公开(公告)号：US08916061B2

公开(公告)日：2014-12-23

申请号：US13799680

申请日：2013-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Brian Reiss ,  Michael Willhoff ,  Daniel Mateja

IPC: H01L21/3063 ,  H01L21/306 ,  C09K3/14 ,  H01L21/3105 ,  C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.

Abstract translation: 本发明涉及一种化学机械抛光组合物，其包含二氧化铈磨料，一种或多种镧系元素金属的阳离子，一种或多种非离子聚合物，水和任选的一种或多种添加剂。 本发明还涉及用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底包括氧化硅，氮化硅和多晶硅中的一种或多种。

公开(公告)号：US20150024595A1

公开(公告)日：2015-01-22

申请号：US13947449

申请日：2013-07-22

Applicant: Cabot Microelectronics Corporation

Inventor： Dimitry Dinega ,  Kevin Moeggenborg ,  William Ward ,  Daniel Mateja

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

Abstract translation: 本发明提供了一种用于抛光包含二氧化硅，氮化硅和多晶硅的衬底的化学机械抛光方法。 该方法包括用CMP组合物研磨衬底的表面以从其中去除至少一些二氧化硅，氮化硅和多晶硅。 该CMP组合物包含悬浮在pH约为3至9.5并含有阳离子聚合物的水性载体中的颗粒状二氧化铈磨料; 其中阳离子聚合物由季甲基丙烯酰氧基烷基铵聚合物组成。

公开(公告)号：US09850402B2

公开(公告)日：2017-12-26

申请号：US14100339

申请日：2013-12-09

Applicant: Cabot Microelectronics Corporation

Inventor： Dmitry Dinega ,  Sairam Shekhar ,  Renhe Jia ,  Daniel Mateja

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.

公开(公告)号：US09303187B2

公开(公告)日：2016-04-05

申请号：US13947449

申请日：2013-07-22

Applicant: Cabot Microelectronics Corporation

Inventor： Dimitry Dinega ,  Kevin Moeggenborg ,  William Ward ,  Daniel Mateja

IPC: H01L21/304 ,  C09G1/02 ,  H01L21/306 ,  C09G1/00 ,  C09G1/04 ,  C09K13/06 ,  C09K3/14 ,  B24B1/00 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

Abstract translation: 本发明提供了一种用于抛光包含二氧化硅，氮化硅和多晶硅的衬底的化学机械抛光方法。 该方法包括用CMP组合物研磨衬底的表面以从其中去除至少一些二氧化硅，氮化硅和多晶硅。 该CMP组合物包含悬浮在pH约为3至9.5并含有阳离子聚合物的水性载体中的颗粒状二氧化铈磨料; 其中阳离子聚合物由季甲基丙烯酰氧基烷基铵聚合物组成。

公开(公告)号：US20150159046A1

公开(公告)日：2015-06-11

申请号：US14100339

申请日：2013-12-09

Applicant: Cabot Microelectronics Corporation

Inventor： Dmitry DINEGA ,  Sairam SHEKHAR ,  Renhe JIA ,  Daniel Mateja

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.

Abstract translation: 本发明提供化学机械抛光组合物和用于抛光包含二氧化硅和氮化硅的衬底的方法，其提供相对于图案化晶片上的氧化硅（例如，PETEOS）的SiN选择性去除。 在一个实施例中，CMP方法包括用CMP组合物研磨包括SiN和氧化硅的衬底的表面以从其中去除至少一些SiN。 CMP组合物包含悬浮在水性载体中的颗粒磨料（例如二氧化铈）或由其组成，并且含有带季铵化氮杂芳族部分的阳离子聚合物，其中该组合物具有大于约3的pH。