Fluid processing systems and methods
    5.
    发明授权
    Fluid processing systems and methods 有权
    流体处理系统和方法

    公开(公告)号:US09586188B2

    公开(公告)日:2017-03-07

    申请号:US14703467

    申请日:2015-05-04

    申请人: ENTEGRIS, INC.

    摘要: Systems and methods for delivering fluid-containing feed materials to process equipment are disclosed. A liner-based pressure dispensing vessel is subjected to filling by application of vacuum between the liner and overpack. Multiple feed material flow controllers of different calibrated flow ranges may be selectively operated in parallel for a single feed material. Feed material blending and testing for scale-up may be performed with feed materials supplied by multiple liner-based pressure dispensing containers. A gravimetric system may be used to determine concentration of at least one component of a multi-component solution or mixture.

    摘要翻译: 公开了用于将含流体的进料传送到加工设备的系统和方法。 基于衬管的压力分配容器通过在衬套和外包装之间施加真空而进行填充。 不同校准流量范围的多个进料流量控制器可以针对单个进料进行选择性并行操作。 用于放大的进料混合和测试可以通过由多个基于衬管的压力分配容器供应的进料进行。 重量分析系统可用于测定多组分溶液或混合物中至少一种组分的浓度。

    TPIR APPARATUS FOR MONITORING TUNGSTEN HEXAFLUORIDE PROCESSING TO DETECT GAS PHASE NUCLEATION, AND METHOD AND SYSTEM UTILIZING SAME
    6.
    发明申请
    TPIR APPARATUS FOR MONITORING TUNGSTEN HEXAFLUORIDE PROCESSING TO DETECT GAS PHASE NUCLEATION, AND METHOD AND SYSTEM UTILIZING SAME 审中-公开
    用于监测硝化氢处理以检测气相相关核的TPIR装置,以及使用其的方法和系统

    公开(公告)号:US20160281238A1

    公开(公告)日:2016-09-29

    申请号:US15156421

    申请日:2016-05-17

    申请人: Entegris, Inc.

    IPC分类号: C23C16/52 C23C16/455

    摘要: Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.

    摘要翻译: 用于监测气相沉积装置的装置和方法,其中气体混合物可以在支持这种行为的工艺条件下经历气相成核(GPN)和/或化学侵蚀产品装置。 该装置包括被布置成通过气体混合物的样本传送源辐射的辐射源,以及布置成接收由源辐射与气体混合物样品的相互作用产生的输出辐射的热电堆检测器组件,并且响应地产生指示 发生这种发生时气相成核和/或化学侵蚀的发生。 这种监测装置和方法在钨CVD处理中可用于实现无GPN或化学侵蚀的高速钨膜生长。