Method for determining the temperature of semiconductor substrates from
bandgap spectra
    3.
    发明授权
    Method for determining the temperature of semiconductor substrates from bandgap spectra 失效
    从带隙光谱确定半导体衬底的温度的方法

    公开(公告)号:US6116779A

    公开(公告)日:2000-09-12

    申请号:US814599

    申请日:1997-03-10

    IPC分类号: G01K11/14 G01K11/00

    CPC分类号: G01K11/14

    摘要: An optical method for measuring the temperature of a substrate material with a temperature dependent band edge. In this method both the position and the width of the knee of the band edge spectrum of the substrate are used to determine temperature. The width of the knee is used to correct for the spurious shifts in the position of the knee caused by: (i) thin film interference in a deposited layer on the substrate; (ii) anisotropic scattering at the back of the substrate; (iii) the spectral variation in the absorptance of deposited layers that absorb in the vicinity of the band edge of the substrate; and (iv) the spectral dependence in the optical response of the wavelength selective detection system used to obtain the band edge spectrum of the substrate. The adjusted position of the knee is used to calculate the substrate temperature from a predetermined calibration curve. This algorithm is suitable for real-time applications as the information needed to correct the knee position is obtained from the spectrum itself. Using a model for the temperature dependent shape of the absorption edge in GaAs and InP, the effect of substrate thickness and the optical geometry of the method used to determine the band edge spectrum, are incorporated into the calibration curve.

    摘要翻译: 一种用于测量具有温度依赖带边缘的衬底材料的温度的光学方法。 在该方法中,使用衬底的带边缘光谱的膝盖的位置和宽度来确定温度。 膝盖的宽度用于校正由于以下原因引起的膝盖位置的杂散位移:(i)基底上沉积层中的薄膜干扰; (ii)衬底背面的各向异性散射; (iii)在衬底的带边缘附近吸收的沉积层的吸收率的光谱变化; 和(iv)用于获得衬底的带边缘光谱的波长选择性检测系统的光学响应中的光谱依赖性。 使用膝部的调整位置从预定的校准曲线计算衬底温度。 该算法适用于实时应用,因为从频谱本身获得了修正膝盖位置所需的信息。 在GaAs和InP中使用吸收边缘的温度依赖形状的模型,将基板厚度和用于确定带边缘光谱的方法的光学几何形状的影响结合到校准曲线中。

    System for measuring carrier lifetime of semiconductor wafers
    4.
    发明授权
    System for measuring carrier lifetime of semiconductor wafers 失效
    用于测量半导体晶片的载流子寿命的系统

    公开(公告)号:US4578641A

    公开(公告)日:1986-03-25

    申请号:US422669

    申请日:1982-09-24

    申请人: J. Thomas Tiedje

    发明人: J. Thomas Tiedje

    CPC分类号: G01R31/2656 Y10S136/29

    摘要: A contactless rf technique for measurement of the carrier lifetime from the photoconductivity induced in silicon wafers by a flash of infrared light. The carrier lifetime is inferred from the photoconductivity decay.

    摘要翻译: 一种非接触射频技术,用于通过红外光闪光测量在硅晶片中感生的光电导率的载流子寿命。 载流子寿命由光电导衰减推导出来。

    Optical apparatus and method for measuring temperature of a substrate
material with a temperature dependent band gap
    5.
    发明授权
    Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap 失效
    用于测量具有温度依赖带隙的衬底材料的温度的光学装置和方法

    公开(公告)号:US5568978A

    公开(公告)日:1996-10-29

    申请号:US343097

    申请日:1994-11-21

    IPC分类号: G01K11/14 G01K11/00 G01J5/48

    CPC分类号: G01K11/14

    摘要: An optical method for measuring the temperature of a substrate material with a temperature dependent bandgap. The substrate is illuminated with a broad spectrum lamp and the bandgap is determined from the spectrum of the diffusely scattered light. The spectrum of the light from the lamp is sufficiently broad that it covers the spectral range above and below the bandgap of the substrate. Wavelengths corresponding to photon energies less than the bandgap of the substrate are transmitted through the substrate and are reflected from the back surface of the substrate as well as from the front surface while the wavelengths corresponding to photon energies larger than the bandgap are reflected only from the front surface. If the front surface is polished the front surface reflection will be specular while if the back surface is rough the reflection from the back surface will be non-specular. The back surface reflection is detected with a detector in a non-specular location. From the wavelength of the onset of the non-specular reflection the bandgap can be determined which gives the temperature. The temperature is determined from the knee in the diffuse reflectance spectrum near the bandgap.

    摘要翻译: 一种用于测量具有温度依赖带隙的衬底材料的温度的光学方法。 用广谱灯照射衬底,并从扩散散射光的光谱确定带隙。 来自灯的光的光谱足够宽,以使其覆盖在衬底的带隙之上和之下的光谱范围。 对应于小于衬底的带隙的光子能量的波长透射通过衬底,并且从衬底的背面以及从正面反射,而对应于大于带隙的光子能量的波长仅从 前面 如果前表面被抛光,则前表面反射将是镜面的,而如果背面粗糙,则背面的反射将是非镜面的。 用非镜面位置的检测器检测背面反射。 从非镜面反射的起始波长可以确定给出温度的带隙。 在带隙附近的漫反射光谱中,从膝盖确定温度。

    Method and apparatus for controllable frustration of total internal
reflection
    7.
    发明授权
    Method and apparatus for controllable frustration of total internal reflection 失效
    全内反射可控挫败的方法和装置

    公开(公告)号:US5999307A

    公开(公告)日:1999-12-07

    申请号:US923431

    申请日:1997-09-04

    摘要: A method and apparatus for facilitating controllable switching an interface between a reflective state in which light incident upon the interface undergoes total internal reflection, and a non-reflective state in which total internal reflection is prevented at the interface. The apparatus incorporates a member (preferably an elastomer) which is deformable with respect to the interface. The member's Young's Modulus in portions of the member adjacent the interface is substantially greater (i.e. stiffer) than the member's Young's Modulus in portions of the member away from the interface. The stiffened portion of the member adjacent the interface may be in the form of a microstructure. A pair of electrodes coupled to a voltage source can be provided to controllably deform the member into optical contact with the interface, within a continuously variable range of optical contact values, to produce the non-reflective state in selectably varying degrees.

    摘要翻译: 一种用于促进在入射到界面上的光经受全内反射的反射状态之间的界面的可控切换的方法和装置,以及在该界面处防止全内反射的非反射状态。 该装置包括相对于界面可变形的构件(优选弹性体)。 邻近界面的部件中的部件的杨氏模量比部件远离接口部分的部件的杨氏模量大得多(即更硬)。 邻近界面的构件的加强部分可以是微结构的形式。 可以提供耦合到电压源的一对电极,以在光学接触值的连续可变范围内可控地使构件变形成与界面的光学接触,以可选择地变化的程度产生非反射状态。

    Optical apparatus and method for measuring temperature of a substrate
material with a temperature dependent band gap
    8.
    发明授权
    Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap 失效
    用于测量具有温度依赖带隙的衬底材料的温度的光学装置和方法

    公开(公告)号:US5388909A

    公开(公告)日:1995-02-14

    申请号:US121521

    申请日:1993-09-16

    IPC分类号: G01K11/14 G01K11/00 G01J5/48

    CPC分类号: G01K11/14

    摘要: An optical method and apparatus for measuring the temperature of a substrate material with a temperature dependent bandgap. The substrate is illuminated with a broad spectrum lamp and the bandgap is determined from the spectrum of the diffusely scattered light. The spectrum of the light from the lamp is sufficiently broad that it covers the spectral range above and below the bandgap of the substrate. Wavelengths corresponding to photon energies less than the bandgap of the substrate are transmitted through the substrate and are reflected from the back surface of the substrate as well as from the front surface while the wavelengths corresponding to photon energies larger than the bandgap are reflected only from the front surface. If the front surface is polished the front surface reflection will be specular while if the back surface is rough the reflection from the back surface will be non-specular. The back surface reflection is detected with a detector in a non-specular location. From the wavelength of the onset of the non-specular reflection the bandgap can be determined which gives the temperature. The temperature is determined from the knee in the diffuse reflectance spectrum near the bandgap.

    摘要翻译: 一种用于测量具有温度依赖带隙的衬底材料的温度的光学方法和装置。 用广谱灯照射衬底,并从扩散散射光的光谱确定带隙。 来自灯的光的光谱足够宽,以使其覆盖在衬底的带隙之上和之下的光谱范围。 对应于小于衬底的带隙的光子能量的波长透射通过衬底,并且从衬底的背面以及从正面反射,而对应于大于带隙的光子能量的波长仅从 前面 如果前表面被抛光,则前表面反射将是镜面的,而如果背面粗糙,则背面的反射将是非镜面的。 用非镜面位置的检测器检测背面反射。 从非镜面反射的起始波长可以确定给出温度的带隙。 在带隙附近的漫反射光谱中,从膝盖确定温度。

    Solar cell made from amorphous superlattice material
    10.
    发明授权
    Solar cell made from amorphous superlattice material 失效
    太阳能电池由无定形超晶格材料制成

    公开(公告)号:US4598164A

    公开(公告)日:1986-07-01

    申请号:US539470

    申请日:1983-10-06

    摘要: A semiconductor device which includes an active region including a superlattice amorphous material wherein the energy gap has a predetermined value. A preferred embodiment of the device is a solar cell. In another embodiment of the present invention, the device is a tandem solar cell which includes a first active region including a superlattice material wherein the bandgap has a first predetermined value; a second active region including a second superlattice material wherein the bandgap has a second predetermined value different from said first predetermined value; a means for electrically interconnecting said first and second active regions such that current may flow between said first and second active regions.

    摘要翻译: 一种半导体器件,其包括具有超晶格非晶材料的有源区,其中所述能隙具有预定值。 该装置的优选实施例是太阳能电池。 在本发明的另一个实施例中,该装置是串联太阳能电池,其包括包括超晶格材料的第一有源区,其中该带隙具有第一预定值; 包括第二超晶格材料的第二有源区,其中所述带隙具有不同于所述第一预定值的第二预定值; 用于将所述第一和第二有源区域电互连的装置,使得电流可以在所述第一和第二有源区域之间流动。