摘要:
A method of producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and to a full reaction, yielding high purity crystalline GaN powders with a stoichiometric nitrogen concentration and a hexagonal wurtzite structure.
摘要:
A simple, inexpensive method of producing in bulk a doped metal nitride powder that exhibits a high luminescent efficiency, by first forming a metal-dopant alloy and then reacting the alloy with high purity ammonia under controlled conditions in a reactor. The resulting doped metal nitride powders will exhibit a luminescent efficiency that greatly exceeds that seen in pure undoped GaN powders, doped GaN thin films, and ZnS powders.
摘要:
A system is provided for controlling the time at which a durable item, such as a reticle used in a lithography process in semiconductor manufacturing, is requalified for use. A counting device counts occurrences of predefined events, such as the number of jobs in which the reticle is used or the number of times it is placed in a lithography tool. The reticle is not removed from use until a limiting number of jobs or tool placements is reached, or the reticle is needed for processing the requalification job. The system also includes a requalification device for the durable item.
摘要:
A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure. Stepper-framing-blades are moved over the dead zone to prevent additional exposures after an initial exposure. Alternatively, the workpiece can be fully exposed first by stepping a series of full steps, then going back to the starting position, making a nanostep to reset the starting position and re-exposing from the reset starting position in the same way with full steps from the nanostepped position.
摘要:
The present invention provides a method and an optical lithographic system which eliminates the standing wave effect typically observed in photoresists without the need for altering the thickness of the photoresist, utilizing an anti-reflective coating material, or changing the light source. Specifically, the present invention compensates for standing waves by exposing the photoresist with light from a light source at different phases. That is, in the present invention there is a change in light exposure from a single dose at one phase to a plurality of doses at different phases; therefore dispersing the effects of the standing wave at each of those phases which in turn eliminates the standing wave.
摘要:
An array of light emitting diodes coupled between a substrate and a transparent electrode include a pair of equipotential bus bars supplying electrical current simultaneously to at least two light emitting diodes, each located in its own area of transparent conductive material. In accordance with another aspect of the invention, a linear array of light emitting diodes has an electrode that includes a conductive island for each light emitting diode and a bus bar interconnecting and surrounding the conductive islands.
摘要:
Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要:
A display includes a light switch overlying a backlight and having at least two light shutters which do not, by themselves, convey information by the shape thereof. The lit area of the backlight is equal to or greater than the sum of the areas of the shutters within the area. The display can also include a graphics layer overlying the light switch. The information content of the display is changed by changing the graphics layer.
摘要:
A display includes a light switch overlying a backlight and having at least two light shutters which do not, by themselves, convey information by the shape thereof. The lit area of the backlight is equal to or greater than the sum of the areas of the shutters within the area. The display can also include a graphics layer overlying the light switch. The information content of the display is changed by changing the graphics layer.
摘要:
A light emitting semiconductor device including a light emitting diode having a cascading phosphor is improved by the particles of phosphor being coated with a moisture barrier layer and a buffer layer. Either the buffer layer overlies the moisture barrier layer or the moisture barrier layer overlies the buffer layer. In the latter case, the particles can further include a buffer layer over the moisture barrier layer. Preferred materials for the buffer layer are silica or alumina, which can include other oxides in the layer.