekiya ,  Yasuhiko Kasama ,  Tadahiro Ohmi

发明人： Hitoshi Seki ,  Chisato Iwasaki ,  Akane Sekiya ,  Yasuhiko Kasama ,  Tadahiro Ohmi

IPC分类号： G03F7/42 ,  H01L21/027 ,  G03C11/00

CPC分类号： G03F7/42

摘要： The present invention provides a method of removing a photoresist film, which exhibits the high ability to remove photoresist and excellent safety and handling properties such as workability, In the removing method, the photoresist film is removed by chemical decomposition in an inorganic aqueous solution under ultraviolet-light irradiation. The inorganic aqueous solution is an aqueous solution of peroxomonosulfate or an aqueous solution containing 4.5 to 36 wt % of sulfuric acid and 0.05 to 0.8 wt % of hydrogen peroxide.

摘要翻译： 本发明提供一种去除光致抗蚀剂膜的方法，其具有高的去除光致抗蚀剂的能力和优异的安全性和操作性能如可加工性。在去除方法中，通过在紫外线下的无机水溶液中通过化学分解除去光致抗蚀剂膜 光线照射。 无机水溶液是含硫酸盐的水溶液或含有4.5〜36重量％的硫酸和0.05〜0.8重量％的过氧化氢的水溶液。

公开(公告)号：USRE42566E1

公开(公告)日：2011-07-26

申请号：US10439658

申请日：2003-05-15

申请人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Abe ,  Oh Eui Yeol ,  Tadahiro Ohmi ,  Takashi Imaoka ,  Masayuki Toda

发明人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Abe ,  Oh Eui Yeol ,  Tadahiro Ohmi ,  Takashi Imaoka ,  Masayuki Toda

IPC分类号： B08B3/12

CPC分类号： H01L21/6708 ,  B08B3/022 ,  B08B3/041 ,  B08B3/123 ,  B08B2203/0288 ,  H01L21/67051

摘要： The wet treatment liquid feed nozzle of the invention comprises an introducing path 10 having an introducing port 7, a discharging path 12 having a discharging port 15, a crossing section 14 formed by causing the introducing path 10 and the discharging path 12 to cross at the other ends thereof, a nozzle assembly 50 having an opening section 6 opening to an object to be treated 1, provided at the crossing section 14, and pressure control means 13, for controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treated 1 and the atmospheric pressure provided at least on the discharging path 12 side so that the wet treatment liquid having been in contact with the object to be treated 1 via the opening section 6 does not flow to outside the discharging path 12.

摘要翻译： 本发明的湿处理液体供给喷嘴包括具有引入口7的引入路径10，具有排出口15的排出路径12，通过使引入路径10和排出路径12在 设置在交叉部分14处的具有开口部分6的开口部分6的喷嘴组件50，以及压力控制装置13，用于控制接触到的湿处理液体的压力之间的差异 待处理物体1和至少设置在排出路径12侧的大气压力，使得经由开口部6与待处理物体1接触的湿处理液体不流到排出路径12的外部 。