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公开(公告)号：US12288350B2
公开(公告)日：2025-04-29
申请号：US17852013
申请日：2022-06-28
Applicant: Applied Materials, Inc.
Inventor： Mehdi Vaez-Iravani , Guoheng Zhao
Abstract: Methods for detecting areas of localized tilt on a sample using imaging reflectometry measurements include obtaining a first image without blocking any light reflected from the sample and obtaining a second image while blocking some light reflected from the sample at the aperture plane. The areas of localized tilt are detected by comparing first reflectance intensity values of pixels in the first image with second reflectance intensity values of corresponding pixels in the second image.
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公开(公告)号：US20240035967A1
公开(公告)日：2024-02-01
申请号：US18361586
申请日：2023-07-28
Applicant: Applied Materials, Inc.
Inventor： Joseph R. Johnson , Ang Li , Jean Marc Fan Chung Tsang Min Ching , Mehdi Vaez-Iravani
IPC: G01N21/47
CPC classification number: G01N21/4795
Abstract: An imaging system for capturing spatial-omic images of biological tissue samples may include an imaging chamber configured to secure a biological tissue sample placed in the imaging system; a Time Delay and Integration (TDI) imager comprising at least one scan line; a light source configured to illuminate an area on the biological tissue sample that is being captured by the TDI imager; and a controller configured to cause the TDI imager to scan the biological tissue sample using one or more TDI scans of the biological tissue sample.
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3.发明公开公开(公告)号：US20230169643A1
公开(公告)日：2023-06-01
申请号：US18070114
申请日：2022-11-28
Applicant: Applied Materials, Inc.
Inventor： Mehdi Vaez-Iravani , Todd J. Egan
CPC classification number: G06T7/001 , G01B21/08 , B25J9/1697 , G06T7/60 , G06T2207/10152 , G06T2207/30148
Abstract: Implementations disclosed describe a method of obtaining a first image of a sample using a first light, wherein the sample has been subjected to a processing operation associated with a change of a thickness of the sample. The method further includes weighing the sample to obtain a first mass of the sample. The method further includes determining, based at least in part on the first image of the sample and the first mass of the sample, one or more properties of the sample, such as the change of a thickness of the sample, a change of an refractive index of the sample, and/or a change of an optical density of the sample a distribution of the change of the thickness of the sample.
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公开(公告)号：US20210302330A1
公开(公告)日：2021-09-30
申请号：US16831575
申请日：2020-03-26
Applicant: Applied Materials, Inc.
Inventor： Guoheng Zhao , Mehdi Vaez-Iravani
IPC: G01N21/956 , G01N21/95
Abstract: Methods for performing imaging reflectometry measurements include illuminating a measurement area on a sample using an input beam having a first peak wavelength, and obtaining multiple images of the measurement area using portions of the input beam reflected from the sample. A reflectance intensity value is determined for each of a plurality of pixels in each of the images. A parameter associated with the particular structure is determined using the reflectance intensity value.
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公开(公告)号：US11119051B2
公开(公告)日：2021-09-14
申请号：US17062231
申请日：2020-10-02
Applicant: Applied Materials, Inc.
Inventor： Todd Egan , Mehdi Vaez-Iravani , Samer Banna , Kyle Tantiwong , Gregory Kirk , Abraham Ravid , Yaoming Shen
Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.
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Patent Agency Ranking
公开(公告)号：US10816464B2
公开(公告)日：2020-10-27
申请号：US16295173
申请日：2019-03-07
Applicant: APPLIED MATERIALS, INC.
Inventor： Guoheng Zhao , Mehdi Vaez-Iravani , Todd J. Egan
IPC: G01N21/55
Abstract: An imaging reflectometer includes a source module configured to generate a plurality of input beams at different nominal wavelengths. An illumination pupil having a first numerical aperture (NA) is arranged so that each of the plurality of input beams passes through the illumination pupil. A large field lens is configured to receive at least a portion of each of the plurality of input beams and provide substantially telecentric illumination over a sample being imaged. The large field lens is also configured to receive reflected portions of the substantially telecentric illumination reflected from the sample. The reflected portions pass through an imaging pupil having a second NA that is lower than the first NA and are received by an imaging sensor module that generates image information.
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公开(公告)号：US20250164238A1
公开(公告)日：2025-05-22
申请号：US18511021
申请日：2023-11-16
Applicant: APPLIED MATERIALS, INC.
Inventor： Eric Chin Hong Ng , Todd Jonathan Egan , Mayu Felicia Yamamura , Phillip William Peters , Christopher Beaudry , Mehdi Vaez-Iravani
Abstract: A system includes a radiation source configured to emit a radiation beam, a first optical sensor configured to detect a first intensity of a first portion of the radiation beam reflected from a surface of an object, a second optical sensor configured to detect a second intensity of a second portion of the radiation beam scattered by the surface of the object, and a third optical sensor configured to detect a third intensity of a third portion of the radiation beam scattered by the surface of the object. The system further includes a processing device communicatively coupled to the first optical sensor, the second optical sensor, and the third optical sensor. The processing device is configured to determine a roughness or an emissivity of the surface of the object based on a comparison of two or more of the first intensity, the second intensity, or the third intensity.
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公开(公告)号：US12211717B2
公开(公告)日：2025-01-28
申请号：US17216203
申请日：2021-03-29
Applicant: Applied Materials, Inc.
Inventor： Eric Chin Hong Ng , Edward Wibowo Budiarto , Mehdi Vaez-Iravani , Todd Jonathan Egan , Venkatakaushik Voleti
Abstract: A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.
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公开(公告)号：US20250012560A1
公开(公告)日：2025-01-09
申请号：US18586090
申请日：2024-02-23
Applicant: Applied Materials, Inc.
Inventor： Venkatakaushik Voleti , Mehdi Vaez-Iravani
Abstract: Disclosed systems and techniques are directed to interferometry-based sample thickness metrology in manufacturing systems. For example, the disclosed techniques include directing a focused beam to a plurality of locations of a sample and detecting an interference pattern (IP) associated with a light departing from the respective location and generated upon interaction of the focused beam with the sample. The techniques further include determining, based on a first IP associated with a first light departing from a first location and a second IP associated with a second light departing from a second location, a magnitude and a sign of a difference between a first thickness of the sample at the first location and a second thickness of the sample at the second location.
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公开(公告)号：US20240304430A1
公开(公告)日：2024-09-12
申请号：US18666251
申请日：2024-05-16
Applicant: Applied Materials, Inc.
Inventor： Mehdi Vaez-Iravani , Todd J. Egan , Kyle Ross Tantiwong
CPC classification number: H01J37/32972 , C23C14/34 , C23C14/54 , C23C16/4401 , C23C16/52 , G01N21/01 , H01J37/32477 , H01J37/3476 , H01J2237/3321
Abstract: Implementations disclosed describe a system that includes a deposition chamber, a light source to produce an incident beam of light, wherein the incident beam of light is to illuminate a region of the deposition chamber, and a camera to collect a scattered light originating from the illuminated region of the deposition chamber, wherein the scattered light is to be produced upon interaction of the first incident beam of light with particles inside the illuminated region of the deposition chamber. The described system may optionally have a processing device, coupled to the camera, to generate scattering data for a plurality of locations of the illuminated region, wherein the scattering data for each location comprises intensity of the scattered light originating from this location.
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