公开(公告)号：US20190061095A1

公开(公告)日：2019-02-28

申请号：US16080960

申请日：2017-02-13

Applicant: FUJIMI INCORPORATED

Inventor： Shinichiro TAKAMI ,  Yusuke KAWASAKI

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/02

Abstract: Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry S1 and a second polishing slurry S2 to a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry S1 comprises an abrasive A1 and a water-soluble polymer P1. The polishing removal rate of the first polishing slurry S1 is higher than that of the second polishing slurry S2.

公开(公告)号：US20240101867A1

公开(公告)日：2024-03-28

申请号：US18529465

申请日：2023-12-05

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Hiroyuki ODA ,  Yasuaki ITO ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

公开(公告)号：US20230136485A1

公开(公告)日：2023-05-04

申请号：US17914821

申请日：2021-03-17

Applicant: FUJIMI INCORPORATED

Inventor： Shinichiro TAKAMI

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/02

Abstract: Provided is a polishing composition that allows yielding a smooth surface comparable with or more than a surface produced by an abrasive-free polishing composition, and can be preferably used under both condition of low pressure and high pressure, in polishing of a hardness material. The polishing composition is a polishing composition for polishing a material having a Vickers hardness of 1500 Hv or more. The polishing composition contains particles and an oxidant, and the content of the particles is less than 400 ppm.

公开(公告)号：US20160189973A1

公开(公告)日：2016-06-30

申请号：US14910803

申请日：2014-06-12

Applicant: FUJIMI INCORPORATED

Inventor： Makoto TABATA ,  Shinichiro TAKAMI ,  Shogaku IDE

IPC: H01L21/306 ,  C09G1/02

CPC classification number: H01L21/30625 ,  B24B37/28 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024

Abstract: [Problem] To provide a method for producing a polished object, which can remarkably reduce a haze level on a surface of the object to be polished while defects are significantly reduced.[Solution] A method for producing a polished object, which includes a double-side polishing step in which an object to be polished is subjected to double-side polishing using a double-side polishing composition including first abrasive grains having an average primary particle diameter of 40 nm or more and a nitrogen-containing water-soluble polymer to obtain a double-side polished object; and a single-side polishing step in which the double-side polished object is subjected to single-side polishing using a single-side polishing composition including second abrasive grains having an average primary particle diameter of 40 nm or less and a water-soluble polymer, and in which a ratio of an average primary particle diameter (A) of the first abrasive grains with respect to an average primary particle diameter (B) of the second abrasive grains (A)/(B) is more than 1 and 2.5 or less.

Abstract translation: 本发明提供一种抛光对象的制造方法，其能够显着地降低被抛光体的表面上的雾度，同时缺陷明显减少。 [解决方案]一种抛光对象的制造方法，其包括双面研磨工序，其中使用双面抛光组合物进行双面抛光，其中使用双面抛光组合物，所述双面抛光组合物包括具有平均初级粒径 为40nm以上，含氮水溶性聚合物为双面抛光对象物; 以及使用单平面抛光组合物对双面抛光对象进行单面抛光的单面抛光步骤，该单面抛光组合物包括平均一次粒径为40nm以下的第二磨料颗粒和水溶性聚合物 ，其中第一磨粒的平均一次粒径（A）相对于第二磨粒（A）/（B）的平均一次粒径（B）的比例大于1和2.5或 减。

公开(公告)号：US20240117219A1

公开(公告)日：2024-04-11

申请号：US18275321

申请日：2022-02-02

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki ITO ,  Hiroyuki ODA ,  Yuichiro NAKAGAI ,  Shogaku IDE ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/30625

Abstract: Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.

公开(公告)号：US20210024781A1

公开(公告)日：2021-01-28

申请号：US17040355

申请日：2019-03-22

Applicant: FUJIMI INCORPORATED

Inventor： Hiroyuki ODA ,  Hiroki KON ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  H01L21/304

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group. The slurry S1 does not contain the compound Cpho or a concentration [% by weight] of the compound Cpho in the slurry S1 is lower than a concentration [% by weight] of the compound Cpho in the slurry S2.

公开(公告)号：US20240117218A1

公开(公告)日：2024-04-11

申请号：US18275285

申请日：2022-02-02

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Hiroyuki ODA ,  Yasuki ITO ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

公开(公告)号：US20240110080A1

公开(公告)日：2024-04-04

申请号：US18529763

申请日：2023-12-05

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Yasuaki ITO ,  Hiroyuki ODA ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]:


satisfying both of 500≤(C1/W1) and 0.04≤(C2/C1);  [A]



satisfying both of 200≤(C1/√(W1)) and 8≤C2; and  [B]



satisfying both of 500≤(C1/W1) and 8≤C2.  [C]

公开(公告)号：US20230235194A1

公开(公告)日：2023-07-27

申请号：US17927089

申请日：2021-05-24

Applicant: FUJIMI INCORPORATED

Inventor： Shinichiro TAKAMI

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1409

Abstract: Provided is a polishing method that can efficiently achieve a surface of a super-hard material from which latent defects are precisely eliminated. The polishing method provided by the present invention is used for polishing a substrate made of a material having a Vickers hardness of 1500 Hv or higher. The polishing method includes: a step of carrying out preliminary polishing on the substrate using a preliminary polishing composition; and a step of carrying out final polishing on the preliminarily polished substrate using a final polishing composition. Here, a surface roughness RaPRE of the preliminarily polished substrate measured by an AFM is 0.1 nm or less, and a polishing removal in the final polishing step is 0.3 µm or more.

公开(公告)号：US20220243093A1

公开(公告)日：2022-08-04

申请号：US17619340

申请日：2020-06-15

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki ITO ,  Shinichiro TAKAMI ,  Yoshio MORI

IPC: C09G1/02

Abstract: Provided is a polishing composition that can reduce the friction force against an object to be polished while maintaining a favorable polishing removal rate. The polishing composition provided by the present invention contains water, an abrasive, and a composite metal oxide as an oxidant. The polishing composition further contains an anionic polymer. In some preferred embodiments, the polishing composition contains a permanganate as the composite metal oxide. The polishing composition is suitable for polishing a material having a Vickers hardness of 1500 Hv or higher.