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    Configurable plasma volume etch chamber
    1.
    发明授权
    Configurable plasma volume etch chamber 有权
    可配置等离子体体积蚀刻室

    公开(公告)号：US06527911B1

    公开(公告)日：2003-03-04

    申请号：US09895537

    申请日：2001-06-29

    申请人： Bi-Ming Yen ,  Tuqiang Ni ,  Lumin Li ,  David Hemker

    发明人： Bi-Ming Yen ,  Tuqiang Ni ,  Lumin Li ,  David Hemker

    IPC分类号： H05H100

    CPC分类号： H01J37/32623 ,  H01J37/32568

    摘要： A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.

    摘要翻译： 提供等离子体处理室。 等离子体处理室包括配置成支撑基板的底部电极和位于底部电极上方的顶部电极。 等离子体处理室还包括设计成在闭合取向和开放取向之间转变的等离子体限制组件。 在封闭取向中，等离子体限制组件在处理期间限定等离子体的第一容积，并且在开放取向中，等离子体限制组件在处理期间限定大于第一容积的等离子体的第二容积。

    Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same
    2.
    发明授权
    Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same 有权
    真空等离子体处理器具有具有电极的室和用于等离子体激发的线圈及其操作方法

    公开(公告)号：US07105102B2

    公开(公告)日：2006-09-12

    申请号：US10769878

    申请日：2004-02-03

    申请人： Tuqiang Ni ,  Wenli Collison ,  David Hemker ,  Lumin Li

    发明人： Tuqiang Ni ,  Wenli Collison ,  David Hemker ,  Lumin Li

    IPC分类号： H01L21/00

    CPC分类号： H01J37/321 ,  C23F4/00 ,  G03F7/427

    摘要： A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.

    摘要翻译： 真空等离子体处理器包括屋顶结构，该屋顶结构包括介电窗口，所述介电窗口承载（1）具有高导电性的半导体板，因此其用作电极，（2）空心线圈和（3）至少一个电屏蔽。 屏蔽线圈和半导体板被定位成防止实质的线圈产生的电场分量入射在半导体板上。 在第一间隔期间，线圈产生RF电磁场，其产生从半导体晶片剥离光致抗蚀剂的等离子体。 在第二间隔期间，半导体板和另一个电极产生RF电磁场，其产生等离子体，其从晶片蚀刻电层，底层和光致抗蚀剂层。

    VACUUM PLASMA PROCESSOR HAVING A CHAMBER WITH ELECTRODES AND A COIL FOR PLASMA EXCITATION AND METHOD OF OPERATING SAME
    4.
    发明申请
    VACUUM PLASMA PROCESSOR HAVING A CHAMBER WITH ELECTRODES AND A COIL FOR PLASMA EXCITATION AND METHOD OF OPERATING SAME 有权
    具有电极和用于等离子体激发的线圈的室的真空等离子体处理器及其操作方法

    公开(公告)号：US20070044915A1

    公开(公告)日：2007-03-01

    申请号：US11467449

    申请日：2006-08-25

    申请人： Tuqiang Ni ,  Wenli Collison ,  David Hemker ,  Lumin Li

    发明人： Tuqiang Ni ,  Wenli Collison ,  David Hemker ,  Lumin Li

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： H01J37/321 ,  C23F4/00 ,  G03F7/427

    摘要： A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.

    摘要翻译： 真空等离子体处理器包括屋顶结构，该屋顶结构包括介电窗口，所述介电窗口承载（1）具有高导电性的半导体板，因此其用作电极，（2）空心线圈和（3）至少一个电屏蔽。 屏蔽线圈和半导体板被定位成防止实质的线圈产生的电场分量入射在半导体板上。 在第一间隔期间，线圈产生RF电磁场，其产生从半导体晶片剥离光致抗蚀剂的等离子体。 在第二间隔期间，半导体板和另一个电极产生RF电磁场，其产生等离子体，其从晶片蚀刻电层，底层和光致抗蚀剂层。

    Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same
    5.
    发明授权
    Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same 有权
    真空等离子体处理器具有具有电极的室和用于等离子体激发的线圈及其操作方法

    公开(公告)号：US08114246B2

    公开(公告)日：2012-02-14

    申请号：US11467449

    申请日：2006-08-25

    申请人： Tuqiang Ni ,  Wenli Collison ,  David Hemker ,  Lumin Li

    发明人： Tuqiang Ni ,  Wenli Collison ,  David Hemker ,  Lumin Li

    IPC分类号： H01L21/306 ,  C23C16/00

    CPC分类号： H01J37/321 ,  C23F4/00 ,  G03F7/427

    摘要： A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.

    摘要翻译： 真空等离子体处理器包括屋顶结构，该屋顶结构包括介电窗口，所述介电窗口承载（1）具有高导电性的半导体板，因此其用作电极，（2）空心线圈和（3）至少一个电屏蔽。 屏蔽线圈和半导体板被定位成防止实质的线圈产生的电场分量入射在半导体板上。 在第一间隔期间，线圈产生RF电磁场，其产生从半导体晶片剥离光致抗蚀剂的等离子体。 在第二间隔期间，半导体板和另一个电极产生RF电磁场，其产生等离子体，其从晶片蚀刻电层，底层和光致抗蚀剂层。

    Materials and gas chemistries for processing systems
    6.
    发明申请
    Materials and gas chemistries for processing systems 审中-公开
    材料和气体化学处理系统

    公开(公告)号：US20060011583A1

    公开(公告)日：2006-01-19

    申请号：US11230689

    申请日：2005-09-19

    申请人： Andrew Bailey ,  Alan Schoepp ,  David Hemker ,  Mark Wilcoxson

    发明人： Andrew Bailey ,  Alan Schoepp ,  David Hemker ,  Mark Wilcoxson

    IPC分类号： G01L21/30 ,  B44C1/22 ,  G01R31/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： H01J37/32467 ,  B05D1/62 ,  H01J37/32495

    摘要： A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

    摘要翻译： 公开了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括单室，基本方位对称的等离子体处理室，其中等离子体都被点燃并持续进行处理。 等离子体处理室没有单独的等离子体产生室。 等离子体处理室具有上端和下端。 等离子体处理室包括与输送到等离子体处理室中的反应性气体化学物质基本上不反应的材料。 此外，公开了流入等离子体处理室的反应气体。

    Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection
    8.
    发明申请
    Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection 有权
    用于过程状态监测和端点检测的斜率到阈值转换的方法和装置

    公开(公告)号：US20050125202A1

    公开(公告)日：2005-06-09

    申请号：US11030374

    申请日：2005-01-05

    申请人： Yehiel Gotkis ,  Vladimir Katz ,  David Hemker ,  Rodney Kistler ,  Nicolas Bright

    发明人： Yehiel Gotkis ,  Vladimir Katz ,  David Hemker ,  Rodney Kistler ,  Nicolas Bright

    IPC分类号： G05B23/02 ,  H01L21/66 ,  H03F1/26 ,  G06F15/00 ,  H04B15/00

    CPC分类号： G05B23/0254 ,  H01L22/26

    摘要： A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.

    摘要翻译： 提供了一种将基于斜率的检测任务转换为基于阈值的检测任务的方法。 该方法通过为对应于被监视的进程的值的一组点定义近似方程来启动。 然后，预测在被监视的处理的当前点的期望值。 接下来，计算被监视处理当前点的测量值与对应的期望值之间的差值。 然后，对连续点监测差异，以检测测量值和预期值之间的偏差值。 接下来，基于偏差值的检测来识别被监视处理的转变点。 还提供了一种处理系统，其被配置为提供用于基于斜率的转换的实时数据和计算机可读介质。