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    PROCESS FOR PRODUCING AIR GAPS IN MICROSTRUCTURES
    1.
    发明申请
    PROCESS FOR PRODUCING AIR GAPS IN MICROSTRUCTURES 有权
    在微结构中生产气囊的方法

    公开(公告)号：US20090178999A1

    公开(公告)日：2009-07-16

    申请号：US12353872

    申请日：2009-01-14

    Applicant: Vincent Jousseaume ,  Aziz Zenasni

    Inventor： Vincent Jousseaume ,  Aziz Zenasni

    IPC: B44C1/22

    CPC classification number: B81C1/00476 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/07 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/24273 ,  H01L2924/00

    Abstract: The invention relates to a process for producing at least one air gap in a microstructure, which comprises:a) the supply of a microstructure comprising at least one gap filled with a sacrificial material, this gap being limited over at least part of its surface by an impermeable membrane but which may be rendered permeable by the action of a chemical etchant, this etchant also being capable of degrading the sacrificial material;b) the contacting of the microstructure with said chemical etchant in order to make the membrane permeable and degrade the sacrificial material; andc) the removal of the chemical etchant from the microstructure; and in which the chemical etchant is a fluid containing hydrofluoric acid and/or ammonium fluoride.Applications: Microelectronics and micro-technology.

    Abstract translation: 本发明涉及用于在微结构中产生至少一个气隙的方法，其包括：a）提供包含填充有牺牲材料的至少一个间隙的微结构，该间隙在其表面的至少一部分上受到限制 不渗透的膜，但是可以通过化学蚀刻剂的作用而变得可渗透，该蚀刻剂也能够降解牺牲材料; b）显微组织与所述化学蚀刻剂的接触以使膜能够渗透并降解牺牲材料; 和c）从微结构中除去化学蚀刻剂; 并且其中化学蚀刻剂是含有氢氟酸和/或氟化铵的流体。 应用范围：微电子和微电子技术。

    Process for producing air gaps in microstructures
    2.
    发明授权
    Process for producing air gaps in microstructures 有权
    在微结构中产生气隙的方法

    公开(公告)号：US08231797B2

    公开(公告)日：2012-07-31

    申请号：US12353872

    申请日：2009-01-14

    Applicant: Vincent Jousseaume ,  Aziz Zenasni

    Inventor： Vincent Jousseaume ,  Aziz Zenasni

    IPC: B31D3/00 ,  B32B3/10 ,  H01L21/44 ,  C03C15/00

    CPC classification number: B81C1/00476 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/07 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/24273 ,  H01L2924/00

    Abstract: A process for producing at least one air gap in a microstructure, which includes the supply of a microstructure comprising at least one gap filled with a sacrificial material, this gap being limited over at least part of its surface by an impermeable membrane but which may be rendered permeable by the action of a chemical etchant, this etchant also being capable of degrading the sacrificial material and the contacting of the microstructure with said chemical etchant in order to make the membrane permeable and degrade the sacrificial material, and the removal of the chemical etchant from the microstructure and in which the chemical etchant is a fluid containing hydrofluoric acid and/or ammonium fluoride. Applications include microelectronics and micro-technology.

    Abstract translation: 一种用于在微结构中产生至少一个空气间隙的方法，其包括提供包含填充有牺牲材料的至少一个间隙的微结构，该间隙在其表面的至少一部分上被不透水膜限制，但可以是 通过化学蚀刻剂的作用使其渗透，该蚀刻剂还能够降解牺牲材料和微结构与所述化学蚀刻剂的接触，以便使膜可渗透和降解牺牲材料，并除去化学蚀刻剂 来自微结构，其中化学蚀刻剂是含有氢氟酸和/或氟化铵的流体。 应用包括微电子和微电子技术。

    Process for fabricating amorphous hydrogenated silicon carbide films provided with through-pores and films thus obtained
    3.
    发明授权
    Process for fabricating amorphous hydrogenated silicon carbide films provided with through-pores and films thus obtained 有权
    制造具有通孔的非晶氢化碳化硅膜制造方法

    公开(公告)号：US07850863B2

    公开(公告)日：2010-12-14

    申请号：US12353847

    申请日：2009-01-14

    Applicant: Aziz Zenasni

    Inventor： Aziz Zenasni

    IPC: B31D3/00

    CPC classification number: H01L21/3148 ,  B82Y10/00 ,  H01L21/316 ,  H01L21/7682 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L2221/1047 ,  Y10T428/24273

    Abstract: A process for fabricating a hydrogenated amorphous silicon carbide film having through-pores includes the formation on a substrate of a film consisting of an amorphous hydrogenated silicon carbide matrix in which silicon oxide nanowires are dispersed therethrough, and then the selective destruction by a chemical agent of the silicon oxide nanowires present in the film formed at step a). Applications include microelectronics and micro-technology, in all fabrication processes that involve the degradation of a sacrificial material by diffusion of a chemical agent through a film permeable to this agent for the production of air gaps, in particular the fabrication of air-gap interconnects for integrated circuits.

    Abstract translation: 用于制造具有通孔的氢化非晶碳化硅膜的工艺包括：在基底上形成由非晶氢化碳化硅基体构成的膜，其中氧化硅纳米线分散在其中，然后通过化学试剂的选择性破坏 存在于步骤a）中形成的膜中的氧化硅纳米线。 应用包括微电子学和微观技术，在涉及通过化学试剂通过可渗透该试剂的薄膜扩散以产生气隙的牺牲材料降解的所有制造工艺中，特别是制造气隙互连 集成电路。

    Method for preparing an oriented-porosity dielectric material on a substrate by means of electromagnetic and/or photonic treatment
    7.
    发明授权
    Method for preparing an oriented-porosity dielectric material on a substrate by means of electromagnetic and/or photonic treatment 有权
    通过电磁和/或光子处理在衬底上制备取向孔隙介电材料的方法

    公开(公告)号：US08133548B2

    公开(公告)日：2012-03-13

    申请号：US12035885

    申请日：2008-02-22

    Applicant: Aziz Zenasni

    Inventor： Aziz Zenasni

    IPC: C08F2/52

    CPC classification number: H01L21/31695 ,  B05D1/60 ,  B05D3/065 ,  B05D3/14 ,  C23C16/401 ,  C23C16/482 ,  C23C16/50 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/3122

    Abstract: Provided a method for producing an oriented-porosity dielectric material on a substrate. The method includes depositing a vapor phase on a substrate of a composite layer comprising a material forming a matrix and a compound comprising chemical groups capable of being oriented under the effect of an electromagnetic field and/or photonic radiation; treating the composite layer to obtain the cross-linking of the material forming a matrix; and subjecting the substrate coated with the composite layer to an electromagnetic field and/or a photonic radiation.

    Abstract translation: 提供了一种在衬底上制备取向孔隙介电材料的方法。 该方法包括在包含形成基质的材料和包含能够在电磁场和/或光子辐射的作用下定向的化学基团的化合物的复合层的基底上沉积气相; 处理复合层以获得形成基质的材料的交联; 以及对涂覆有复合层的基板进行电磁场和/或光子辐射。

    Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits
    9.
    发明授权
    Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits 有权
    在微结构中产生气隙的方法，特别是用于集成电路的气隙互连结构类型

    公开(公告)号：US08026165B2

    公开(公告)日：2011-09-27

    申请号：US12434018

    申请日：2009-05-01

    Applicant: Aziz Zenasni

    Inventor： Aziz Zenasni

    IPC: H01L21/4763

    CPC classification number: B81C1/00047 ,  B81C2201/0108 ,  B81C2201/0128 ,  H01L21/7682

    Abstract: A process for producing at least one air gap in a microstructure, including supplying a microstructure having at least one gap filled with a sacrificial material that decomposes starting from a temperature θ1, this gap being delimited over at least one part of its surface by a non-porous membrane, composed of a material that forms a matrix and of a pore-forming agent that decomposes at a temperature θ2

    Abstract translation: 一种用于在微结构中产生至少一个气隙的方法，包括提供具有填充有从温度开始分解的牺牲材料的至少一个间隙的微结构; 1，该间隙通过其表面的至少一部分被界定 由形成基质的材料和在温度下分解的成孔剂组成的无孔膜; 2＆lt;＆lt; 1; 1至少20℃，并分散在该基质中，然后处理 为了选择性地分解成孔剂，然后在温度≧≥1的条件下处理微结构，以便分解牺牲材料，温度≧＆amp;

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