公开(公告)号：US09315891B2

公开(公告)日：2016-04-19

申请号：US13837261

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Joung Joo Lee ,  William Johanson ,  Keith A. Miller ,  Alan A. Ritchie

IPC: C23C14/50 ,  C23C16/458 ,  H01J37/34 ,  H01L21/3065 ,  H01L21/683 ,  C23C14/34 ,  H01L21/687 ,  H01J37/32

CPC classification number: C23C14/34 ,  C23C14/50 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/34 ,  H01L21/3065 ,  H01L21/68764

Abstract: In some embodiments, a method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit may include positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring; and performing a plasma etch process while the substrate support is in the second position.

Abstract translation: 在一些实施例中，用于处理具有基板支撑件的处理室中的基板的方法，所述基板支撑件被配置为在垂直于处理套件的盖环的顶表面的方向上移动，可以包括将基板支撑件定位在第一位置，使得 基板的顶表面位于围绕衬底支撑件的周边设置的处理套件的覆盖环的顶表面下方约至10mm的约3mm处; 在衬底支撑件处于第一位置时执行等离子体沉积工艺; 将衬底支撑件移动到第二位置，使得衬底的顶表面设置在覆盖环的顶表面上方约15mm至约15mm处; 以及在衬底支撑件处于第二位置时执行等离子体蚀刻工艺。

公开(公告)号：US08865012B2

公开(公告)日：2014-10-21

申请号：US13831424

申请日：2013-03-14

Applicant: Applied Materials, Inc.

Inventor： Zhenbin Ge ,  Alan A. Ritchie

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3065

CPC classification number: H01L21/68735 ,  C23C16/0245 ,  C23C16/509 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method for processing a substrate may include placing a substrate atop a substrate support disposed beneath a processing volume of a process chamber having a grounded shield surrounding the process volume and a conductive cover ring selectably supportable by the grounded shield; positioning the substrate support in a first position such that the substrate support is not in contact with the conductive cover ring and such that a conductive member electrically coupled to the cover ring contacts the grounded shield to electrically couple the cover ring to the grounded shield; and performing a plasma enhanced etch process on the substrate.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，用于处理衬底的方法可以包括将衬底放置在衬底支撑件的顶部，该衬底支撑件设置在具有围绕处理体积的接地屏蔽的处理室的处理容积下方，以及可选择地由接地屏蔽支撑的导电覆盖环; 将基板支撑件定位在第一位置，使得基板支撑件不与导电盖环接触，并且使得电耦合到盖环的导电构件接触接地屏蔽，以将盖环电耦合到接地屏蔽件; 以及在衬底上执行等离子体增强蚀刻工艺。

公开(公告)号：US11162170B2

公开(公告)日：2021-11-02

申请号：US14599831

申请日：2015-01-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan A. Ritchie ,  Zhenbin Ge ,  Jenn Yue Wang ,  Sally Lou

IPC: C23C14/58 ,  C23C14/34 ,  H01J37/34

Abstract: Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.

公开(公告)号：US09593417B2

公开(公告)日：2017-03-14

申请号：US14029462

申请日：2013-09-17

Applicant: Applied Materials, Inc.

Inventor： Wei Ti Lee ,  Ted Guo ,  Steve H. Chiao ,  Alan A. Ritchie

IPC: C23C16/455 ,  C23C14/16 ,  C23C16/44

CPC classification number: C23C16/45561 ,  C23C14/165 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45591 ,  Y10T29/497 ,  Y10T29/49826 ,  Y10T137/0491 ,  Y10T137/9029

Abstract: A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.

Abstract translation: 提供了一种用于处理室的气体管线系统和形成用于处理室的气体管线系统的方法。 气体管线系统包括连接电抛光线性气体管线的电抛光多通阀。 通过使用多通阀而不是三通阀，并对线性气体管线进行电解抛光，可以减少气体管线系统中污染颗粒的成核。

公开(公告)号：US09957601B2

公开(公告)日：2018-05-01

申请号：US13836996

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad Rasheed ,  Kirankumar Savandaiah ,  Alan A. Ritchie ,  Isaac Porras ,  Keith A. Miller

IPC: C23C16/04 ,  C23C14/00 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/0063 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/3405

Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a shield for use in a physical vapor deposition chamber, comprises an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, an annular groove formed in an inner wall of the one-piece body, and a plurality of gas distribution vents disposed along the annular feature and formed through the one-piece body, wherein the plurality of gas distribution vents are spaced apart from each other to distribute gases into the inner volume in a desired pattern.

公开(公告)号：US09593410B2

公开(公告)日：2017-03-14

申请号：US13785880

申请日：2013-03-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhenbin Ge ,  Alan A. Ritchie

IPC: C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/54 ,  C23C14/3471 ,  C23C14/35 ,  H01J37/32165 ,  H01J37/32403 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J37/3476

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.

Abstract translation: 本文提供了处理衬底的方法和装置。 在一些实施例中，物理气相沉积室包括具有第一基本频率并且耦合到目标或基板支架之一的第一RF电源; 以及具有第二基本频率并耦合到所述目标或所述衬底支架之一的第二RF电源，其中所述第一和第二基本频率是彼此的整数倍，其中所述第二基本频率被修改为偏移的第二基本频率 这不是第一个基本频率的整数倍。

公开(公告)号：US09404174B2

公开(公告)日：2016-08-02

申请号：US13799014

申请日：2013-03-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Donny Young ,  Alan A. Ritchie

IPC: H01J37/34 ,  C23C14/34

CPC classification number: C23C14/34 ,  C23C14/3407 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3435 ,  H01J37/3441

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract translation: 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：US09177763B2

公开(公告)日：2015-11-03

申请号：US13837064

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad Rasheed ,  Alan A. Ritchie ,  Isaac Porras ,  Keith A. Miller

IPC: H01J37/244 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32816 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3441

Abstract: A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

Abstract translation: 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中，用于测量基板处理室的压力的装置可以包括具有环形一体式主体的屏蔽件，该主体具有内部容积，顶部开口和底部开口，其中环形单件主体的底部包括 内部向上延伸的U形部分，围绕屏蔽的外壁布置的气体注入适配器，形成在气体注入适配器内的压力测量导管，其中压力测量导管经由形成在外部 所述屏蔽壁和衬底处理室部件设置在所述屏蔽件附近，并且其中所述间隙具有与所述内部容积基本上相同的压力，以及联接到所述压力测量导管的压力检测器。