公开(公告)号：US20090289254A1

公开(公告)日：2009-11-26

申请号：US12534382

申请日：2009-08-03

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US5541747A

公开(公告)日：1996-07-30

申请号：US153901

申请日：1993-11-17

申请人： Takeshi Nishi ,  Toshimitsu Konuma ,  Akira Sugawara

发明人： Takeshi Nishi ,  Toshimitsu Konuma ,  Akira Sugawara

IPC分类号： G09G3/20 ,  G09G3/36 ,  G02F1/1343

CPC分类号： G09G3/3651 ,  G09G2320/0219 ,  G09G3/2011 ,  G09G3/2014 ,  G09G3/2018 ,  G09G3/207

摘要： A high-performance liquid crystal display includes a pair of substrates and a liquid crystal cell containing a ferroelectric or antiferroelectric liquid crystal. TFTs or a ferroelectric thin film is formed on one substrate. A given amount of electric charge is supplied into the liquid crystal inside the pixel electrodes. After the supply, the charge is retained under a high-resistivity condition. The ratio of the area of parts of the liquid crystal material in a first state to the area of parts in a second state is controlled by the amount of electric charge supplied, thus achieving a wide gray scale. The fast response and the wide viewing angle intrinsic in the liquid crystal are fully exploited. Further, a liquid crystal display using a liquid crystal material consisting either of a liquid crystal material showing ferroelectricity or anfiferroelectricity or of a high polymer in which such a liquid crystal material is dispersed is disclosed. The liquid crystal material is so selected that it shows appropriate spontaneous polarization. The time for which an electric field is applied to the liquid crystal material is controlled to obtain a gray scale.

摘要翻译： 高性能液晶显示器包括一对基板和含有铁电或反铁电液晶的液晶单元。 在一个基板上形成TFT或铁电薄膜。 给像素电极内的液晶供给一定量的电荷。 供电后，电荷保持在高电阻条件下。 第一状态下的液晶材料的部分面积与第二状态下的部分面积的比例由供给的电荷量控制，从而达到宽的灰度。 充分利用了液晶本身的快速响应和广视角。 此外，公开了使用由显示铁电性或铁电体的液晶材料构成的液晶材料的液晶显示器或其中分散有这种液晶材料的高分子量的液晶显示器。 选择液晶材料，使其显示适当的自发极化。 控制向液晶材料施加电场的时间以获得灰度级。

公开(公告)号：US20050142705A1

公开(公告)日：2005-06-30

申请号：US11064821

申请日：2005-02-25

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

公开(公告)号：US5736434A

公开(公告)日：1998-04-07

申请号：US473951

申请日：1995-06-07

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C25D11/04 ,  C25D11/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84 ,  H01L21/326 ,  H01L21/479

CPC分类号： H01L29/66765 ,  C25D11/02 ,  H01L21/28079 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76888

摘要： An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, and maintaining the voltage at the predetermined value thereafter.

摘要翻译： 含有低浓度杂质，从而提高膜质量的阳极氧化物及其制造方法。 该方法包括增加金属薄膜和阴极之间的电流，直到它们之间的电压达到预定值，然后将电压保持在预定值。

公开(公告)号：US5672900A

公开(公告)日：1997-09-30

申请号：US588677

申请日：1996-01-19

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Takahiro Tsuji

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Takahiro Tsuji

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/76 ,  H01L27/01 ,  H01L27/088 ,  H01L31/036

CPC分类号： H01L29/78621 ,  H01L29/66757 ,  Y10S257/90

摘要： A thin-film transistor (TFT) comprising an active region provided on a substrate and a gate electrode on the active region. A porous anodic oxide film is provided on the sides and top of the gate electrode where the lateral thickness of the anodic oxide provided on the side surface is larger than the vertical thickness of the anodic oxide provided on the top surface or where a first anodic oxide is provided on both the top and side surfaces and a second anodic oxide is provided on the side surfaces wherein the first anodic oxide is interposed between the second anodic oxide and the side surfaces of the gate electrode.

摘要翻译： 一种薄膜晶体管（TFT），包括设置在基板上的有源区和有源区上的栅电极。 设置在侧面的阳极氧化物的横向厚度大于设置在顶面上的阳极氧化物的垂直厚度的栅电极的侧面和顶部上的多孔阳极氧化膜，或第一阳极氧化物 设置在顶表面和侧表面上，并且在侧表面上设置第二阳极氧化物，其中第一阳极氧化物介于第二阳极氧化物和栅电极的侧表面之间。

公开(公告)号：US5639344A

公开(公告)日：1997-06-17

申请号：US436907

申请日：1995-05-08

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C23F1/20 ,  H01L21/311 ,  H01L21/336 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L29/66757 ,  H01L21/31111 ,  H01L29/42372 ,  Y10S438/97

摘要： An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide layer formed on the surface of a material containing aluminum as the principal component thereof.

摘要翻译： 至少包含磷酸，乙酸和硝酸的蚀刻材料，其中加入铬酸。 还要求保护的是使用上述蚀刻材料的蚀刻工艺，条件是该方法包括通过使用溶液选择性地蚀刻形成在包含铝的材料的表面上的氧化铝层作为其主要成分。

公开(公告)号：US5595638A

公开(公告)日：1997-01-21

申请号：US401698

申请日：1995-03-10

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C25D11/04 ,  C25D11/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786 ,  C25D5/00 ,  C25D5/18 ,  C25D5/48 ,  C25D11/00

CPC分类号： H01L29/66765 ,  C25D11/02 ,  H01L21/28079 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76888

摘要： An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, and maintaining the voltage at the predetermined value thereafter.

摘要翻译： 含有低浓度杂质，从而提高膜质量的阳极氧化物及其制造方法。 该方法包括增加金属薄膜和阴极之间的电流，直到它们之间的电压达到预定值，然后将电压保持在预定值。

公开(公告)号：US08198683B2

公开(公告)日：2012-06-12

申请号：US12958739

申请日：2010-12-02

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US07847355B2

公开(公告)日：2010-12-07

申请号：US12534382

申请日：2009-08-03

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US07525158B2

公开(公告)日：2009-04-28

申请号：US10893889

申请日：2004-07-20

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。