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    Thin film-forming method and thin film-forming apparatus therefor
    1.
    发明授权
    Thin film-forming method and thin film-forming apparatus therefor 失效
    薄膜形成方法及其薄膜形成装置

    公开(公告)号：US6086699A

    公开(公告)日：2000-07-11

    申请号：US79112

    申请日：1998-05-14

    申请人： Akira Nakashima ,  Atsushi Tonai ,  Ryo Muraguchi ,  Michio Komatsu ,  Katsuyuki Machida ,  Hakaru Kyuragi ,  Kazuo Imai

    发明人： Akira Nakashima ,  Atsushi Tonai ,  Ryo Muraguchi ,  Michio Komatsu ,  Katsuyuki Machida ,  Hakaru Kyuragi ,  Kazuo Imai

    IPC分类号： H01L21/3205 ,  B05D1/28 ,  H01L21/00 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  B32B33/00 ,  B05D5/00 ,  B05D7/24 ,  B05D7/26

    CPC分类号： H01L21/6715 ,  B05D1/28 ,  H01L21/67132

    摘要： Disclosed is a thin film-forming apparatus comprising a coating liquid feed means 6 for feeding a thin film-forming coating liquid onto a surface of a transfer roll 2, a transfer means 4 including the transfer roll 2 a surface of which is coated with the thin film-forming coating liquid fed from the coating liquid feed means to form a transfer thin film 8, and a substrate conveying means 16 for continuously conveying a substrate 9 under the transfer roll, a surface of said substrate 9 to be provided with a thin film, wherein the transfer means is so fabricated that the transfer roll surface having the transfer thin film thereon is closely contacted with the surface of the substrate conveyed by the substrate conveying means, to transfer the transfer thin film formed on the transfer roll surface to the substrate surface. Also disclosed is a thin film-forming method using the thin film-forming apparatus. By the apparatus and the method, formation of a planar thin film on a substrate such as a semiconductor wafer can be carried out continuously, stably and at a low cost, and quality lowering of the thin film and property change thereof with time caused by adherence of impurities to the thin film or contamination of the thin film with impurities are avoidable. Moreover, the apparatus and the method are applicable to large-sized substrates.

    摘要翻译： 公开了一种薄膜形成装置，其包括用于将薄膜形成涂布液供给到转印辊2的表面上的涂布液供给装置6，包括转印辊2的转印装置4，转印辊2的表面涂覆有 从涂布液供给装置供给的薄膜形成用涂布液，形成转印薄膜8，以及用于在转印辊下连续输送基板9的基板输送机构16，所述基板9的表面设置有薄的 膜，其中转印装置被制造成使得其上具有转印薄膜的转印辊表面与由基板输送装置输送的基板的表面紧密接触，以将形成在转印辊表面上的转印薄膜转印到 基材表面。 还公开了使用该薄膜形成装置的薄膜形成方法。 通过该装置和方法，可以连续，稳定地且低成本地在诸如半导体晶片的基板上形成平面薄膜，并且随着粘附时间的推移，薄膜的质量降低及其性能变化 杂质对薄膜的污染或杂质污染薄膜是可以避免的。 此外，该装置和方法适用于大尺寸基板。

    Substrate flattening method and film-coated substrate made thereby
    2.
    发明授权
    Substrate flattening method and film-coated substrate made thereby 有权
    底材平整方法和由此制成的薄膜包衣基材

    公开(公告)号：US06340641B1

    公开(公告)日：2002-01-22

    申请号：US09297343

    申请日：1999-04-29

    申请人： Ryo Muraguchi ,  Akira Nakashima ,  Atsushi Tonai ,  Michio Kimatsu ,  Katsuyuki Machida ,  Hakaru Kyuragi ,  Kazuo Imai

    发明人： Ryo Muraguchi ,  Akira Nakashima ,  Atsushi Tonai ,  Michio Kimatsu ,  Katsuyuki Machida ,  Hakaru Kyuragi ,  Kazuo Imai

    IPC分类号： H01L2131

    CPC分类号： B05D1/286 ,  G11B5/8404

    摘要： The present invention provides a method of easily planarizing the uneven surface of a substrate having an uneven surface. This method comprises the steps of forming a coating film containing spherical fine particles on a surface of a smooth substrate; sticking the surface of the smooth substrate provided with the coating film containing spherical fine particles to the uneven surface of a substrate having an uneven surface; and transferring the coating film containing spherical fine particles to the uneven surface of the substrate so that the uneven surface is planarized.

    摘要翻译： 本发明提供一种容易平坦化具有不平坦表面的基板的凹凸表面的方法。 该方法包括在平滑基材的表面上形成含有球状微粒的涂膜的步骤; 将具有含有球状微粒的涂膜的光滑基板的表面粘附到具有不平坦表面的基板的凹凸表面上; 并将含有球状微粒的涂膜转印到基板的不平坦表面上，使得凹凸表面平坦化。

    Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film
    3.
    发明授权
    Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film 有权
    形成具有低介电常数的含二氧化硅的涂膜和涂覆有这种膜的半导体衬底的方法

    公开(公告)号：US06599846B2

    公开(公告)日：2003-07-29

    申请号：US09914418

    申请日：2001-08-28

    申请人： Michio Komatsu ,  Akira Nakashima ,  Miki Egami ,  Ryo Muraguchi

    发明人： Michio Komatsu ,  Akira Nakashima ,  Miki Egami ,  Ryo Muraguchi

    IPC分类号： H01L2131

    CPC分类号： H01L21/316

    摘要： The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method. The above step (b) for the thermal treatment is preferably conducted at 150 to 350° C. for 1 to 3 minutes in an air atmosphere. Also, the above curing step (c) is preferably conducted by placing the semiconductor substrate on a hot plate kept at 350 to 450° C. According to the present invention, a semiconductor substrate coated with a silica-containing film having characteristics of a low-dielectric constant of 3 or less, a low moisture adsorptivity and high film strength without causing any damage to the metal wiring arranged on the substrate, can be obtained steadily.

    摘要翻译： 本发明提供一种在半导体基板上稳定地形成具有3以下的低介电常数的含二氧化硅的膜的方法，该方法包括以下步骤：（a）将形成含二氧化硅的膜的涂布液涂布到低 （b）在50至350℃下加热涂覆的膜，然后（c）在350至450℃下在含有500至500℃的惰性气体气氛中固化如此处理的膜 15000体积ppm的氧，并且还提供具有通过上述方法形成的含二氧化硅的半导体衬底。用于热处理的上述步骤（b）优选在150-350℃下进行1至3分钟 在空气气氛中。 此外，上述固化步骤（c）优选通过将半导体衬底放置在保持在350至450℃的热板上来进行。根据本发明，涂覆了具有低特性的含二氧化硅的膜的半导体衬底 - 可以稳定地获得3或更小的吸湿性和低膜强度，而不会对布置在基底上的金属布线造成任何损坏。

    Production of short fiber silica
    4.
    发明授权
    Production of short fiber silica 有权
    生产短纤维二氧化硅

    公开(公告)号：US06455154B1

    公开(公告)日：2002-09-24

    申请号：US09560984

    申请日：2000-04-28

    申请人： Akira Nakashima ,  Kazuaki Inoue ,  Ryo Muraguchi ,  Michio Komatsu

    发明人： Akira Nakashima ,  Kazuaki Inoue ,  Ryo Muraguchi ,  Michio Komatsu

    IPC分类号： D02G300

    CPC分类号： C08G77/02 ,  C09D183/02 ,  Y10T428/2904 ,  Y10T428/2907 ,  Y10T428/2918 ,  Y10T428/31663

    摘要： A coating liquid for forming porous silica coating, comprising a product of reaction between a short fiber silica and a hydrolyzate of an alkoxysilane of the formula XnSi(OR)4-n or a halogenated silane of the formula XnSiX′4-n (in the formula, X represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; X′ represents a chlorine atom or a bromine atom; and n is an integer of 0 to 3). A coated substrate comprising a porous silica coating film formed from the above coating liquid for forming porous silica coating. A short fiber silica having an average diameter (D) of 10 to 30 nm, a length (L) of 30 to 100 nm and an aspect ratio (L/D) of 3 to 10. The above coating liquid for forming porous silica coating enables forming an insulating film which is excellent in adherence to a substrate surface, mechanical strength, chemical resistance and crack resistance and enables flattening irregularities of a substrate surface to a high degree. The coating film of the coated substrate has the above excellent properties.

    摘要翻译： 一种用于形成多孔二氧化硅涂层的涂布液，包括短纤维二氧化硅和式XnSi（OR）4-n的烷氧基硅烷的水解产物或式XnSiX'4-n的卤代硅烷（在 式中，X表示氢原子，氟原子，碳原子数1〜8的烷基，芳基或乙烯基; R表示氢原子，碳原子数1〜8的烷基，芳基或 乙烯基; X'表示氯原子或溴原子，n表示0〜3的整数。 一种涂覆基材，包括由用于形成多孔二氧化硅涂层的上述涂布液形成的多孔二氧化硅涂膜。 平均直径（D）为10〜30nm，长度（L）为30〜100nm，纵横比（L / D）为3〜10的短纤维二氧化硅。上述用于形成多孔二氧化硅涂层的涂布液 能够形成对基板表面的粘附性优异的机械强度，耐化学性和抗裂纹性的绝缘膜，能够高度地使基板表面变得平坦化。 涂布基材的涂膜具有上述优异的性能。

    Coating liquid for forming porous silica coating, coated substrate and short fiber silica
    5.
    发明授权
    Coating liquid for forming porous silica coating, coated substrate and short fiber silica 有权
    用于形成多孔二氧化硅涂层，涂布基材和短纤维二氧化硅的涂布液

    公开(公告)号：US6083314A

    公开(公告)日：2000-07-04

    申请号：US130043

    申请日：1998-08-06

    申请人： Akira Nakashima ,  Kazuaki Inoue ,  Ryo Muraguchi ,  Michio Komatsu

    发明人： Akira Nakashima ,  Kazuaki Inoue ,  Ryo Muraguchi ,  Michio Komatsu

    IPC分类号： C08L83/04 ,  C08G77/02 ,  C09D7/12 ,  C09D183/02 ,  C09D183/04 ,  C09D183/07 ,  C09D183/05 ,  C09D183/06 ,  C09D183/08

    CPC分类号： C08G77/02 ,  C09D183/02 ,  Y10T428/2904 ,  Y10T428/2907 ,  Y10T428/2918 ,  Y10T428/31663

    摘要： A coating liquid for forming porous silica coating, comprising a product of reaction between a short fiber silica and a hydrolyzate of an alkoxysilane of the formula X.sub.n Si(OR).sub.4-n or a halogenated silane of the formula X.sub.n SiX'.sub.4-n (in the formula, X represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; X' represents a chlorine atom or a bromine atom; and n is an integer of 0 to 3). A coated substrate comprising a porous silica coating film formed from the above coating liquid for forming porous silica coating. A short fiber silica having an average diameter (D) of 10 to 30 nm, a length (L) of 30 to 100 nm and an aspect ratio (L/D) of 3 to 10. The above coating liquid for forming porous silica coating enables forming an insulating film which is excellent in adherence to a substrate surface, mechanical strength, chemical resistance and crack resistance and enables flattening irregularities of a substrate surface to a high degree. The coating film of the coated substrate has the above excellent properties.

    摘要翻译： 一种用于形成多孔二氧化硅涂层的涂布液，包括短纤维二氧化硅和式XnSi（OR）4-n的烷氧基硅烷的水解产物或式XnSiX'4-n的卤代硅烷（在 式中，X表示氢原子，氟原子，碳原子数1〜8的烷基，芳基或乙烯基; R表示氢原子，碳原子数1〜8的烷基，芳基或 乙烯基; X'表示氯原子或溴原子，n表示0〜3的整数。 一种涂覆基材，包括由用于形成多孔二氧化硅涂层的上述涂布液形成的多孔二氧化硅涂膜。 平均直径（D）为10〜30nm，长度（L）为30〜100nm，纵横比（L / D）为3〜10的短纤维二氧化硅。上述用于形成多孔二氧化硅涂层的涂布液 能够形成对基板表面的粘附性优异的机械强度，耐化学性和抗裂纹性的绝缘膜，能够高度地使基板表面变得平坦化。 涂布基材的涂膜具有上述优异的性能。

    Antireflection laminate
    7.
    发明申请
    Antireflection laminate 审中-公开
    防反射层压板

    公开(公告)号：US20060269733A1

    公开(公告)日：2006-11-30

    申请号：US10569363

    申请日：2004-08-26

    申请人： Utako Mizuno ,  Midori Nakajo ,  Seiji Shinohara ,  Toshio Yoshihara ,  Hiroyasu Nishida ,  Ryo Muraguchi ,  Masafumi Hirai

    发明人： Utako Mizuno ,  Midori Nakajo ,  Seiji Shinohara ,  Toshio Yoshihara ,  Hiroyasu Nishida ,  Ryo Muraguchi ,  Masafumi Hirai

    IPC分类号： B32B3/26

    CPC分类号： C09D5/006 ,  B05D3/06 ,  C08K3/36 ,  C08K7/26 ,  C08K9/06 ,  C09D4/00 ,  C09D7/61 ,  C09D7/67 ,  C09D7/70 ,  G02B1/111 ,  Y10T428/249953

    摘要： There is provided an antireflective laminate having a low refractive index and excellent mechanical strength, which comprises a coating layer of an ionizing radiation curing-type resin composition comprising ionizing radiation curing group-containing hollow silica fine particles. The antireflective laminate comprises a light transparent base material and at least a low refractive index layer having a refractive index of not more than 1.45 provided on the light transparent base material, wherein the low refractive index layer comprises an ionizing radiation curing-type resin composition and silica fine particles having an outer shell layer with the interior of the silica fine particles being porous or void, and, for a part or all of the silica fine particles, at least a part of the surface of the silica fine particle has been treated with an ionizing radiation curing group-containing silane coupling agent.

    摘要翻译： 提供了具有低折射率和优异的机械强度的抗反射层压体，其包括含有电离辐射固化基团的中空二氧化硅细颗粒的电离辐射固化型树脂组合物的涂层。 所述抗反射层叠体包含透光性基材和至少具有设在所述透光性基材上的折射率为1.45以下的低折射率层，其中所述低折射率层包含电离辐射固化型树脂组合物和 具有外壳层的二氧化硅细颗粒，二氧化硅细颗粒的内部是多孔的或空隙的，并且对于二氧化硅微粒的一部分或全部，二氧化硅细颗粒的至少一部分表面已经用 含电离辐射固化基团的硅烷偶联剂。

    Chain inorganic oxide fine particle groups, process for preparing dispersion of the fine particle groups, and uses of the fine particle groups
    8.
    发明申请
    Chain inorganic oxide fine particle groups, process for preparing dispersion of the fine particle groups, and uses of the fine particle groups 失效
    链状无机氧化物微粒子群，微粒子群分散体的制造方法，细粒子群的使用

    公开(公告)号：US20050116205A1

    公开(公告)日：2005-06-02

    申请号：US10981845

    申请日：2004-11-05

    申请人： Ryo Muraguchi ,  Masayuki Matsuda ,  Hiroyasu Nishida ,  Toshiharu Hirai ,  Mitsuaki Kumazawa

    发明人： Ryo Muraguchi ,  Masayuki Matsuda ,  Hiroyasu Nishida ,  Toshiharu Hirai ,  Mitsuaki Kumazawa

    IPC分类号： B01J2/00 ,  B01J2/20 ,  C01B33/146 ,  C01B33/26 ,  C01F7/02 ,  C01G30/00 ,  H01C17/065 ,  H01C1/00

    CPC分类号： C01G30/005 ,  B82Y30/00 ,  C01B33/146 ,  C01F7/02 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/40 ,  H01C17/06533

    摘要： A chain antimony oxide fine particle group comprising antimony oxide fine particles which have an average particle diameter of 5 to 50 nm, are connected in the form of a chain and have an average connection number of 2 to 30 and preferably used for forming a hard coating film. The fine particle group can be prepared by a process comprising treating an alkali antimonate aqueous solution with a cation exchange resin to prepare an antimonic acid (gel) dispersion and then treating the dispersion with an anion exchange resin and/or adding a base to the dispersion. Also provided is a substrate with a film comprising a substrate and a hard coating film. The hard coating film includes a chain inorganic oxide fine particle group, in which inorganic oxide fine particles of 2 to 30 on the average are connected in the form of a chain, and a matrix. The inorganic oxide particles may be silica particles, silica-alumina particles being preferable, and porous particles and/or hollow particles having a cavity inside being more preferable.

    摘要翻译： 包含平均粒径为5〜50nm的氧化锑微粒的链状氧化锑微粒组以链状连接，平均连接数为2〜30，优选用于形成硬涂层 电影。 微粒子组可以通过以下方法制备，该方法包括用阳离子交换树脂处理碱式锑酸盐水溶液以制备锑酸（凝胶）分散体，然后用阴离子交换树脂处理分散体和/或向分散体中加入碱 。 还提供了具有包括基底和硬涂膜的薄膜的基底。 硬涂膜包括链状无机氧化物细粒子群，其中平均形式为2至30的无机氧化物细颗粒以链的形式连接，并且基质。 无机氧化物颗粒可以是二氧化硅颗粒，二氧化硅 - 氧化铝颗粒是优选的，并且更优选具有内部空腔的多孔颗粒和/或中空颗粒。

    Method of producing silica-based particles
    10.
    发明授权
    Method of producing silica-based particles 有权

    公开(公告)号：US10040943B2

    公开(公告)日：2018-08-07

    申请号：US11631357

    申请日：2004-07-08

    申请人： Ryo Muraguchi ,  Mitsuaki Kumazawa ,  Toshiharu Hirai ,  Masafumi Hirai

    发明人： Ryo Muraguchi ,  Mitsuaki Kumazawa ,  Toshiharu Hirai ,  Masafumi Hirai

    IPC分类号： C01B33/14 ,  C09C1/30 ,  B82Y30/00 ,  C01B13/36 ,  C01B33/146 ,  C09D7/40 ,  C08K7/26 ,  C08K9/06

    摘要： Hollow silica-based particles having cavities inside the outer shell having a low refractive index. The method of producing the silica-based particles comprises the following steps (a) and (b): (a) a step in which, when an aqueous silicate solution and/or an acidic silicic acid solution and an aqueous solution of an alkali-soluble inorganic compound are simultaneously added in an alkali aqueous solution to prepare a dispersion liquid of composite oxide particles, an electrolytic salt is added at the molar ratio of a mole number of the electrolytic salt (ME) versus that of SiO2 (MS) [(ME)/(MS)] in the range from 0.1 to 10, and (b) a step of furthermore adding an electrolytic salt, if necessary, to the dispersion liquid of composite oxide particles and then removing at least a portion of elements constituting the composite oxide other than silicon by adding an acid to prepare a dispersion liquid of silica-based particles.