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公开(公告)号：US20240243159A1
公开(公告)日：2024-07-18
申请号：US18535731
申请日：2023-12-11
Inventor： Jeong Woo PARK , Sang Hoon KIM , Dongwoo SUH
IPC: H01L27/146
CPC classification number: H01L27/14649 , H01L27/14636 , H01L27/14683
Abstract: The present disclosure relates to an image sensor including a silicon substrate having a first conductivity type, and a read out integrated circuit (ROIC) and a photodetector disposed on the silicon substrate. The ROIC and the photodetector are spaced apart from each other in a first direction parallel to a top surface of the silicon substrate. The photodetector includes a first germanium pattern having the first conductivity type and a semiconductor pattern having a second conductivity type different from the first conductivity type, which are laminated in a direction perpendicular to the top surface of the silicon substrate. The first germanium pattern contacts the silicon substrate.
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公开(公告)号：US20230402529A1
公开(公告)日：2023-12-14
申请号：US18327417
申请日：2023-06-01
Inventor： Sang Hoon KIM , Dongwoo SUH , JINHA KIM , Jeong Woo PARK , Seong Hyun LEE , Wangjoo LEE
IPC: H01L29/66 , H01L29/423 , H01L29/10 , H01L29/786
CPC classification number: H01L29/66545 , H01L29/66553 , H01L29/42392 , H01L29/1054 , H01L29/78696
Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming alternating layers, where a silicon germanium layer and a silicon layer are alternately stacked, on a substrate, etching the alternating layers to form a fin structure protruding onto the substrate and then forming a silicon nitride film on a surface and a sidewall of each of the alternating layers having the fin structure, sequentially forming a dummy gate and a silicon oxide film on the alternating layers with the silicon nitride film therebetween and then forming a gate spacer on a sidewall of the dummy gate, etching the silicon nitride film upward exposed, and then, etching the alternating layers by using the silicon oxide film, and selectively forming an inner spacer in a sidewall of each of silicon germanium layers among the silicon germanium layers and silicon layers of the etched alternating layers.
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公开(公告)号：US20180331504A1
公开(公告)日：2018-11-15
申请号：US16030417
申请日：2018-07-09
Inventor： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM
CPC classification number: H01S5/3223 , H01S5/021 , H01S5/041 , H01S5/0424 , H01S5/0425 , H01S5/105 , H01S5/187 , H01S5/3086 , H01S5/3224 , H01S5/4006
Abstract: Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
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公开(公告)号：US20170269298A1
公开(公告)日：2017-09-21
申请号：US15607726
申请日：2017-05-30
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , myung joon KWACK
IPC: G02B6/12 , G02B6/13 , H01L27/15 , G02B6/42 , H01L21/762
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20160211402A1
公开(公告)日：2016-07-21
申请号：US14812981
申请日：2015-07-29
Inventor： Jiho JOO , Gyungock KIM , Myungjoon KWACK , Sang Hoon KIM , Sun Ae KIM , In Gyoo KIM , Jaegyu PARK , Jin Hyuk OH , Ki Seok JANG
IPC: H01L31/109 , H01L31/0224 , H01L31/0352 , H01L31/0304 , H01L31/028
CPC classification number: H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521
Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
Abstract translation: 提供了一种光电探测器，其包括衬底，衬底上的第一掺杂区域，具有环形结构的第二掺杂区域，其中第二掺杂区域设置在衬底中，围绕第一掺杂区域并且与 第一掺杂区域，第一掺杂区域上的光吸收层，光吸收层上的接触层，接触层上的第一电极和第二掺杂区域上的第二电极。
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Patent Agency Ranking
公开(公告)号：US20140175510A1
公开(公告)日：2014-06-26
申请号：US14194723
申请日：2014-03-01
Inventor： Dongwoo SUH , Sang Hoon KIM , Gyungock KIM , JiHo JOO
IPC: H01L31/028
CPC classification number: H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02667 , H01L31/103 , H01L31/1808 , H01L31/1872 , Y02E10/50 , Y02P70/521
Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。
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公开(公告)号：US20170294762A1
公开(公告)日：2017-10-12
申请号：US15230313
申请日：2016-08-05
Inventor： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM
CPC classification number: H01S5/3223 , H01S5/021 , H01S5/041 , H01S5/0424 , H01S5/0425 , H01S5/105 , H01S5/187 , H01S5/3086 , H01S5/3224 , H01S5/4006
Abstract: Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
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公开(公告)号：US20170261705A1
公开(公告)日：2017-09-14
申请号：US15607717
申请日：2017-05-30
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , Myung Joon KWACK
IPC: G02B6/42 , H01L27/15 , H01L31/167 , H01L21/762 , G02B6/13 , G02B6/12
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20160260805A1
公开(公告)日：2016-09-08
申请号：US15056660
申请日：2016-02-29
Inventor： Sang Hoon KIM , Gyungock KIM , In Gyoo KIM
IPC: H01L29/161 , H01L21/3105 , H01L21/02 , H01L29/06 , H01L21/311
CPC classification number: H01L29/161 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647
Abstract: Provided is a germanium-on-insulator substrate. The germanium-on-insulator substrate includes a bulk silicon substrate, an oxide film which is disposed on the bulk silicon substrate and has a first region exposing a portion of the bulk silicon substrate, a silicon layer which covers a portion of the top surface of the oxide film and does not cover the first region, a germanium layer which contacts the bulk silicon substrate exposed through the first region and is disposed on the oxide film, and an insulating layer which covers the oxide film and the silicon layer and exposes the top surface of the germanium layer.
Abstract translation: 提供绝缘体上的锗基板。 绝缘体上的衬底包括体硅衬底，氧化膜，其设置在体硅衬底上并且具有暴露本体硅衬底的一部分的第一区域;覆盖顶部表面的一部分的硅层; 氧化膜并且不覆盖第一区域，接触通过第一区域暴露的体硅衬底并设置在氧化物膜上的锗层，以及覆盖氧化物膜和硅层并暴露顶部的绝缘层 锗层的表面。
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公开(公告)号：US20150146755A1
公开(公告)日：2015-05-28
申请号：US14279839
申请日：2014-05-16
Inventor： In Gyoo KIM , Sang Hoon KIM , Jaegyu PARK , Gyungock KIM , Ki Seok JANG
CPC classification number: H01S5/1021 , G02B6/12 , G02B6/122 , G02B6/1228 , G02B6/136 , G02B2006/12061 , G02B2006/12147 , H01S5/021 , H01S5/026 , H01S5/2086 , H01S5/2272 , H01S5/3223 , H01S2301/176 , H01S2304/00
Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
Abstract translation: 提供一种制造半导体激光器的方法。 该方法包括：提供包括第一区域和第二区域的半导体衬底; 通过使用选择性外延生长工艺在半导体衬底的第二区域中形成硅单晶层; 通过使用硅单晶层形成光耦合器; 以及通过选择性外延生长工艺在半导体衬底的第一区域中形成包括锗单晶层的激光芯结构。
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