中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.017 seconds)

    POLISHING COMPOSITION CONTAINING CERIA ABRASIVE
    1.
    发明申请
    POLISHING COMPOSITION CONTAINING CERIA ABRASIVE 有权
    包含CERIA磨砂的抛光组合物

    公开(公告)号：US20160257856A1

    公开(公告)日：2016-09-08

    申请号：US14639564

    申请日：2015-03-05

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Alexander HAINS ,  Steven KRAFT ,  Renhe JIA

    IPC: C09G1/04 ,  B24B37/04

    CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

    Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。

    CMP COMPOSITIONS EXHIBITING REDUCED DISHING IN STI WAFER POLISHING
    2.
    发明申请
    CMP COMPOSITIONS EXHIBITING REDUCED DISHING IN STI WAFER POLISHING 有权
    CMP组合物在STI波浪抛光中展示减少的破碎

    公开(公告)号：US20160168421A1

    公开(公告)日：2016-06-16

    申请号：US14568311

    申请日：2014-12-12

    Applicant: Cabot Microelectronics Corporation

    Inventor： Sudeep PALLIKKARA KUTTIATOOR ,  Kevin DOCKERY ,  Prativa PANDEY ,  Renhe JIA

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C03C15/00 ,  C23F1/16 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/76224

    Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

    Abstract translation: 本发明提供了含有二氧化铈磨料，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R1，R2，R3和R4以及n如本文所定义，多羟基芳族化合物 ，聚乙烯醇和水，其中所述抛光组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。

    CMP COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF SILICON NITRIDE
    3.
    发明申请
    CMP COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF SILICON NITRIDE 有权
    CMP组合物和选择性去除硅酸盐的方法

    公开(公告)号：US20150159046A1

    公开(公告)日：2015-06-11

    申请号：US14100339

    申请日：2013-12-09

    Applicant: Cabot Microelectronics Corporation

    Inventor： Dmitry DINEGA ,  Sairam SHEKHAR ,  Renhe JIA ,  Daniel Mateja

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

    Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.

    Abstract translation: 本发明提供化学机械抛光组合物和用于抛光包含二氧化硅和氮化硅的衬底的方法，其提供相对于图案化晶片上的氧化硅（例如，PETEOS）的SiN选择性去除。 在一个实施例中，CMP方法包括用CMP组合物研磨包括SiN和氧化硅的衬底的表面以从其中去除至少一些SiN。 CMP组合物包含悬浮在水性载体中的颗粒磨料（例如二氧化铈）或由其组成，并且含有带季铵化氮杂芳族部分的阳离子聚合物，其中该组合物具有大于约3的pH。

    POLISHING COMPOSITION CONTAINING CERIA ABRASIVE
    5.
    发明申请
    POLISHING COMPOSITION CONTAINING CERIA ABRASIVE 有权
    包含CERIA磨砂的抛光组合物

    公开(公告)号：US20170044403A1

    公开(公告)日：2017-02-16

    申请号：US15338724

    申请日：2016-10-31

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Alexander HAINS ,  Steven KRAFT ,  Renhe JIA

    IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  C09K3/14 ,  B24B37/20

    CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

    Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。

    POLISHING COMPOSITION CONTAINING CATIONIC POLYMER ADDITIVE
    7.
    发明申请
    POLISHING COMPOSITION CONTAINING CATIONIC POLYMER ADDITIVE 有权
    包含阳离子聚合物添加剂的抛光组合物

    公开(公告)号：US20160257853A1

    公开(公告)日：2016-09-08

    申请号：US14639598

    申请日：2015-03-05

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Renhe JIA

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C09G1/00 ,  C23F1/14 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212

    Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.

    Abstract translation: 本发明提供了化学机械抛光组合物和用化学机械抛光组合物化学机械抛光衬底，特别是包含氧化硅层的衬底的方法。 抛光组合物包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，中值粒度为约75nm至约200nm，并且以约0.005wt。的浓度存在于抛光组合物中。 ％至约2wt。 官能化杂环，选自季胺的阳离子聚合物是阳离子聚乙烯醇，阳离子纤维素，任选的羧酸，pH调节剂和水性载体，并且具有约1至约6的pH 。

    MIXED ABRASIVE POLISHING COMPOSITIONS
    8.
    发明申请
    MIXED ABRASIVE POLISHING COMPOSITIONS 有权
    混合磨砂抛光组合物

    公开(公告)号：US20150102012A1

    公开(公告)日：2015-04-16

    申请号：US14051121

    申请日：2013-10-10

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Jakub NALASKOWSKI ,  Viet LAM ,  Renhe JIA ,  Jeffrey DYSARD

    IPC: C09G1/02 ,  H01L21/306 ,  H01L21/02

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02013 ,  H01L21/30625 ,  H01L21/31053

    Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.

    Abstract translation: 本发明提供化学 - 机械抛光组合物和用化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 抛光组合物包括第一磨料颗粒，其中第一磨料颗粒是二氧化铈颗粒，第二磨料颗粒，其中第二磨料颗粒是二氧化铈颗粒，表面改性二氧化硅颗粒或有机颗粒，pH调节剂和含水载体 。 抛光组合物还显示多峰粒度分布。

Patent Agency Ranking