中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

69 records (took 0.037 seconds)

    PRECURSORS FOR SELECTIVE DEPOSITION OF SILICON-CONTAINING FILMS
    1.
    发明申请
    PRECURSORS FOR SELECTIVE DEPOSITION OF SILICON-CONTAINING FILMS 有权

    公开(公告)号：US20250074927A1

    公开(公告)日：2025-03-06

    申请号：US18809639

    申请日：2024-08-20

    Applicant: ENTEGRIS, INC.

    Inventor： Drew Michael Hood ,  Thomas M. Cameron ,  Bryan C. Hendrix

    IPC: C07F7/02 ,  C07F7/18 ,  C23C16/40 ,  C23C16/455

    Abstract: Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.

    Chemical vapor deposition processes using ruthenium precursor and reducing gas
    4.
    发明授权
    Chemical vapor deposition processes using ruthenium precursor and reducing gas 有权

    公开(公告)号：US11371138B2

    公开(公告)日：2022-06-28

    申请号：US16673470

    申请日：2019-11-04

    Applicant: ENTEGRIS, INC.

    Inventor： Philip S. H. Chen ,  Bryan C. Hendrix ,  Thomas H. Baum

    IPC: C23C16/18 ,  H01L21/285 ,  C23C18/42 ,  C23C18/44 ,  C23C16/02 ,  C23C16/06

    Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

    Heat transfer to ampoule trays
    5.
    发明授权
    Heat transfer to ampoule trays 有权

    公开(公告)号：US10895347B2

    公开(公告)日：2021-01-19

    申请号：US16162560

    申请日：2018-10-17

    Applicant: Entegris, Inc.

    Inventor： Bryan C. Hendrix ,  Scott L. Battle ,  John N. Gregg

    IPC: C23C16/448 ,  F17C7/04 ,  F28D21/00

    Abstract: The invention is directed to a vaporizer or ampoule assembly with improved heat transfer between a vaporizer vessel body and at least one support tray located therein. In particular, there is provided a heat transfer enhancing member that is disposed between a vessel body and support tray. In one example of a heat transfer enhancing member or assembly there is included a heat conductive mesh or liner around totally or partially around the support tray that is wedged in between the support tray and the interior diameter or wall of the vessel body. In a related embodiment, the heat transfer enhancing member includes an expandable support tray sidewall to increase physical contact between the support tray and the vessel body interior wall.

    Vapor phase etching of hafnia and zirconia
    6.
    发明授权
    Vapor phase etching of hafnia and zirconia 有权

    公开(公告)号：US10002772B2

    公开(公告)日：2018-06-19

    申请号：US15613773

    申请日：2017-06-05

    Applicant: Entegris, Inc.

    Inventor： Bryan C. Hendrix

    IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/311

    CPC classification number: H01L21/31122

    Abstract: A method is described for vapor phase etching of oxide material including at least one of hafnia (HfO2) and zirconia (ZrO2), in the absence of plasma exposure of the oxide material. The method involves contacting the oxide material with an etching medium including at least one of phosphorus chloride and tungsten chloride under conditions producing a removable fluid reaction product, and removing the removable fluid reaction product. The etching process may be controllably carried out by use of pressure swings, temperature swings, and/or modulation of partial pressure of Hf or Zr chloride in the reaction, e.g., to achieve precision etch removal in the manufacture of semiconductor devices such as 3D NAND, sub-20 nm DRAMs, and finFETs.

    PRECURSORS FOR SILICON DIOXIDE GAP FILL
    8.
    发明申请
    PRECURSORS FOR SILICON DIOXIDE GAP FILL 审中-公开
    硅二氧化硅填料的前身

    公开(公告)号：US20160225615A1

    公开(公告)日：2016-08-04

    申请号：US15093865

    申请日：2016-04-08

    Applicant: Entegris, Inc.

    Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    IPC: H01L21/02 ,  H01L29/06

    CPC classification number: H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

    Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

    Abstract translation: 描述了一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底，并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。 还描述了制造半导体产品的方法，其涉及使用特定的硅前体组合物，用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。 前体填充组合物可以包括硅和锗，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分，以消除或最小化固化沟槽填充材料中的接缝形成。

Patent Agency Ranking