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公开(公告)号：US11827973B2
公开(公告)日：2023-11-28
申请号：US17688613
申请日：2022-03-07
Applicant: ENTEGRIS, INC.
Inventor： Oleg Byl , Ying Tang , Joseph R. Despres , Joseph D. Sweeney , Sharad N. Yedave
IPC: C23C14/48 , C23C14/56 , H01J37/08 , H01J37/317
CPC classification number: C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022
Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.
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公开(公告)号：US11621148B2
公开(公告)日：2023-04-04
申请号：US17024261
申请日：2020-09-17
Applicant: ENTEGRIS, INC.
Inventor： Ying Tang , Bryan C. Hendrix , Oleg Byl , Sharad N. Yedave
Abstract: Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.
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公开(公告)号：US20210370259A1
公开(公告)日：2021-12-02
申请号：US17398891
申请日：2021-08-10
Applicant: ENTEGRIS, INC.
Inventor： Lawrence H. Dubois , Donald J. Carruthers , Melissa A. Petruska , Edward A. Sturm , Shaun M. Wilson , Steven M. Lurcott , Bryan C. Hendrix , Joseph D. Sweeney , Michael J. Wodjenski , Oleg Byl , Ying Tang , Joseph R. Despres , Matthew Thomas Marlow , Christopher Scannell , Daniel Elzer , Kavita Murthi
Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.
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4.发明授权公开(公告)号：US11062906B2
公开(公告)日：2021-07-13
申请号：US14912380
申请日：2014-08-14
Applicant: Entegris, Inc.
Inventor： Ying Tang , Joseph D. Sweeney , Tianniu Chen , James J. Mayer , Richard S. Ray , Oleg Byl , Sharad N. Yedave , Robert Kaim
IPC: H01L21/265 , H01J37/317 , H01J37/32
Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.
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公开(公告)号：US20200206717A1
公开(公告)日：2020-07-02
申请号：US15773652
申请日：2016-11-04
Applicant: ENTEGRIS, INC.
Inventor： Lawrence H. Dubois , Donald J. Carruthers , Melissa A. Petruska , Edward A. Sturm , Shaun M. Wilson , Steven M. Lurcott , Bryan C. Hendrix , Joseph D. Sweeney , Michael J. Wodjenski , Oleg Byl , Ying Tang , Joseph R. Despres , Matthew Thomas Marlow , Christopher Scannell , Daniel Elzer , Kavita Murthi
Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.
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Patent Agency Ranking
公开(公告)号：US20190078696A1
公开(公告)日：2019-03-14
申请号：US15743109
申请日：2016-07-08
Applicant: Entegris, Inc.
Inventor： Glenn M. Tom , Karl W. Olander , James A. Dietz , Michael J. Wodjenski , Edward A. Sturm , Susan K. Dimascio , Luping Wang , James V. McManus , Steven M. Lurcott , Jose I. Amo , Paul J. Marganski , Joseph D. Sweeney , Shaun M. Wilson , Steven E. Bishop , Greg Nelson , Donald J. Carruthers , Sharad N. Yedave , Ying Tang , Joseph Despres , Barry Chambers , Richard Ray , Daniel Elzer
Abstract: Fluid supply packages of varying types are described, which are useful for delivery of fluids to fluid-utilizing facilities such as semiconductor manufacturing facilities, solar panel manufacturing facilities, and flat-panel display manufacturing facilities. The fluid supply packages include fluid supply vessels and valve heads of varied configuration, as useful to constitute fluid supply packages that are pressure-regulated and/or adsorbent-based in character.
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公开(公告)号：US10109488B2
公开(公告)日：2018-10-23
申请号：US15507859
申请日：2015-08-19
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Sharad N. Yedave , Joseph D. Sweeney , Barry Lewis Chambers , Ying Tang
IPC: H01J37/00 , H01L21/265 , H01J37/08 , H01J37/317 , H01J37/244 , H01L31/18
Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.
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公开(公告)号：US11315791B2
公开(公告)日：2022-04-26
申请号：US16713381
申请日：2019-12-13
Applicant: ENTEGRIS, INC.
Inventor： Ying Tang , Sharad N. Yedave
IPC: H01L21/265 , H01J37/317 , H01J37/32
Abstract: A method and system for fluorine ion implantation is described, where a fluorine compound capable of forming multiple fluorine ionic species is introduced into an ion implanter at a predetermined flow rate. Fluorine ionic species are generated at a predetermined arc power and source magnetic field, providing an optimized beam current for the desired fluorine ionic specie. The desired fluorine ionic specie, such as one having multiple fluorine atoms, is implanted into the substrate under the selected operating conditions.
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公开(公告)号：US10920087B2
公开(公告)日：2021-02-16
申请号：US16098728
申请日：2017-03-27
Applicant: ENTEGRIS, INC.
Inventor： Steven Bishop , Sharad N. Yedave , Oleg Bly , Joseph Sweeney , Ying Tang
IPC: C09D1/00 , H01J37/08 , C01B35/06 , H01J37/317 , H01J37/32
Abstract: A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.
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公开(公告)号：US10892137B2
公开(公告)日：2021-01-12
申请号：US16564965
申请日：2019-09-09
Applicant: ENTEGRIS, INC.
Inventor： Joseph D. Sweeney , Joseph R. Despres , Ying Tang , Sharad N. Yedave , Edward E. Jones , Oleg Byl
IPC: H01J37/08 , H01J37/317
Abstract: An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.
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