公开(公告)号：US11597854B2

公开(公告)日：2023-03-07

申请号：US16513404

申请日：2019-07-16

Applicant: Cabot Microelectronics Corporation

Inventor： William J. Ward ,  Matthew E. Carnes ,  Ji Cui ,  Helin Huang

IPC: C09G1/02 ,  C08K3/22 ,  C09K13/00 ,  C23F1/26 ,  H01L21/306 ,  C23F3/06 ,  C08L39/00 ,  C08K9/00 ,  C08K3/36 ,  C08K3/28 ,  H01L21/321

Abstract: The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

公开(公告)号：US10522341B2

公开(公告)日：2019-12-31

申请号：US15825305

申请日：2017-11-29

Applicant: Cabot Microelectronics Corporation

Inventor： Helin Huang ,  Ji Cui

IPC: C09G1/06 ,  H01L21/02 ,  H01L21/321 ,  C11D3/22 ,  C11D3/20 ,  C11D17/00 ,  C11D3/48 ,  C11D3/00 ,  C11D11/00 ,  C11D3/43

Abstract: Described is a post-CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.

公开(公告)号：US10920107B2

公开(公告)日：2021-02-16

申请号：US16797438

申请日：2020-02-21

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. Hains ,  Juyeon Chang ,  Tina C. Li ,  Viet Lam ,  Ji Cui ,  Sarah Brosnan ,  Chul Woo Nam

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/762

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.

公开(公告)号：US11043151B2

公开(公告)日：2021-06-22

申请号：US15723886

申请日：2017-10-03

Applicant: Cabot Microelectronics Corporation

Inventor： Ji Cui ,  Helin Huang ,  Kevin P. Dockery ,  Pankaj K. Singh ,  Hung-Tsung Huang ,  Chih-Hsien Chien

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105 ,  G09G1/02

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

公开(公告)号：US20190211228A1

公开(公告)日：2019-07-11

申请号：US15866008

申请日：2018-01-09

Applicant: Cabot Microelectronics Corporation

Inventor： William J. Ward ,  Matthew E. Carnes ,  Ji Cui ,  Kim Long

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  H01L21/3212

Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising providing a substrate comprising a tungsten layer on a surface of the substrate and a silicon oxide layer on a surface of the substrate, providing a chemical-mechanical polishing composition comprising a tungsten layer and a silicon oxide layer using a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −20 mV to about −70 mV at a pH of about 2, b) an iron compound, c) a stabilizing agent, and d) an aqueous carrier, and contacting the substrate with a polishing pad and the chemical mechanical polishing composition to polish the substrate.

公开(公告)号：US10029345B2

公开(公告)日：2018-07-24

申请号：US15207973

申请日：2016-07-12

Applicant: Cabot Microelectronics Corporation

Inventor： Viet Lam ,  Ji Cui

IPC: H01L21/302 ,  H01L21/461 ,  B24B37/04 ,  C09G1/02

Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.