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    Method for Deposition
    1.
    发明申请
    Method for Deposition 审中-公开
    沉积方法

    公开(公告)号：US20150187981A1

    公开(公告)日：2015-07-02

    申请号：US14640595

    申请日：2015-03-06

    Applicant: First Solar, Inc.

    Inventor： Bastiaan Arie Korevaar ,  Roman Shuba

    IPC: H01L31/18

    CPC classification number: H01L31/1828 ,  C23C14/0021 ,  C23C14/024 ,  C23C14/0629

    Abstract: Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.

    Abstract translation: 本发明的实施例包括一种方法。 该方法包括从固体源材料制备第一蒸气，使碲化碲反应形成包含碲的第二蒸气，以及在沉积环境中在载体上沉积包含碲的涂层材料，沉积环境包括第一蒸气和第二蒸气 。 另一个实施例是系统。 该系统包括沉积室，其设置成容纳与载体流体连通的沉积环境; 设置成与沉积室流体连通的固体源材料; 和与沉积室流体连通的流体连通的碲化氢源。

    Spatially distributed CdS in thin film photovoltaic devices and their methods of manufacture
    2.
    发明授权
    Spatially distributed CdS in thin film photovoltaic devices and their methods of manufacture 有权
    薄膜光伏器件中空间分布的CdS及其制造方法

    公开(公告)号：US09000549B2

    公开(公告)日：2015-04-07

    申请号：US13676550

    申请日：2012-11-14

    Applicant: First Solar, Inc.

    Inventor： Robert Dwayne Gossman ,  Scott Daniel Feldman-Peabody ,  Bastiaan Arie Korevaar

    IPC: H01L31/02 ,  H01L31/18 ,  H01L31/073 ,  H01L31/0352

    CPC classification number: H01L31/073 ,  H01L31/035218 ,  Y02E10/543

    Abstract: Thin film photovoltaic devices are provided. The device includes a transparent substrate; a transparent conductive oxide layer on the transparent substrate; an n-type window layer on the transparent conductive oxide layer, an absorber layer on the n-type window layer, and a back contact layer on the absorber layer. The n-type window layer includes a plurality of nanoparticles spatially distributed within a medium, with the nanoparticles comprising cadmium sulfide. In one embodiment, the medium has an optical bandgap that is greater than about 3.0 eV (e.g., includes a material other than cadmium sulfide). Methods are also provided for such thin film photovoltaic devices.

    Abstract translation: 提供薄膜光伏器件。 该装置包括透明基板; 在透明基板上的透明导电氧化物层; 透明导电氧化物层上的n型窗口层，n型窗口层上的吸收层和吸收层上的背面接触层。 n型窗口层包括在介质内空间分布的多个纳米颗粒，纳米颗粒包含硫化镉。 在一个实施例中，介质具有大于约3.0eV的光学带隙（例如，包括除硫化镉之外的材料）。 还提供了这种薄膜光伏器件的方法。

    Method of processing a semiconductor assembly
    4.
    发明授权
    Method of processing a semiconductor assembly 有权
    半导体组件的处理方法

    公开(公告)号：US08728855B2

    公开(公告)日：2014-05-20

    申请号：US13630231

    申请日：2012-09-28

    Applicant: First Solar, Inc

    Inventor： Bastiaan Arie Korevaar ,  Faisal Razi Ahmad

    IPC: H01L21/00

    CPC classification number: H01L31/1828 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02474 ,  H01L21/02483 ,  H01L21/02505 ,  H01L21/02562 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/073 ,  Y02E10/541 ,  Y02E10/543

    Abstract: A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source into at least a portion of the semiconductor material; and (c) disposing a window layer on the semiconductor layer after the step (b).

    Abstract translation: 提出了一种处理半导体组件的方法。 该方法包括：（a）使半导体组件的至少一部分与硫属元素源接触，其中半导体组件包括半导体层，该半导体层包括设置在支撑体上的半导体材料; （b）将硫属元素从硫族元素源引入到半导体材料的至少一部分中; 和（c）在步骤（b）之后在半导体层上设置窗口层。

    Varying cadmium telluride growth temperature during deposition to increase solar cell reliability
    5.
    发明授权
    Varying cadmium telluride growth temperature during deposition to increase solar cell reliability 有权
    沉积期间碲化镉生长温度的变化提高了太阳能电池的可靠性

    公开(公告)号：US09324898B2

    公开(公告)日：2016-04-26

    申请号：US14036229

    申请日：2013-09-25

    Applicant: Alliance for Sustainable Energy, LLC ,  First Solar, Inc.

    Inventor： David S. Albin ,  James Neil Johnson ,  Yu Zhao ,  Bastiaan Arie Korevaar

    IPC: H01L21/00 ,  H01L31/073 ,  H01L21/02 ,  H01L31/0296 ,  H01L31/0368 ,  H01L31/18

    CPC classification number: H01L31/073 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02562 ,  H01L31/0296 ,  H01L31/0368 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/521

    Abstract: A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

    Abstract translation: 一种用于形成用于光伏模块或太阳能电池的碲化镉（CdTe）薄膜或层的方法。 该方法包括通过预先悬浮在CdTe源上的衬底（例如，具有硫化镉（CdS）异质结或层）的衬底）来在CdTe层的生长期间改变衬底温度以将水分除去至相对较低的预热温度。 然后，该方法包括仅直接加热CdTe源，CdTe源又间接加热沉积CdTe的衬底。 该方法提高了CdTe太阳能电池的可靠性。 所得到的微结构显示出不同的晶粒尺寸分布，使得初始区域由比沉积的CdTe的体区部分更小的晶粒组成。 所得到的器件表现出一种行为，表明在CdS异质结附近存在更多n型CdTe材料，而不是CdTe沉积期间衬底温度保持不变的生长。

    PHOTOVOLTAIC DEVICES AND METHOD OF MAKING
    7.
    发明申请
    PHOTOVOLTAIC DEVICES AND METHOD OF MAKING 审中-公开
    光伏器件及其制造方法

    公开(公告)号：US20140373917A1

    公开(公告)日：2014-12-25

    申请号：US14469133

    申请日：2014-08-26

    Applicant: First Solar, Inc.

    Inventor： Bastiaan Arie Korevaar ,  Renee Mary Whitney ,  Faisal Razi Ahmad

    IPC: H01L31/0236 ,  H01L31/18

    CPC classification number: H01L31/02363 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/03529 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.

    Abstract translation: 在本发明的一个方面，提供一种光电器件。 光伏器件包括透明层; 设置在所述透明层上的第一多孔层，其中所述第一多孔层包括延伸穿过所述第一多孔层的厚度的多个孔; 设置在所述多个孔中以形成图案化的第一半导体层的第一半导体材料; 以及设置在所述第一多孔层和所述图案化的第一半导体层上的第二半导体层，其中所述图案化的第一半导体层基本上是透明的。 还提供了制造光伏器件的方法。

    Back contact electrodes for cadmium telluride photovoltaic cells
    9.
    发明授权
    Back contact electrodes for cadmium telluride photovoltaic cells 有权
    碲化镉光伏电池的背接触电极

    公开(公告)号：US09054241B2

    公开(公告)日：2015-06-09

    申请号：US14015041

    申请日：2013-08-30

    Applicant: First Solar, Inc.

    Inventor： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Roman Shuba

    IPC: H01L31/102 ,  H01L31/0224 ,  H01L31/073 ,  H01L31/0296 ,  H01L33/00

    CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  H01L33/0083 ,  Y02E10/543

    Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

    Abstract translation: 提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。 该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料，使得活化的材料蚀刻半导体层的表面。 该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。

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