公开(公告)号：US07235440B2

公开(公告)日：2007-06-26

申请号：US10630969

申请日：2003-07-31

申请人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/8242

CPC分类号： H01L21/28194 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.

摘要翻译： 使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。 待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。 处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。 本发明的一个实施例提供了Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度 在基材上变化小于约1A。

公开(公告)号：US07202186B2

公开(公告)日：2007-04-10

申请号：US10630970

申请日：2003-07-31

申请人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  C23C16/308 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67098 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.

摘要翻译： 使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。 要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。 处理可以使用间歇式处理室或单晶片处理室进行。

公开(公告)号：US20050026459A1

公开(公告)日：2005-02-03

申请号：US10630970

申请日：2003-07-31

申请人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： C23C16/30 ,  H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  C23C16/308 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67098 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.

摘要翻译： 使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。 要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。 处理可以使用间歇式处理室或单晶片处理室进行。

公开(公告)号：US20050026453A1

公开(公告)日：2005-02-03

申请号：US10630969

申请日：2003-07-31

申请人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31

CPC分类号： H01L21/28194 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.

摘要翻译： 使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。 待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。 处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。 本发明的一个实施例提供Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在衬底上变化小于约1A。

公开(公告)号：US06974779B2

公开(公告)日：2005-12-13

申请号：US10662875

申请日：2003-09-16

申请人： David L O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

发明人： David L O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/02181 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31658 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

公开(公告)号：US20050059259A1

公开(公告)日：2005-03-17

申请号：US10662875

申请日：2003-09-16

申请人： David O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

发明人： David O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/02181 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31658 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

摘要翻译： 提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。 扩散过滤层控制表面的氧化。 可以在氧化过程中形成界面氧化物层，该氧化过程在沉积高k层到扩散过滤层上之后或在沉积高k层到扩散过滤层上之后进行。

公开(公告)号：US07501352B2

公开(公告)日：2009-03-10

申请号：US11093260

申请日：2005-03-30

申请人： Masanobu Igeta ,  Cory Wajda ,  David L. O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

发明人： Masanobu Igeta ,  Cory Wajda ,  David L. O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

IPC分类号： H01L21/31

CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662

摘要： The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.

摘要翻译： 本发明通常提供了在基板上制备氮氧化物膜的方法。 衬底的表面暴露于通过紫外线（UV）辐射诱导的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基，以在表面上形成氧化膜。 氧化物膜暴露于通过等离子体诱导的包含至少一种包含氮的分子组合物的等离子体诱导的解离形成的氮自由基，所述分子组合物包含氮，使用基于微波照射的等离子体通过具有多个狭缝的平面天线构件来氮化氧化膜并形成 氧氮化物膜。

公开(公告)号：US20060228902A1

公开(公告)日：2006-10-12

申请号：US11093260

申请日：2005-03-30

申请人： Masanobu Igeta ,  Cory Wajda ,  David O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

发明人： Masanobu Igeta ,  Cory Wajda ,  David O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

IPC分类号： H01L21/31

CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662

摘要： The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.

公开(公告)号：US20060228871A1

公开(公告)日：2006-10-12

申请号：US11093262

申请日：2005-03-30

申请人： Cory Wajda ,  Kristen Scheer ,  Toshihara Furakawa

发明人： Cory Wajda ,  Kristen Scheer ,  Toshihara Furakawa

IPC分类号： B01J19/08 ,  H01L21/20

CPC分类号： H01L21/3144 ,  C23C8/28 ,  C23C8/36

摘要： A method for preparing an oxynitride film on a substrate comprising forming the oxynitride film by exposing a surface of the substrate to oxygen radicals and nitrogen radicals formed by plasma induced dissociation of a process gas comprising nitrogen and oxygen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits.

公开(公告)号：US07470591B2

公开(公告)日：2008-12-30

申请号：US11239321

申请日：2005-09-30

申请人： David L. O'Meara ,  YoungJong Lee ,  Cory Wajda

发明人： David L. O'Meara ,  YoungJong Lee ,  Cory Wajda

IPC分类号： H01L21/00

CPC分类号： H01L21/28194 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31122 ,  H01L29/517 ,  H01L29/78

摘要： A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.

摘要翻译： 提供了一种用于降低金属含量并控制栅叠层中的栅介质层的金属深度分布的方法。 该方法包括在处理室中提供衬底，在衬底上沉积栅极电介质层，其中栅极电介质层包括金属元素。 从栅介质层的至少一部分选择性地蚀刻金属元件，以形成具有降低的金属含量的蚀刻栅极电介质层，并且在蚀刻的栅极介电层上形成栅极电极层。